Raman scattering, emission and crystalline phase evolutions in Nd-doped Si-rich HfO2:N films View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2021-06-03

AUTHORS

T. Torchynska, L. G. Vega Macotela, G. Polupan, O. Melnichuk, L. Khomenkova, F. Gourbilleau

ABSTRACT

The impact of the evolution of crystalline phases with thermal annealing on the Raman scattering and emission spectra of the Nd-doped HfO2 films enriched with Si- and N- is reported. Films were grown on Si substrates by radio frequency magnetron sputtering of the composed target of Nd2O3, Si and HfO2 in argon-nitrogen reactive plasma. The films were annealed at TA = 800–1100 °C for tA = 15 min in a nitrogen atmosphere to stimulate a phase transformation process. The as-deposited and annealed films have been investigated using scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray diffraction, Raman scattering and photoluminescence (PL) techniques. The as-deposited and annealed films were found to have the fine-grained structure. The monoclinic phase was revealed after film annealing at 950 °C, which transforms into the tetragonal phase after annealing at 1100 °C. The PL study detected a broad PL band in the visible spectral range caused by the emission of host defects and Nd ions. The typical emission of Nd3+ ions was also observed in the infrared range (from 800 to 1400 nm). The peculiarities of Raman scattering and PL spectra, their modification with crystalline phase transformation, and the PL excitation mechanism in the films studied are analyzed and discussed. The use of argon-nitrogen plasma allows the manufacture of films with a fine grain structure that can also be of interest for optical waveguide applications. More... »

