Defects in Arsenic Implanted р+–n- and n+–p- Structures Based on MBE Grown CdHgTe Films View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2018-02-08

AUTHORS

I. I. Izhnin, E. I. Fitsych, A. V. Voitsekhovskii, A. G. Korotaev, K. D. Mynbaev, V. S. Varavin, S. A. Dvoretsky, N. N. Mikhailov, M. V. Yakushev, A. Yu. Bonchyk, H. V. Savytskyy, Z. Świątek

ABSTRACT

Complex studies of the defect structure of arsenic-implanted (with the energy of 190 keV) CdxHg1–xTe (x = 0.22) films grown by molecular-beam epitaxy are carried out. The investigations were performed using secondary-ion mass spectroscopy, transmission electron microscopy, optical reflection in the visible region of the spectrum, and electrical measurements. Radiation donor defects were studied in n+–p- and n+–n-structures obtained by implantation and formed on the basis of p-type and n-type materials, respectively, without activation annealing. It is shown that in the layer of the distribution of implanted ions, a layer of large extended defects with low density is formed in the near-surface region followed by a layer of smaller extended defects with larger density. A different character of accumulation of electrically active donor defects in the films with and without a protective graded-gap surface layer has been revealed. It is demonstrated that p+–n- structures are formed on the basis of n-type material upon activation of arsenic in the process of postimplantation thermal annealing with 100% activation of impurity and complete annihilation of radiation donor defects. More... »

PAGES

1752-1757

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s11182-018-1278-9

DOI

http://dx.doi.org/10.1007/s11182-018-1278-9

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1100894372


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