Photoelectrical characteristics of as-grown highresistance GaAs single crystals View Full Text


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Article Info

DATE

2010-06-08

AUTHORS

D. L. Budnitskii, O. B. Koretskaya, О. P. Тоlbanov, А. V. Tyazhev

ABSTRACT

The electrophysical and photoelectrical properties of high-resistance GaAs produced by single crystal growth are studied and analyzed. The electron (τn) and hole (τp) lifetimes are estimated. The charge-carrier lifetimes are compared in as-grown and diffusion high-resistance GaAs. The conclusion is made that in high-resistance GaAs produced by chromium diffusion, the charge-carrier recombination mechanism qualitatively differs from that in as-grown GaAs. The charge-carrier recombination in diffusion GaAs is determined by the occurrence of recombination barriers due to chromium diffusion. More... »

PAGES

44-48

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s11182-010-9385-2

DOI

http://dx.doi.org/10.1007/s11182-010-9385-2

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1011234909


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "V. D. Kuznetsov Siberian Physical-Technical Institute of the Tomsk State University, Tomsk, Russia", 
          "id": "http://www.grid.ac/institutes/grid.77602.34", 
          "name": [
            "V. D. Kuznetsov Siberian Physical-Technical Institute of the Tomsk State University, Tomsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Budnitskii", 
        "givenName": "D. L.", 
        "id": "sg:person.011741444323.50", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011741444323.50"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "V. D. Kuznetsov Siberian Physical-Technical Institute of the Tomsk State University, Tomsk, Russia", 
          "id": "http://www.grid.ac/institutes/grid.77602.34", 
          "name": [
            "V. D. Kuznetsov Siberian Physical-Technical Institute of the Tomsk State University, Tomsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Koretskaya", 
        "givenName": "O. B.", 
        "id": "sg:person.012726621573.90", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012726621573.90"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "V. D. Kuznetsov Siberian Physical-Technical Institute of the Tomsk State University, Tomsk, Russia", 
          "id": "http://www.grid.ac/institutes/grid.77602.34", 
          "name": [
            "V. D. Kuznetsov Siberian Physical-Technical Institute of the Tomsk State University, Tomsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "\u0422\u043elbanov", 
        "givenName": "\u041e. P.", 
        "id": "sg:person.011751141131.09", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011751141131.09"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "V. D. Kuznetsov Siberian Physical-Technical Institute of the Tomsk State University, Tomsk, Russia", 
          "id": "http://www.grid.ac/institutes/grid.77602.34", 
          "name": [
            "V. D. Kuznetsov Siberian Physical-Technical Institute of the Tomsk State University, Tomsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Tyazhev", 
        "givenName": "\u0410. V.", 
        "id": "sg:person.012177354373.10", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012177354373.10"
        ], 
        "type": "Person"
      }
    ], 
    "datePublished": "2010-06-08", 
    "datePublishedReg": "2010-06-08", 
    "description": "The electrophysical and photoelectrical properties of high-resistance GaAs produced by single crystal growth are studied and analyzed. The electron (\u03c4n) and hole (\u03c4p) lifetimes are estimated. The charge-carrier lifetimes are compared in as-grown and diffusion high-resistance GaAs. The conclusion is made that in high-resistance GaAs produced by chromium diffusion, the charge-carrier recombination mechanism qualitatively differs from that in as-grown GaAs. The charge-carrier recombination in diffusion GaAs is determined by the occurrence of recombination barriers due to chromium diffusion.", 
    "genre": "article", 
    "id": "sg:pub.10.1007/s11182-010-9385-2", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1313824", 
        "issn": [
          "1064-8887", 
          "1573-9228"
        ], 
        "name": "Russian Physics Journal", 
        "publisher": "Springer Nature", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "1", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "53"
      }
    ], 
    "keywords": [
      "conclusion", 
      "occurrence", 
      "mechanism", 
      "barriers", 
      "growth", 
      "characteristics", 
      "properties", 
      "lifetime", 
      "recombination", 
      "diffusion", 
      "charge-carrier recombination", 
      "single crystal growth", 
      "charge-carrier lifetime", 
      "chromium diffusion", 
      "photoelectrical properties", 
      "crystal growth", 
      "recombination mechanism", 
      "photoelectrical characteristics", 
      "single crystals", 
      "recombination barrier", 
      "hole lifetime", 
      "GaAs single crystals", 
      "crystals", 
      "GaAs", 
      "electrons", 
      "high-resistance GaAs", 
      "diffusion high-resistance GaAs", 
      "charge-carrier recombination mechanism", 
      "diffusion GaAs", 
      "highresistance GaAs single crystals"
    ], 
    "name": "Photoelectrical characteristics of as-grown highresistance GaAs single crystals", 
    "pagination": "44-48", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1011234909"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1007/s11182-010-9385-2"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1007/s11182-010-9385-2", 
      "https://app.dimensions.ai/details/publication/pub.1011234909"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2021-11-01T18:15", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20211101/entities/gbq_results/article/article_522.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1007/s11182-010-9385-2"
  }
]
 

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This table displays all metadata directly associated to this object as RDF triples.

