Ontology type: schema:ScholarlyArticle
2017-05-31
AUTHORSA. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh, V. S. Varavin, V. V. Vasil’ev, S. A. Dvoretskii, N. N. Mikhailov, M. V. Yakushev, G. Yu. Sidorov
ABSTRACTIn a temperature range of 9–200 K, temperature dependences of the differential resistance of space-charge region in the strong inversion mode are experimentally studied for MIS structures based on CdxHg1–xTe (x = 0.22–0.40) grown by molecular-beam epitaxy. The effect of various parameters of structures: the working layer composition, the type of a substrate, the type of insulator coating, and the presence of a near-surface graded-gap layer on the value of the product of differential resistance by the area is studied. It is shown that the values of the product RSCRA for MIS structures based on n-CdHgTe grown on a Si(013) substrate are smaller than those for structures based on the material grown on a GaAs(013) substrate. The values of the product RSCRA for MIS structures based on p-CdHgTe grown on a Si(013) substrate are comparable with the value of the analogous parameter for MIS structures based on p-CdHgTe grown on a GaAs(013) substrate. More... »
PAGES360-370
http://scigraph.springernature.com/pub.10.1007/s11182-017-1083-x
DOIhttp://dx.doi.org/10.1007/s11182-017-1083-x
DIMENSIONShttps://app.dimensions.ai/details/publication/pub.1085731024
JSON-LD is the canonical representation for SciGraph data.
TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT
[
{
"@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json",
"about": [
{
"id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09",
"inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/",
"name": "Engineering",
"type": "DefinedTerm"
},
{
"id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912",
"inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/",
"name": "Materials Engineering",
"type": "DefinedTerm"
}
],
"author": [
{
"affiliation": {
"alternateName": "V. D. Kuznetsov Siberian Physical-Technical Institute at Tomsk State University, Tomsk, Russia",
"id": "http://www.grid.ac/institutes/grid.77602.34",
"name": [
"National Research Tomsk State University, Tomsk, Russia",
"V. D. Kuznetsov Siberian Physical-Technical Institute at Tomsk State University, Tomsk, Russia"
],
"type": "Organization"
},
"familyName": "Voitsekhovskii",
"givenName": "A. V.",
"id": "sg:person.015331371645.55",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015331371645.55"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "V. D. Kuznetsov Siberian Physical-Technical Institute at Tomsk State University, Tomsk, Russia",
"id": "http://www.grid.ac/institutes/grid.77602.34",
"name": [
"National Research Tomsk State University, Tomsk, Russia",
"V. D. Kuznetsov Siberian Physical-Technical Institute at Tomsk State University, Tomsk, Russia"
],
"type": "Organization"
},
"familyName": "Nesmelov",
"givenName": "S. N.",
"id": "sg:person.012026361575.81",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012026361575.81"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "V. D. Kuznetsov Siberian Physical-Technical Institute at Tomsk State University, Tomsk, Russia",
"id": "http://www.grid.ac/institutes/grid.77602.34",
"name": [
"National Research Tomsk State University, Tomsk, Russia",
"V. D. Kuznetsov Siberian Physical-Technical Institute at Tomsk State University, Tomsk, Russia"
],
"type": "Organization"
},
"familyName": "Dzyadukh",
"givenName": "S. M.",
"id": "sg:person.013647642435.34",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013647642435.34"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "A. V. Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia",
"id": "http://www.grid.ac/institutes/grid.450314.7",
"name": [
"A. V. Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia"
],
"type": "Organization"
},
"familyName": "Varavin",
"givenName": "V. S.",
"id": "sg:person.014252706507.90",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014252706507.90"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "A. V. Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia",
"id": "http://www.grid.ac/institutes/grid.450314.7",
"name": [
"A. V. Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia"
],
"type": "Organization"
},
"familyName": "Vasil\u2019ev",
"givenName": "V. V.",
"id": "sg:person.012124737142.31",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012124737142.31"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "A. V. Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia",
"id": "http://www.grid.ac/institutes/grid.450314.7",
"name": [
"National Research Tomsk State University, Tomsk, Russia",
"A. V. Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia"
],
"type": "Organization"
},
"familyName": "Dvoretskii",
"givenName": "S. A.",
"id": "sg:person.013421763553.82",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013421763553.82"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "A. V. Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia",
"id": "http://www.grid.ac/institutes/grid.450314.7",
"name": [
"A. V. Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia"
],
"type": "Organization"
},
"familyName": "Mikhailov",
"givenName": "N. N.",
"id": "sg:person.011775522057.45",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011775522057.45"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "A. V. Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia",
