Peculiarities of Modeling the Frequency Dependences of Admittance of MIS Structure Based on Organic P3HT Film with an Insulator Al2O3 ... View Full Text


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Article Info

DATE

2019-03-27

AUTHORS

A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh

ABSTRACT

For the depletion and accumulation modes, equivalent circuits of MIS structure based on an organic P3HT thin film with an Al2O3 insulator are proposed. The frequency dependences of the capacitance and conductance of an organic MIS structure were simulated at a temperature of 300 K in the frequency range of 20 Hz – 2 MHz. It is shown that the measured values of the capacitance and conductance substantially depend on the thickness of the insulator layer, the thickness and specific conductance of the organic film, the parameters of surface traps, the frequency and bias voltage. Methods for determining the values of the basic elements of the equivalent circuit for the correct characterization of traps at the inorganic insulator – organic film interface are described. More... »

PAGES

2126-2134

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s11182-019-01646-7

DOI

http://dx.doi.org/10.1007/s11182-019-01646-7

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1113046387


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/19", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Studies in Creative Arts and Writing", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/1902", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Film, Television and Digital Media", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "V. D. Kuznetsov Siberian Physical Technical Institute at Tomsk State University, Tomsk, Russia", 
          "id": "http://www.grid.ac/institutes/grid.77602.34", 
          "name": [
            "National Research Tomsk State University, Tomsk, Russia", 
            "V. D. Kuznetsov Siberian Physical Technical Institute at Tomsk State University, Tomsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Voitsekhovskii", 
        "givenName": "A. V.", 
        "id": "sg:person.0633602363.74", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0633602363.74"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "National Research Tomsk State University, Tomsk, Russia", 
          "id": "http://www.grid.ac/institutes/grid.77602.34", 
          "name": [
            "National Research Tomsk State University, Tomsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Nesmelov", 
        "givenName": "S. N.", 
        "id": "sg:person.012026361575.81", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012026361575.81"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "National Research Tomsk State University, Tomsk, Russia", 
          "id": "http://www.grid.ac/institutes/grid.77602.34", 
          "name": [
            "National Research Tomsk State University, Tomsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Dzyadukh", 
        "givenName": "S. M.", 
        "id": "sg:person.013647642435.34", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013647642435.34"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1007/s11182-018-1294-9", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1101522658", 
          "https://doi.org/10.1007/s11182-018-1294-9"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/s11182-015-0422-z", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1000105150", 
          "https://doi.org/10.1007/s11182-015-0422-z"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/s11182-005-0174-2", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1032768006", 
          "https://doi.org/10.1007/s11182-005-0174-2"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/s10854-016-6011-2", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1035917001", 
          "https://doi.org/10.1007/s10854-016-6011-2"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/ncomms3775", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1003578063", 
          "https://doi.org/10.1038/ncomms3775"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2019-03-27", 
    "datePublishedReg": "2019-03-27", 
    "description": "For the depletion and accumulation modes, equivalent circuits of MIS structure based on an organic P3HT thin film with an Al2O3 insulator are proposed. The frequency dependences of the capacitance and conductance of an organic MIS structure were simulated at a temperature of 300 K in the frequency range of 20 Hz \u2013 2 MHz. It is shown that the measured values of the capacitance and conductance substantially depend on the thickness of the insulator layer, the thickness and specific conductance of the organic film, the parameters of surface traps, the frequency and bias voltage. Methods for determining the values of the basic elements of the equivalent circuit for the correct characterization of traps at the inorganic insulator \u2013 organic film interface are described.", 
    "genre": "article", 
    "id": "sg:pub.10.1007/s11182-019-01646-7", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1313824", 
        "issn": [
          "1064-8887", 
          "1573-9228"
        ], 
        "name": "Russian Physics Journal", 
        "publisher": "Springer Nature", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "11", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "61"
      }
    ], 
    "keywords": [
      "MIS structures", 
      "equivalent circuit", 
      "P3HT thin films", 
      "Al2O3 layer", 
      "insulator layer", 
      "MIS structure", 
      "Al2O3 insulator", 
      "frequency dependence", 
      "film interface", 
      "Hz\u20132 MHz", 
      "P3HT films", 
      "thin films", 
      "bias voltage", 
      "organic films", 
      "frequency range", 
      "surface traps", 
      "films", 
      "accumulation mode", 
      "capacitance", 
      "thickness", 
      "layer", 
      "circuit", 
      "voltage", 
      "structure", 
      "insulator", 
      "MHz", 
      "interface", 
      "temperature", 
      "correct characterization", 
      "dependence", 
      "admittance", 
      "basic elements", 
      "mode", 
      "parameters", 
      "traps", 
      "values", 
      "range", 
      "specific conductance", 
      "characterization", 
      "conductance", 
      "method", 
      "frequency", 
      "elements", 
      "peculiarities", 
      "depletion", 
      "organic P3HT thin film", 
      "organic MIS structure", 
      "inorganic insulator \u2013 organic film interface", 
      "insulator \u2013 organic film interface", 
      "Organic P3HT Film", 
      "Insulator Al2O3 Layer"
    ], 
    "name": "Peculiarities of Modeling the Frequency Dependences of Admittance of MIS Structure Based on Organic P3HT Film with an Insulator Al2O3 Layer", 
    "pagination": "2126-2134", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1113046387"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1007/s11182-019-01646-7"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1007/s11182-019-01646-7", 
      "https://app.dimensions.ai/details/publication/pub.1113046387"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2021-12-01T19:44", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20211201/entities/gbq_results/article/article_802.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1007/s11182-019-01646-7"
  }
]
 

