Li doped ZnO thin film: effect of substrate temperature on structure, optical and electrical properties View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2015-12

AUTHORS

Musbah Babikier, Qian Li, Jinzhong Wang, Dunbo Wang, Jianming Sun, Yuan Yan, Wenqi Wang, Qingjiang Yu, Shujie Jiao, Shiyong Gao, Hongtao Li

ABSTRACT

RF magnetron sputtering technique was employed to deposit Li-doped ZnO thin films onto quartz substrate at different substrate temperatures ranging from room temperature (RT) to 500 ∘C. X-ray diffraction analysis revealed that the deposited films had a hexagonal-wurtzite crystal structure with preferred orientation along the c-axis. Increasing the substrate temperature improved the crystallinity and caused a significant increase in the crystallite size (182 nm) for the film deposited at 500 ∘C. The energy band gap of the films deposited at RT, 350, 400, 450 and 500 ∘C were found to be 3.292, 3.282, 3.281, 3.28 and 3.269 eV, respectively. All films exhibited a broad UV-violet emission band centered on 407 nm and attributed to the radiative recombination processes near the band edge. A Hall mobility of ∼33.3 cm2/V s, concentration (n) of ∼7.6 ×1018cm-3 and resistivity of ∼39.7 Ω-cm were obtained for the film deposited at 500 ∘C. The results show that the substrate temperature plays a crucial role in the structural, morphological, optical and electrical properties. More... »

PAGES

3655-3665

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s11082-015-0256-5

DOI

http://dx.doi.org/10.1007/s11082-015-0256-5

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https://app.dimensions.ai/details/publication/pub.1040599068


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