Electrophysical characteristics of MIS structures based on graded band-gap MBE HgCdTe with grown in situ CdTe as a dielectric View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2010-07-17

AUTHORS

A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh, V. S. Varavin, S. A. Dvoretskii, N. N. Mikhailov, Yu. G. Sidorov, V. V. Vasil’ev, M. V. Yakushev

ABSTRACT

Capacitance-voltage characteristics of MIS structures based on graded band-gap heteroepitaxial HgCdTe (x = 0.22–0.23 and 0.32–0.36) with grown in situ CdTe as a passivating coating are examined. The average surface-state densities as well as mobile- and fixed-charge densities are determined for the HgCdTe/CdTe, HgCdTe/CdTe–SiO2–Si3N4, and HgCdTe/CdTe–ZnTe systems. It is shown that grown in situ CdTe forms a fairly qualitative interface, and deposition of additional SiO2–Si3N4 and ZnTe layers makes it possible to control the electric strength and charges in the dielectric used. More... »

PAGES

148-154

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s11182-010-9399-9

DOI

http://dx.doi.org/10.1007/s11182-010-9399-9

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1036387989


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "V. D. Kuznetsov Siberian Physical-Technical Institute of Tomsk State University, Tomsk, Russia", 
          "id": "http://www.grid.ac/institutes/grid.77602.34", 
          "name": [
            "V. D. Kuznetsov Siberian Physical-Technical Institute of Tomsk State University, Tomsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Voitsekhovskii", 
        "givenName": "A. V.", 
        "id": "sg:person.015331371645.55", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015331371645.55"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "V. D. Kuznetsov Siberian Physical-Technical Institute of Tomsk State University, Tomsk, Russia", 
          "id": "http://www.grid.ac/institutes/grid.77602.34", 
          "name": [
            "V. D. Kuznetsov Siberian Physical-Technical Institute of Tomsk State University, Tomsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Nesmelov", 
        "givenName": "S. N.", 
        "id": "sg:person.012026361575.81", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012026361575.81"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "V. D. Kuznetsov Siberian Physical-Technical Institute of Tomsk State University, Tomsk, Russia", 
          "id": "http://www.grid.ac/institutes/grid.77602.34", 
          "name": [
            "V. D. Kuznetsov Siberian Physical-Technical Institute of Tomsk State University, Tomsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Dzyadukh", 
        "givenName": "S. M.", 
        "id": "sg:person.013647642435.34", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013647642435.34"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia", 
          "id": "http://www.grid.ac/institutes/grid.450314.7", 
          "name": [
            "Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Varavin", 
        "givenName": "V. S.", 
        "id": "sg:person.016310251657.72", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016310251657.72"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia", 
          "id": "http://www.grid.ac/institutes/grid.450314.7", 
          "name": [
            "Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Dvoretskii", 
        "givenName": "S. A.", 
        "id": "sg:person.013421763553.82", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013421763553.82"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia", 
          "id": "http://www.grid.ac/institutes/grid.450314.7", 
          "name": [
            "Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Mikhailov", 
        "givenName": "N. N.", 
        "id": "sg:person.011775522057.45", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011775522057.45"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia", 
          "id": "http://www.grid.ac/institutes/grid.450314.7", 
          "name": [
            "Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Sidorov", 
        "givenName": "Yu. G.", 
        "id": "sg:person.016143266225.90", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016143266225.90"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia", 
          "id": "http://www.grid.ac/institutes/grid.450314.7", 
          "name": [
            "Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Vasil\u2019ev", 
        "givenName": "V. V.", 
        "id": "sg:person.012124737142.31", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012124737142.31"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia", 
          "id": "http://www.grid.ac/institutes/grid.450314.7", 
          "name": [
            "Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Yakushev", 
        "givenName": "M. V.", 
        "id": "sg:person.012212531345.29", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012212531345.29"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1007/s11664-002-0219-z", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1036738104", 
          "https://doi.org/10.1007/s11664-002-0219-z"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/s11182-005-0174-2", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1032768006", 
          "https://doi.org/10.1007/s11182-005-0174-2"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2010-07-17", 
    "datePublishedReg": "2010-07-17", 
    "description": "Capacitance-voltage characteristics of MIS structures based on graded band-gap heteroepitaxial HgCdTe (x = 0.22\u20130.23 and 0.32\u20130.36) with grown in situ CdTe as a passivating coating are examined. The average surface-state densities as well as mobile- and fixed-charge densities are determined for the HgCdTe/CdTe, HgCdTe/CdTe\u2013SiO2\u2013Si3N4, and HgCdTe/CdTe\u2013ZnTe systems. It is shown that grown in situ CdTe forms a fairly qualitative interface, and deposition of additional SiO2\u2013Si3N4 and ZnTe layers makes it possible to control the electric strength and charges in the dielectric used.", 
    "genre": "article", 
    "id": "sg:pub.10.1007/s11182-010-9399-9", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1313824", 
        "issn": [
          "1064-8887", 
          "1573-9228"
        ], 
        "name": "Russian Physics Journal", 
        "publisher": "Springer Nature", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "2", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "53"
      }
    ], 
    "keywords": [
      "MIS structures", 
      "HgCdTe/CdTe", 
      "capacitance-voltage characteristics", 
      "surface state density", 
      "fixed-charge density", 
      "MBE HgCdTe", 
      "electric strength", 
      "SiO2\u2013Si3N4", 
      "electrophysical characteristics", 
      "ZnTe layers", 
      "qualitative interface", 
      "HgCdTe", 
      "passivating coating", 
      "CdTe", 
      "dielectric", 
      "Si3N4", 
      "coatings", 
      "density", 
      "layer", 
      "interface", 
      "strength", 
      "characteristics", 
      "structure", 
      "deposition", 
      "charge", 
      "system", 
      "mobile"
    ], 
    "name": "Electrophysical characteristics of MIS structures based on graded band-gap MBE HgCdTe with grown in situ CdTe as a dielectric", 
    "pagination": "148-154", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1036387989"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1007/s11182-010-9399-9"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1007/s11182-010-9399-9", 
      "https://app.dimensions.ai/details/publication/pub.1036387989"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-05-20T07:26", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220519/entities/gbq_results/article/article_516.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1007/s11182-010-9399-9"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1007/s11182-010-9399-9'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1007/s11182-010-9399-9'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1007/s11182-010-9399-9'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1007/s11182-010-9399-9'