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This table displays all metadata directly associated to this object as RDF triples.

145 TRIPLES      22 PREDICATES      81 URIs      68 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1007/s11182-019-01646-7 schema:about anzsrc-for:19
2 anzsrc-for:1902
3 schema:author N175dd6831d83487c99818aca44d5dd18
4 schema:citation sg:pub.10.1007/s10854-016-6011-2
5 sg:pub.10.1007/s11182-005-0174-2
6 sg:pub.10.1007/s11182-015-0422-z
7 sg:pub.10.1007/s11182-018-1294-9
8 sg:pub.10.1038/ncomms3775
9 schema:datePublished 2019-03-27
10 schema:datePublishedReg 2019-03-27
11 schema:description For the depletion and accumulation modes, equivalent circuits of MIS structure based on an organic P3HT thin film with an Al2O3 insulator are proposed. The frequency dependences of the capacitance and conductance of an organic MIS structure were simulated at a temperature of 300 K in the frequency range of 20 Hz – 2 MHz. It is shown that the measured values of the capacitance and conductance substantially depend on the thickness of the insulator layer, the thickness and specific conductance of the organic film, the parameters of surface traps, the frequency and bias voltage. Methods for determining the values of the basic elements of the equivalent circuit for the correct characterization of traps at the inorganic insulator – organic film interface are described.
12 schema:genre article
13 schema:inLanguage en
14 schema:isAccessibleForFree false
15 schema:isPartOf N0013fec79a1f44f7a80e1c9e81d36552
16 N3d9b008638644c38b83ee2fabbb7d247
17 sg:journal.1313824
18 schema:keywords Al2O3 insulator
19 Al2O3 layer
20 Hz–2 MHz
21 Insulator Al2O3 Layer
22 MHz
23 MIS structure
24 MIS structures
25 Organic P3HT Film
26 P3HT films
27 P3HT thin films
28 accumulation mode
29 admittance
30 basic elements
31 bias voltage
32 capacitance
33 characterization
34 circuit
35 conductance
36 correct characterization
37 dependence
38 depletion
39 elements
40 equivalent circuit
41 film interface
42 films
43 frequency
44 frequency dependence
45 frequency range
46 inorganic insulator – organic film interface
47 insulator
48 insulator layer
49 insulator – organic film interface
50 interface
51 layer
52 method
53 mode
54 organic MIS structure
55 organic P3HT thin film
56 organic films
57 parameters
58 peculiarities
59 range
60 specific conductance
61 structure
62 surface traps
63 temperature
64 thickness
65 thin films
66 traps
67 values
68 voltage
69 schema:name Peculiarities of Modeling the Frequency Dependences of Admittance of MIS Structure Based on Organic P3HT Film with an Insulator Al2O3 Layer
70 schema:pagination 2126-2134
71 schema:productId Nc4b497626984426ba07511ae9916fa9a
72 Nc6a78848b91648febf34252c170b2413
73 schema:sameAs https://app.dimensions.ai/details/publication/pub.1113046387
74 https://doi.org/10.1007/s11182-019-01646-7
75 schema:sdDatePublished 2021-12-01T19:44
76 schema:sdLicense https://scigraph.springernature.com/explorer/license/
77 schema:sdPublisher N74e1cdf51999482f9d75711b1a1d2e53
78 schema:url https://doi.org/10.1007/s11182-019-01646-7
79 sgo:license sg:explorer/license/
80 sgo:sdDataset articles
81 rdf:type schema:ScholarlyArticle
82 N0013fec79a1f44f7a80e1c9e81d36552 schema:volumeNumber 61
83 rdf:type schema:PublicationVolume
