Effects of precursor concentration on electric properties of BiFe0.98Mn0.02O3 thin films prepared by sol–gel method View Full Text


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Article Info

DATE

2018-01

AUTHORS

Shiju Yang, Fengqing Zhang, Xiaobin Xie, Huajun Sun, Liping Zhang, Suhua Fan

ABSTRACT

BiFe0.98Mn0.02O3 (BFMO) thin films with different precursor concentration (0.20, 0.25, 0.30, and 0.35 mol/L) were deposited on ITO/glass substrate by sol–gel method. The influences of precursor concentration on the microstructure, surface morphology, ferroelectric property, leakage current behavior, and conduction mechanism of the deposited BFMO films were systematically investigated. XRD and SEM analysis show that the effect of precursor concentration on the microstructure and morphology of the films is very significant. P–E hysteresis loop indicate that the BFMO film with 0.3 mol/L has the maximum double remnant polarization (2Pr), which is 149.3 μC/cm2 with a double coercive field (2Ec) of 707.2 kV/cm at tested electric field of 1026 kV/cm. The BFMO film with 0.3 mol/L has the minimum leakage current density which is 9.8 × 10−8 A/cm2 at tested electric field of 300 kV/cm, and the current conduction mechanisms are Ohmic mechanism and the Child’s Law mechanism. As the precursor concentration increases, the transition voltage from Ohmic to Child’s law increases. More... »

PAGES

158-165

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s10971-017-4534-5

DOI

http://dx.doi.org/10.1007/s10971-017-4534-5

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https://app.dimensions.ai/details/publication/pub.1092666557


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46 schema:description BiFe0.98Mn0.02O3 (BFMO) thin films with different precursor concentration (0.20, 0.25, 0.30, and 0.35 mol/L) were deposited on ITO/glass substrate by sol–gel method. The influences of precursor concentration on the microstructure, surface morphology, ferroelectric property, leakage current behavior, and conduction mechanism of the deposited BFMO films were systematically investigated. XRD and SEM analysis show that the effect of precursor concentration on the microstructure and morphology of the films is very significant. P–E hysteresis loop indicate that the BFMO film with 0.3 mol/L has the maximum double remnant polarization (2Pr), which is 149.3 μC/cm2 with a double coercive field (2Ec) of 707.2 kV/cm at tested electric field of 1026 kV/cm. The BFMO film with 0.3 mol/L has the minimum leakage current density which is 9.8 × 10−8 A/cm2 at tested electric field of 300 kV/cm, and the current conduction mechanisms are Ohmic mechanism and the Child’s Law mechanism. As the precursor concentration increases, the transition voltage from Ohmic to Child’s law increases.
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