The influence of anodic oxide on the electron concentration in n-GaAs View Full Text


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Article Info

DATE

2014-01-12

AUTHORS

V. M. Kalygina, V. V. Vishnikina, А. N. Zarubin, Yu. S. Petrova, М. S. Skakunov, О. P. Тоlbanov, А. V. Тyazhev, Т. М. Yaskevich

ABSTRACT

The influence of anodic oxide on the electron concentration near the Ga2O3–n-GaAs interface is studied. The coordinate distribution of electrons is obtained as a function of anodizing voltage, duration of treatment of oxide films in oxygen plasma, temperature, and annealing time. A decrease in the electron concentration in a semiconductor after deposition of anodic oxide is accounted for by the appearance of Ga vacancies which act as acceptors in gallium arsenide. More... »

PAGES

984-989

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s11182-014-0129-6

DOI

http://dx.doi.org/10.1007/s11182-014-0129-6

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1034873319


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