Thin film silicon nanowire photovoltaic devices produced with gold and tin catalysts View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2011-10

AUTHORS

David Parlevliet, Philip Jennings

ABSTRACT

Silicon nanowires produced using pulsed plasma-enhanced chemical vapor deposition have been used as part of a thin film photovoltaic device. Nanowires of differing morphologies were produced by using both gold and tin thin films as a catalyst for growth. A prototype silicon nanowire-based thin-film photovoltaic device was produced by using doped silicon nanowires as the p-layer. Amorphous silicon was used as the intrinsic and n-layers of the device. The nanowires used in the photovoltaic devices had an average diameter of 420 nm after the deposition and coating of amorphous silicon intrinsic and n-layers. The nanowires were deposited in bulk as films of 3 to 42 μm in thickness. The resulting device, although of low efficiency, had a demonstrable photocurrent. Tin-catalyzed nanowires were found to produce a thin-film device with a measurable photocurrent whereas gold-catalyzed silicon nanowires did not. This was attributed to the length of the nanowires and thickness of the p-layer produced when using gold-catalyzed nanowires. More... »

PAGES

4431

Journal

TITLE

Journal of Nanoparticle Research

ISSUE

10

VOLUME

13

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s11051-011-0478-9

DOI

http://dx.doi.org/10.1007/s11051-011-0478-9

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1018180497


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