84 N175dd6831d83487c99818aca44d5dd18 rdf:first sg:person.0633602363.74
85 rdf:rest N2c6fe14d25a44f96b1b50dfbf4be6554
86 N2c6fe14d25a44f96b1b50dfbf4be6554 rdf:first sg:person.012026361575.81
87 rdf:rest N940f0a5a3ef4474d8ebfc6ba9c36a988
88 N3d9b008638644c38b83ee2fabbb7d247 schema:issueNumber 11
89 rdf:type schema:PublicationIssue
90 N74e1cdf51999482f9d75711b1a1d2e53 schema:name Springer Nature - SN SciGraph project
91 rdf:type schema:Organization
92 N940f0a5a3ef4474d8ebfc6ba9c36a988 rdf:first sg:person.013647642435.34
93 rdf:rest rdf:nil
94 Nc4b497626984426ba07511ae9916fa9a schema:name doi
95 schema:value 10.1007/s11182-019-01646-7
96 rdf:type schema:PropertyValue
97 Nc6a78848b91648febf34252c170b2413 schema:name dimensions_id
98 schema:value pub.1113046387
99 rdf:type schema:PropertyValue
100 anzsrc-for:19 schema:inDefinedTermSet anzsrc-for:
101 schema:name Studies in Creative Arts and Writing
102 rdf:type schema:DefinedTerm
103 anzsrc-for:1902 schema:inDefinedTermSet anzsrc-for:
104 schema:name Film, Television and Digital Media
105 rdf:type schema:DefinedTerm
106 sg:journal.1313824 schema:issn 1064-8887
107 1573-9228
108 schema:name Russian Physics Journal
109 schema:publisher Springer Nature
110 rdf:type schema:Periodical
111 sg:person.012026361575.81 schema:affiliation grid-institutes:grid.77602.34
112 schema:familyName Nesmelov
113 schema:givenName S. N.
114 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012026361575.81
115 rdf:type schema:Person
116 sg:person.013647642435.34 schema:affiliation grid-institutes:grid.77602.34
117 schema:familyName Dzyadukh
118 schema:givenName S. M.
119 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013647642435.34
120 rdf:type schema:Person
121 sg:person.0633602363.74 schema:affiliation grid-institutes:grid.77602.34
122 schema:familyName Voitsekhovskii
123 schema:givenName A. V.
124 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0633602363.74
125 rdf:type schema:Person
126 sg:pub.10.1007/s10854-016-6011-2 schema:sameAs https://app.dimensions.ai/details/publication/pub.1035917001
127 https://doi.org/10.1007/s10854-016-6011-2
128 rdf:type schema:CreativeWork
129 sg:pub.10.1007/s11182-005-0174-2 schema:sameAs https://app.dimensions.ai/details/publication/pub.1032768006
130 https://doi.org/10.1007/s11182-005-0174-2
131 rdf:type schema:CreativeWork
132 sg:pub.10.1007/s11182-015-0422-z schema:sameAs https://app.dimensions.ai/details/publication/pub.1000105150
133 https://doi.org/10.1007/s11182-015-0422-z
134 rdf:type schema:CreativeWork
135 sg:pub.10.1007/s11182-018-1294-9 schema:sameAs https://app.dimensions.ai/details/publication/pub.1101522658
136 https://doi.org/10.1007/s11182-018-1294-9
137 rdf:type schema:CreativeWork
138 sg:pub.10.1038/ncomms3775 schema:sameAs https://app.dimensions.ai/details/publication/pub.1003578063
139 https://doi.org/10.1038/ncomms3775
140 rdf:type schema:CreativeWork
141 grid-institutes:grid.77602.34 schema:alternateName National Research Tomsk State University, Tomsk, Russia
142 V. D. Kuznetsov Siberian Physical Technical Institute at Tomsk State University, Tomsk, Russia
143 schema:name National Research Tomsk State University, Tomsk, Russia
144 V. D. Kuznetsov Siberian Physical Technical Institute at Tomsk State University, Tomsk, Russia
145 rdf:type schema:Organization
 




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