Diagnostics of semiconductor structures by means of an apertureless near-field terahertz microscope View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2012-01

AUTHORS

V. N. Trukhin, A. O. Golubo, A. V. Lyutetsky, B. A. Matveyev, N. A. Pikhtin, L. L. Samoilov, I. D. Sapozhnikov, I. S. Tarasov, M. L. Fel’shtyn, D. P. Khor’kov

ABSTRACT

Carrier density distribution in various semiconductor microstructures is studied by means of a terahertz near-field microscope. The carrier density in the lightly doped p-InAsSbP(Zn) layer in an InAs-based sample is estimated.

PAGES

577-584

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s11141-012-9316-x

DOI

http://dx.doi.org/10.1007/s11141-012-9316-x

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1006256723


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