Ontology type: schema:ScholarlyArticle
2010-07-17
AUTHORSA. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh, V. S. Varavin, S. A. Dvoretskii, N. N. Mikhailov, Yu. G. Sidorov, V. V. Vasil’ev, M. V. Yakushev
ABSTRACTCapacitance-voltage characteristics of MIS structures based on graded band-gap heteroepitaxial HgCdTe (x = 0.22–0.23 and 0.32–0.36) with grown in situ CdTe as a passivating coating are examined. The average surface-state densities as well as mobile- and fixed-charge densities are determined for the HgCdTe/CdTe, HgCdTe/CdTe–SiO2–Si3N4, and HgCdTe/CdTe–ZnTe systems. It is shown that grown in situ CdTe forms a fairly qualitative interface, and deposition of additional SiO2–Si3N4 and ZnTe layers makes it possible to control the electric strength and charges in the dielectric used. More... »
PAGES148-154
http://scigraph.springernature.com/pub.10.1007/s11182-010-9399-9
DOIhttp://dx.doi.org/10.1007/s11182-010-9399-9
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