PAGES

17473-17481

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s10854-021-06280-z

DOI

http://dx.doi.org/10.1007/s10854-021-06280-z

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1138578177


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Instituto Polit\u00e9cnico Nacional - ESFM, Av. IPN, 07738, M\u00e9xico City, M\u00e9xico", 
          "id": "http://www.grid.ac/institutes/grid.418275.d", 
          "name": [
            "Instituto Polit\u00e9cnico Nacional - ESFM, Av. IPN, 07738, M\u00e9xico City, M\u00e9xico"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Torchynska", 
        "givenName": "T.", 
        "id": "sg:person.07350461223.08", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07350461223.08"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Instituto Polit\u00e9cnico Nacional - ESIME, Av. IPN, 07738, M\u00e9xico City, M\u00e9xico", 
          "id": "http://www.grid.ac/institutes/grid.418275.d", 
          "name": [
            "Instituto Polit\u00e9cnico Nacional - ESIME, Av. IPN, 07738, M\u00e9xico City, M\u00e9xico"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Macotela", 
        "givenName": "L. G. Vega", 
        "id": "sg:person.014125125543.43", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014125125543.43"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Instituto Polit\u00e9cnico Nacional - ESIME, Av. IPN, 07738, M\u00e9xico City, M\u00e9xico", 
          "id": "http://www.grid.ac/institutes/grid.418275.d", 
          "name": [
            "Instituto Polit\u00e9cnico Nacional - ESIME, Av. IPN, 07738, M\u00e9xico City, M\u00e9xico"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Polupan", 
        "givenName": "G.", 
        "id": "sg:person.014013153441.76", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014013153441.76"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Mykola Gogol State University of Nizhyn, 2 Hrafska Str, 16600, Nizhyn, Ukraine", 
          "id": "http://www.grid.ac/institutes/grid.445899.d", 
          "name": [
            "Mykola Gogol State University of Nizhyn, 2 Hrafska Str, 16600, Nizhyn, Ukraine"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Melnichuk", 
        "givenName": "O.", 
        "id": "sg:person.07513332571.70", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07513332571.70"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "National University \u201cKyiv-Mohyla Academy\u201d, 2 Skovorody Str., 04170, Kyiv, Ukraine", 
          "id": "http://www.grid.ac/institutes/grid.77971.3f", 
          "name": [
            "V. Lashkaryov Institute of Semiconductor Physics At NASU, 03028, Kyiv, Ukraine", 
            "National University \u201cKyiv-Mohyla Academy\u201d, 2 Skovorody Str., 04170, Kyiv, Ukraine"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Khomenkova", 
        "givenName": "L.", 
        "id": "sg:person.0777143227.34", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0777143227.34"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "CIMAP, UMR CNRS/CEA/ENSICAEN/UNICAEN, 14050, Caen Cedex 4, France", 
          "id": "http://www.grid.ac/institutes/grid.462794.a", 
          "name": [
            "CIMAP, UMR CNRS/CEA/ENSICAEN/UNICAEN, 14050, Caen Cedex 4, France"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Gourbilleau", 
        "givenName": "F.", 
        "id": "sg:person.01275733427.02", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01275733427.02"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1007/s11664-019-07847-7", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1123468925", 
          "https://doi.org/10.1007/s11664-019-07847-7"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2021-06-03", 
    "datePublishedReg": "2021-06-03", 
    "description": "The impact of the evolution of crystalline phases with thermal annealing on the Raman scattering and emission spectra of the Nd-doped HfO2 films enriched with Si- and N- is reported. Films were grown on Si substrates by radio frequency magnetron sputtering of the composed target of Nd2O3, Si and HfO2 in argon-nitrogen reactive plasma. The films were annealed at TA\u2009=\u2009800\u20131100\u00a0\u00b0C for tA\u2009=\u200915\u00a0min in a nitrogen atmosphere to stimulate a phase transformation process. The as-deposited and annealed films have been investigated using scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray diffraction, Raman scattering and photoluminescence (PL) techniques. The as-deposited and annealed films were found to have the fine-grained structure. The monoclinic phase was revealed after film annealing at 950\u00a0\u00b0C, which transforms into the tetragonal phase after annealing at 1100\u00a0\u00b0C. The PL study detected a broad PL band in the visible spectral range caused by the emission of host defects and Nd ions. The typical emission of Nd3+ ions was also observed in the infrared range (from 800 to 1400\u00a0nm). The peculiarities of Raman scattering and PL spectra, their modification with crystalline phase transformation, and the PL excitation mechanism in the films studied are analyzed and discussed. The use of argon-nitrogen plasma allows the manufacture of films with a fine grain structure that can also be of interest for optical waveguide applications.", 
    "genre": "article", 
    "id": "sg:pub.10.1007/s10854-021-06280-z", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136825", 
        "issn": [
          "0957-4522", 
          "1573-482X"
        ], 
        "name": "Journal of Materials Science: Materials in Electronics", 
        "publisher": "Springer Nature", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "13", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "32"
      }
    ], 
    "keywords": [
      "Raman scattering", 
      "radio frequency magnetron sputtering", 
      "optical waveguide applications", 
      "frequency magnetron sputtering", 
      "argon-nitrogen plasma", 
      "visible spectral range", 
      "energy dispersive X-ray spectroscopy", 
      "X-ray spectroscopy", 
      "broad PL band", 
      "waveguide applications", 
      "reactive plasma", 
      "spectral range", 
      "infrared range", 
      "excitation mechanism", 
      "photoluminescence techniques", 
      "fine grain structure", 
      "PL spectra", 
      "magnetron sputtering", 
      "emission spectra", 
      "X-ray diffraction", 
      "PL studies", 
      "Nd ions", 
      "HfO2 films", 
      "N films", 
      "Si substrate", 
      "host defects", 
      "PL band", 
      "scattering", 
      "manufacture of films", 
      "phase transformation process", 
      "crystalline phase transformation", 
      "thermal annealing", 
      "crystalline phase evolution", 
      "monoclinic phase", 
      "grain structure", 
      "films", 
      "film annealing", 
      "tetragonal phase", 
      "typical emission", 
      "Nd", 
      "emission", 
      "phase transformation", 
      "phase evolution", 
      "electron microscopy", 
      "HfO2", 
      "plasma", 
      "Si", 
      "spectra", 
      "ions", 
      "crystalline phase", 
      "nitrogen atmosphere", 
      "annealing", 
      "sputtering", 
      "Nd3", 
      "spectroscopy", 
      "diffraction", 
      "phase", 
      "Nd2O3", 
      "Ta", 
      "atmosphere", 
      "microscopy", 
      "band", 
      "structure", 
      "evolution", 
      "range", 
      "manufacture", 
      "substrate", 
      "transformation process", 
      "applications", 
      "defects", 
      "process", 
      "technique", 
      "peculiarities", 
      "modification", 
      "target", 
      "min", 
      "transformation", 
      "mechanism", 
      "use", 
      "interest", 
      "impact", 
      "study"
    ], 
    "name": "Raman scattering, emission and crystalline phase evolutions in Nd-doped Si-rich HfO2:N films", 
    "pagination": "17473-17481", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1138578177"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1007/s10854-021-06280-z"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1007/s10854-021-06280-z", 
      "https://app.dimensions.ai/details/publication/pub.1138578177"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-10-01T06:48", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20221001/entities/gbq_results/article/article_903.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1007/s10854-021-06280-z"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1007/s10854-021-06280-z'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1007/s10854-021-06280-z'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1007/s10854-021-06280-z'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1007/s10854-021-06280-z'


 

This table displays all metadata directly associated to this object as RDF triples.