 

This table displays all metadata directly associated to this object as RDF triples.

152 TRIPLES      22 PREDICATES      54 URIs      44 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1007/s11182-010-9399-9 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author N268576fc1072420694c7a3af15096d2d
4 schema:citation sg:pub.10.1007/s11182-005-0174-2
5 sg:pub.10.1007/s11664-002-0219-z
6 schema:datePublished 2010-07-17
7 schema:datePublishedReg 2010-07-17
8 schema:description Capacitance-voltage characteristics of MIS structures based on graded band-gap heteroepitaxial HgCdTe (x = 0.22–0.23 and 0.32–0.36) with grown in situ CdTe as a passivating coating are examined. The average surface-state densities as well as mobile- and fixed-charge densities are determined for the HgCdTe/CdTe, HgCdTe/CdTe–SiO2–Si3N4, and HgCdTe/CdTe–ZnTe systems. It is shown that grown in situ CdTe forms a fairly qualitative interface, and deposition of additional SiO2–Si3N4 and ZnTe layers makes it possible to control the electric strength and charges in the dielectric used.
9 schema:genre article
10 schema:inLanguage en
11 schema:isAccessibleForFree false
12 schema:isPartOf N8a41e98faec941c3a41fe39f7a7caa1c
13 Nb0aeaaf81a8549a6878c6be0a3d7fc55
14 sg:journal.1313824
15 schema:keywords CdTe
16 HgCdTe
17 HgCdTe/CdTe
18 MBE HgCdTe
19 MIS structures
20 Si3N4
21 SiO2–Si3N4
22 ZnTe layers
23 capacitance-voltage characteristics
24 characteristics
25 charge
26 coatings
27 density
28 deposition
29 dielectric
30 electric strength
31 electrophysical characteristics
32 fixed-charge density
33 interface
34 layer
35 mobile
36 passivating coating
37 qualitative interface
38 strength
39 structure
40 surface state density
41 system
42 schema:name Electrophysical characteristics of MIS structures based on graded band-gap MBE HgCdTe with grown in situ CdTe as a dielectric
43 schema:pagination 148-154
44 schema:productId N79df96d709134b2a864c77e69d88d017
45 Ne234316755914d7fb4acd827d6eef7ea
46 schema:sameAs https://app.dimensions.ai/details/publication/pub.1036387989
47 https://doi.org/10.1007/s11182-010-9399-9
48 schema:sdDatePublished 2022-05-20T07:26
49 schema:sdLicense https://scigraph.springernature.com/explorer/license/
50 schema:sdPublisher Na97c911184004a1d9e483c2e64894213
51 schema:url https://doi.org/10.1007/s11182-010-9399-9
52 sgo:license sg:explorer/license/
53 sgo:sdDataset articles
54 rdf:type schema:ScholarlyArticle
55 N0e5aa9f83d6c4ddab1bfa9d777476aba rdf:first sg:person.013647642435.34
56 rdf:rest N0fc34e115df74713be1dddc52adc0b3c
57 N0fc34e115df74713be1dddc52adc0b3c rdf:first sg:person.016310251657.72
58 rdf:rest Nf3fdd5b504784bf3a195ad966164705e
59 N1d07c447050c44d3bd13487db9cbb895 rdf:first sg:person.012212531345.29
60 rdf:rest rdf:nil
61 N268576fc1072420694c7a3af15096d2d rdf:first sg:person.015331371645.55
62 rdf:rest N6cc41dd05b2c4f7185cb663a56d63d06
63 N6cc41dd05b2c4f7185cb663a56d63d06 rdf:first sg:person.012026361575.81
64 rdf:rest N0e5aa9f83d6c4ddab1bfa9d777476aba
65 N79df96d709134b2a864c77e69d88d017 schema:name dimensions_id
66 schema:value pub.1036387989
67 rdf:type schema:PropertyValue
68 N80ec84f148044fc1be5c3fb0bdfcf599 rdf:first sg:person.011775522057.45
69 rdf:rest N84726dc8f4514913b36f7383114d336a
70 N84726dc8f4514913b36f7383114d336a rdf:first sg:person.016143266225.90
71 rdf:rest Ne389babfa8914c7b8374dbad52acdc9e
72 N8a41e98faec941c3a41fe39f7a7caa1c schema:issueNumber 2
73 rdf:type schema:PublicationIssue
74 Na97c911184004a1d9e483c2e64894213 schema:name Springer Nature - SN SciGraph project
75 rdf:type schema:Organization
76 Nb0aeaaf81a8549a6878c6be0a3d7fc55 schema:volumeNumber 53
77 rdf:type schema:PublicationVolume
78 Ne234316755914d7fb4acd827d6eef7ea schema:name doi
