Notable shift of ultraviolet intensity on Sn-doped ZnO nanostructure fabricated by sol–gel method View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2013-03-31

AUTHORS

Xiaolong Shi, Xiaoru Zhao, Libing Duan, Huinan Sun, Jinming Liu, Xiaojun Bai, Mengmeng Guan, Mengmeng Cao, Jinru Liu

ABSTRACT

Sn-doped ZnO (SZO) thin films are deposited by sol–gel dip-coating method with Sn content at 0 at.% and 1–15 at.% with an increment of 2 at.%. The structure and luminescence of the films are investigated. X-ray diffraction results indicate that all the SZO samples show preferential orientation along the (002) direction, and the scanning electron microscope exhibits that the surface morphology of the films change from nanoparticles to nanorods with increasing Sn concentration. X-ray photoelectron spectroscopy reveals that Sn exists as valence of +4 in the matrix. The photoluminescence peaks at 381 and 398 nm are observed in all the samples. The ratio of intensity of peak at 381 nm to that of peak at 398 nm differed markedly. The intensity of peak at 398 nm might be due to the response for the Sn atoms, while the intensity of peak at 381 nm is probably related to the quantum size effect. More... »

PAGES

301-305

References to SciGraph publications

  • 2007-09-12. The effects of Al doping on the optical constants of ZnO thin films prepared by spray pyrolysis method in JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS
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    http://scigraph.springernature.com/pub.10.1007/s10971-013-3008-7

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    http://dx.doi.org/10.1007/s10971-013-3008-7

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