The photoelectrical properties of MIS structures based on heteroepitaxial n-Hg1–xCdxTe (x = 0.21–0.23) View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2013-01-13

AUTHORS

A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh, V. V. Vasil’ev, V. S. Varavin, S. A. Dvoretskii, N. N. Mikhailov, Yu. G. Sidorov, M. V. Yakushev

ABSTRACT

The dependences of photo-emf of metal-insular-semiconductor structures based on n-Hg1–xCdxTe (x = 0.21–0.23) on bias voltage, frequency, and temperature are experimentally studied. The photoelectrical characteristics of the metal-insulator-semiconductor structures based on epitaxial n-Hg1–xCdxTe (x = 0.21–0.23), including those taking into account the presence of near-surface graded-gap layers having an increased content of CdTe at various temperatures are calculated. The calculated dependences are compared with experiment and it is shown that the differential resistance of the spatial charge region for the metal-insulatorsemiconductor structures based on n-Hg1–xCdxTe (x = 0.21–0.23) without a graded-gap layer is restricted by tunneling through deep levels, whereas the differential resistance of the same structures with graded-gap layers – by the charge-carrier diffusion. More... »

PAGES

917-924

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s11182-013-9901-2

DOI

http://dx.doi.org/10.1007/s11182-013-9901-2

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1018554099


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