Defects in the GaAs and InGaAs layers grown by low-temperature molecular-beam epitaxy View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2006-12

AUTHORS

L. G. Lavrentieva, M. D. Vilisova, I. A. Bobrovnikova, I. V. Ivonin, V. V. Preobrazhenskii, V. V. Chaldyshev

ABSTRACT

The problem of defect formation in the GaAs and InGaAs layers grown by low-temperature molecular-beam epitaxy is discussed. The effect of growth conditions (temperature and flux ratio between the elements of groups III and V) on the morphology of growth surface, internal structure, type, and concentration of electrically-and optically active defects is analyzed. A comparison is made between the defect formation processes occuring during the epitaxial growth and post-growth annealing of the layers. More... »

PAGES

1334-1343

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s11182-006-0263-x

DOI

http://dx.doi.org/10.1007/s11182-006-0263-x

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1021860169


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