Defect formation in LT MBE InGaAs and GaAs View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2004-01

AUTHORS

L. L. Anisimova, A. K. Gutakovskii, I. V. Ivonin, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, S. V. Subach

ABSTRACT

Results are obtained from the experimental studies (atomic force and transmission microscopy) of the influence of III/V flux ratio on the topography and internal structure of LT MBE films of InGaAs and GaAs. The layers are shown to contain both the surface growth defects — the volcano-like pits and microdrops of III group elements, and the bulk defects — dislocations, stacking faults, microtwins, and phase microheterogeneities. A high-temperature annealing results in the additional formation of thermal etching pits at the surface and the nanosized arsenic clusters in the bulk. The origin of the defects is discussed. More... »

PAGES

s96-s102

Journal

TITLE

Journal of Structural Chemistry

ISSUE

Suppl 1

VOLUME

45

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s10947-006-0101-6

DOI

http://dx.doi.org/10.1007/s10947-006-0101-6

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1005549892


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