109 TRIPLES      21 PREDICATES      55 URIs      47 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1007/s11182-010-9385-2 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author N588f8142f5504386bb60d0fdc987e096
4 schema:datePublished 2010-06-08
5 schema:datePublishedReg 2010-06-08
6 schema:description The electrophysical and photoelectrical properties of high-resistance GaAs produced by single crystal growth are studied and analyzed. The electron (τn) and hole (τp) lifetimes are estimated. The charge-carrier lifetimes are compared in as-grown and diffusion high-resistance GaAs. The conclusion is made that in high-resistance GaAs produced by chromium diffusion, the charge-carrier recombination mechanism qualitatively differs from that in as-grown GaAs. The charge-carrier recombination in diffusion GaAs is determined by the occurrence of recombination barriers due to chromium diffusion.
7 schema:genre article
8 schema:inLanguage en
9 schema:isAccessibleForFree false
10 schema:isPartOf Nc95bcc3b00e54bef80bf7218a28823b7
11 Ndcb855ddbd1f45a3aad2fa0028970aa8
12 sg:journal.1313824
13 schema:keywords GaAs
14 GaAs single crystals
15 barriers
16 characteristics
17 charge-carrier lifetime
18 charge-carrier recombination
19 charge-carrier recombination mechanism
20 chromium diffusion
21 conclusion
22 crystal growth
23 crystals
24 diffusion
25 diffusion GaAs
26 diffusion high-resistance GaAs
27 electrons
28 growth
29 high-resistance GaAs
30 highresistance GaAs single crystals
31 hole lifetime
32 lifetime
33 mechanism
34 occurrence
35 photoelectrical characteristics
36 photoelectrical properties
37 properties
38 recombination
39 recombination barrier
40 recombination mechanism
41 single crystal growth
42 single crystals
43 schema:name Photoelectrical characteristics of as-grown highresistance GaAs single crystals
44 schema:pagination 44-48
45 schema:productId N70c68445395645ba9f500f065282e7dd
46 Na37100c398fa46f6a95e681b3338b69c
47 schema:sameAs https://app.dimensions.ai/details/publication/pub.1011234909
48 https://doi.org/10.1007/s11182-010-9385-2
49 schema:sdDatePublished 2021-11-01T18:15
50 schema:sdLicense https://scigraph.springernature.com/explorer/license/
51 schema:sdPublisher Ne46e908bab8f4f9aa0a69e9235423f26
52 schema:url https://doi.org/10.1007/s11182-010-9385-2
53 sgo:license sg:explorer/license/
54 sgo:sdDataset articles
55 rdf:type schema:ScholarlyArticle
56 N127ef733c1ce4140866bdb484e29f773 rdf:first sg:person.012177354373.10
57 rdf:rest rdf:nil
58 N51cf1779a99f47d790722fba3c8650d3 rdf:first sg:person.011751141131.09
59 rdf:rest N127ef733c1ce4140866bdb484e29f773
60 N588f8142f5504386bb60d0fdc987e096 rdf:first sg:person.011741444323.50
61 rdf:rest N85f9270218cf4efdaddb61d3c4a7bb77
62 N70c68445395645ba9f500f065282e7dd schema:name doi
63 schema:value 10.1007/s11182-010-9385-2
64 rdf:type schema:PropertyValue
65 N85f9270218cf4efdaddb61d3c4a7bb77 rdf:first sg:person.012726621573.90
66 rdf:rest N51cf1779a99f47d790722fba3c8650d3
67 Na37100c398fa46f6a95e681b3338b69c schema:name dimensions_id
68 schema:value pub.1011234909
69 rdf:type schema:PropertyValue
70 Nc95bcc3b00e54bef80bf7218a28823b7 schema:issueNumber 1
71 rdf:type schema:PublicationIssue
72 Ndcb855ddbd1f45a3aad2fa0028970aa8 schema:volumeNumber 53
73 rdf:type schema:PublicationVolume
74 Ne46e908bab8f4f9aa0a69e9235423f26 schema:name Springer Nature - SN SciGraph project
75 rdf:type schema:Organization
76 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
77 schema:name Engineering
78 rdf:type schema:DefinedTerm
79 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
80 schema:name Materials Engineering
81 rdf:type schema:DefinedTerm
82 sg:journal.1313824 schema:issn 1064-8887
83 1573-9228
84 schema:name Russian Physics Journal
85 schema:publisher Springer Nature
86 rdf:type schema:Periodical
87 sg:person.011741444323.50 schema:affiliation grid-institutes:grid.77602.34
88 schema:familyName Budnitskii
89 schema:givenName D. L.
90 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011741444323.50
91 rdf:type schema:Person
92 sg:person.011751141131.09 schema:affiliation grid-institutes:grid.77602.34
93 schema:familyName Тоlbanov
94 schema:givenName О. P.
95 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011751141131.09
96 rdf:type schema:Person
97 sg:person.012177354373.10 schema:affiliation grid-institutes:grid.77602.34
98 schema:familyName Tyazhev
99 schema:givenName А. V.
100 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012177354373.10
101 rdf:type schema:Person
102 sg:person.012726621573.90 schema:affiliation grid-institutes:grid.77602.34
103 schema:familyName Koretskaya
104 schema:givenName O. B.
105 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012726621573.90
106 rdf:type schema:Person
107 grid-institutes:grid.77602.34 schema:alternateName V. D. Kuznetsov Siberian Physical-Technical Institute of the Tomsk State University, Tomsk, Russia
108 schema:name V. D. Kuznetsov Siberian Physical-Technical Institute of the Tomsk State University, Tomsk, Russia
109 rdf:type schema:Organization
 




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