"id": "http://www.grid.ac/institutes/grid.450314.7",
"name": [
"A. V. Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia"
],
"type": "Organization"
},
"familyName": "Yakushev",
"givenName": "M. V.",
"id": "sg:person.012212531345.29",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012212531345.29"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "A. V. Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia",
"id": "http://www.grid.ac/institutes/grid.450314.7",
"name": [
"A. V. Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia"
],
"type": "Organization"
},
"familyName": "Sidorov",
"givenName": "G. Yu.",
"id": "sg:person.010223532572.08",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010223532572.08"
],
"type": "Person"
}
],
"citation": [
{
"id": "sg:pub.10.1007/s11182-014-0272-0",
"sameAs": [
"https://app.dimensions.ai/details/publication/pub.1047560418",
"https://doi.org/10.1007/s11182-014-0272-0"
],
"type": "CreativeWork"
},
{
"id": "sg:pub.10.1007/s11664-015-3717-5",
"sameAs": [
"https://app.dimensions.ai/details/publication/pub.1039729430",
"https://doi.org/10.1007/s11664-015-3717-5"
],
"type": "CreativeWork"
},
{
"id": "sg:pub.10.1007/s11664-016-4686-z",
"sameAs": [
"https://app.dimensions.ai/details/publication/pub.1022101771",
"https://doi.org/10.1007/s11664-016-4686-z"
],
"type": "CreativeWork"
},
{
"id": "sg:pub.10.1007/s11182-010-9332-2",
"sameAs": [
"https://app.dimensions.ai/details/publication/pub.1045650278",
"https://doi.org/10.1007/s11182-010-9332-2"
],
"type": "CreativeWork"
}
],
"datePublished": "2017-05-31",
"datePublishedReg": "2017-05-31",
"description": "In a temperature range of 9\u2013200 K, temperature dependences of the differential resistance of space-charge region in the strong inversion mode are experimentally studied for MIS structures based on CdxHg1\u2013xTe (x = 0.22\u20130.40) grown by molecular-beam epitaxy. The effect of various parameters of structures: the working layer composition, the type of a substrate, the type of insulator coating, and the presence of a near-surface graded-gap layer on the value of the product of differential resistance by the area is studied. It is shown that the values of the product RSCRA for MIS structures based on n-CdHgTe grown on a Si(013) substrate are smaller than those for structures based on the material grown on a GaAs(013) substrate. The values of the product RSCRA for MIS structures based on p-CdHgTe grown on a Si(013) substrate are comparable with the value of the analogous parameter for MIS structures based on p-CdHgTe grown on a GaAs(013) substrate.",
"genre": "article",
"id": "sg:pub.10.1007/s11182-017-1083-x",
"inLanguage": "en",
"isAccessibleForFree": false,
"isPartOf": [
{
"id": "sg:journal.1313824",
"issn": [
"1064-8887",
"1573-9228"
],
"name": "Russian Physics Journal",
"publisher": "Springer Nature",
"type": "Periodical"
},
{
"issueNumber": "2",
"type": "PublicationIssue"
},
{
"type": "PublicationVolume",
"volumeNumber": "60"
}
],
"keywords": [
"MIS structures",
"near-surface graded-gap layer",
"graded-gap layer",
"MIS Structures Based",
"strong inversion mode",
"space charge region",
"differential resistance",
"molecular beam epitaxy",
"insulator coatings",
"parameters of structure",
"GaAs substrates",
"alternative Si",
"layer composition",
"inversion mode",
"temperature range",
"CdxHg1-xTe",
"temperature dependence",
"molecularbeam epitaxy",
"epitaxy",
"CdHgTe",
"substrate",
"coatings",
"Si",
"CdxHg1",
"structure",
"resistance",
"parameters",
"layer",
"materials",
"dependence",
"Based",
"mode",
"values",
"products",
"range",
"analogous parameters",
"area",
"composition",
"types",
"effect",
"region",
"presence"
],
"name": "Temperature Dependences of the Product of the Differential Resistance by the Area in MIS-Structures Based on CdxHg1\u2013xTe Grown by Molecularbeam Epitaxy on Alternative Si and GaAs Substrates",
"pagination": "360-370",
"productId": [
{
"name": "dimensions_id",
"type": "PropertyValue",
"value": [
"pub.1085731024"
]
},
{
"name": "doi",
"type": "PropertyValue",
"value": [
"10.1007/s11182-017-1083-x"
]
}
],
"sameAs": [
"https://doi.org/10.1007/s11182-017-1083-x",
"https://app.dimensions.ai/details/publication/pub.1085731024"
],
"sdDataset": "articles",
"sdDatePublished": "2022-05-20T07:33",
"sdLicense": "https://scigraph.springernature.com/explorer/license/",
"sdPublisher": {
"name": "Springer Nature - SN SciGraph project",
"type": "Organization"
},
"sdSource": "s3://com-springernature-scigraph/baseset/20220519/entities/gbq_results/article/article_745.jsonl",
"type": "ScholarlyArticle",
"url": "https://doi.org/10.1007/s11182-017-1083-x"
}
]Download the RDF metadata as: json-ld nt turtle xml License info
JSON-LD is a popular format for linked data which is fully compatible with JSON.
curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1007/s11182-017-1083-x'
N-Triples is a line-based linked data format ideal for batch operations.
curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1007/s11182-017-1083-x'
Turtle is a human-readable linked data format.
curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1007/s11182-017-1083-x'
RDF/XML is a standard XML format for linked data.
curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1007/s11182-017-1083-x'
This table displays all metadata directly associated to this object as RDF triples.
177 TRIPLES
22 PREDICATES
71 URIs
59 LITERALS
6 BLANK NODES