79 schema:value 10.1007/s11182-010-9399-9
80 rdf:type schema:PropertyValue
81 Ne389babfa8914c7b8374dbad52acdc9e rdf:first sg:person.012124737142.31
82 rdf:rest N1d07c447050c44d3bd13487db9cbb895
83 Nf3fdd5b504784bf3a195ad966164705e rdf:first sg:person.013421763553.82
84 rdf:rest N80ec84f148044fc1be5c3fb0bdfcf599
85 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
86 schema:name Engineering
87 rdf:type schema:DefinedTerm
88 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
89 schema:name Materials Engineering
90 rdf:type schema:DefinedTerm
91 sg:journal.1313824 schema:issn 1064-8887
92 1573-9228
93 schema:name Russian Physics Journal
94 schema:publisher Springer Nature
95 rdf:type schema:Periodical
96 sg:person.011775522057.45 schema:affiliation grid-institutes:grid.450314.7
97 schema:familyName Mikhailov
98 schema:givenName N. N.
99 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011775522057.45
100 rdf:type schema:Person
101 sg:person.012026361575.81 schema:affiliation grid-institutes:grid.77602.34
102 schema:familyName Nesmelov
103 schema:givenName S. N.
104 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012026361575.81
105 rdf:type schema:Person
106 sg:person.012124737142.31 schema:affiliation grid-institutes:grid.450314.7
107 schema:familyName Vasil’ev
108 schema:givenName V. V.
109 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012124737142.31
110 rdf:type schema:Person
111 sg:person.012212531345.29 schema:affiliation grid-institutes:grid.450314.7
112 schema:familyName Yakushev
113 schema:givenName M. V.
114 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012212531345.29
115 rdf:type schema:Person
116 sg:person.013421763553.82 schema:affiliation grid-institutes:grid.450314.7
117 schema:familyName Dvoretskii
118 schema:givenName S. A.
119 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013421763553.82
120 rdf:type schema:Person
121 sg:person.013647642435.34 schema:affiliation grid-institutes:grid.77602.34
122 schema:familyName Dzyadukh
123 schema:givenName S. M.
124 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013647642435.34
125 rdf:type schema:Person
126 sg:person.015331371645.55 schema:affiliation grid-institutes:grid.77602.34
127 schema:familyName Voitsekhovskii
128 schema:givenName A. V.
129 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015331371645.55
130 rdf:type schema:Person
131 sg:person.016143266225.90 schema:affiliation grid-institutes:grid.450314.7
132 schema:familyName Sidorov
133 schema:givenName Yu. G.
134 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016143266225.90
135 rdf:type schema:Person
136 sg:person.016310251657.72 schema:affiliation grid-institutes:grid.450314.7
137 schema:familyName Varavin
138 schema:givenName V. S.
139 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016310251657.72
140 rdf:type schema:Person
141 sg:pub.10.1007/s11182-005-0174-2 schema:sameAs https://app.dimensions.ai/details/publication/pub.1032768006
142 https://doi.org/10.1007/s11182-005-0174-2
143 rdf:type schema:CreativeWork
144 sg:pub.10.1007/s11664-002-0219-z schema:sameAs https://app.dimensions.ai/details/publication/pub.1036738104
145 https://doi.org/10.1007/s11664-002-0219-z
146 rdf:type schema:CreativeWork
147 grid-institutes:grid.450314.7 schema:alternateName Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia
148 schema:name Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia
149 rdf:type schema:Organization
150 grid-institutes:grid.77602.34 schema:alternateName V. D. Kuznetsov Siberian Physical-Technical Institute of Tomsk State University, Tomsk, Russia
151 schema:name V. D. Kuznetsov Siberian Physical-Technical Institute of Tomsk State University, Tomsk, Russia
152 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...