190 TRIPLES      21 PREDICATES      107 URIs      98 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1007/s10854-021-06280-z schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author N58349b6f683a4d9bb9193276764b1cca
4 schema:citation sg:pub.10.1007/s11664-019-07847-7
5 schema:datePublished 2021-06-03
6 schema:datePublishedReg 2021-06-03
7 schema:description The impact of the evolution of crystalline phases with thermal annealing on the Raman scattering and emission spectra of the Nd-doped HfO2 films enriched with Si- and N- is reported. Films were grown on Si substrates by radio frequency magnetron sputtering of the composed target of Nd2O3, Si and HfO2 in argon-nitrogen reactive plasma. The films were annealed at TA = 800–1100 °C for tA = 15 min in a nitrogen atmosphere to stimulate a phase transformation process. The as-deposited and annealed films have been investigated using scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray diffraction, Raman scattering and photoluminescence (PL) techniques. The as-deposited and annealed films were found to have the fine-grained structure. The monoclinic phase was revealed after film annealing at 950 °C, which transforms into the tetragonal phase after annealing at 1100 °C. The PL study detected a broad PL band in the visible spectral range caused by the emission of host defects and Nd ions. The typical emission of Nd3+ ions was also observed in the infrared range (from 800 to 1400 nm). The peculiarities of Raman scattering and PL spectra, their modification with crystalline phase transformation, and the PL excitation mechanism in the films studied are analyzed and discussed. The use of argon-nitrogen plasma allows the manufacture of films with a fine grain structure that can also be of interest for optical waveguide applications.
8 schema:genre article
9 schema:isAccessibleForFree false
10 schema:isPartOf N2b6d08639a3b4c859c50f0be8c765dc6
11 N4714c6aec06f408bb1b6901a0eb84733
12 sg:journal.1136825
13 schema:keywords HfO2
14 HfO2 films
15 N films
16 Nd
17 Nd ions
18 Nd2O3
19 Nd3
20 PL band
21 PL spectra
22 PL studies
23 Raman scattering
24 Si
25 Si substrate
26 Ta
27 X-ray diffraction
28 X-ray spectroscopy
29 annealing
30 applications
31 argon-nitrogen plasma
32 atmosphere
33 band
34 broad PL band
35 crystalline phase
36 crystalline phase evolution
37 crystalline phase transformation
38 defects
39 diffraction
40 electron microscopy
41 emission
42 emission spectra
43 energy dispersive X-ray spectroscopy
44 evolution
45 excitation mechanism
46 film annealing
47 films
48 fine grain structure
49 frequency magnetron sputtering
50 grain structure
51 host defects
52 impact
53 infrared range
54 interest
55 ions
56 magnetron sputtering
57 manufacture
58 manufacture of films
59 mechanism
60 microscopy
61 min
62 modification
63 monoclinic phase
64 nitrogen atmosphere
65 optical waveguide applications
66 peculiarities
67 phase
68 phase evolution
69 phase transformation
70 phase transformation process
71 photoluminescence techniques
72 plasma
73 process
74 radio frequency magnetron sputtering
75 range
76 reactive plasma
77 scattering
78 spectra
79 spectral range
80 spectroscopy
81 sputtering
82 structure
83 study
84 substrate
85 target
86 technique
87 tetragonal phase
88 thermal annealing
89 transformation
90 transformation process
91 typical emission
92 use
93 visible spectral range
94 waveguide applications
95 schema:name Raman scattering, emission and crystalline phase evolutions in Nd-doped Si-rich HfO2:N films
96 schema:pagination 17473-17481
97 schema:productId N72f98634daa14709ae75ee289da40e33
98 Nbafa0b08f8274df3b12c7375854dd171
99 schema:sameAs https://app.dimensions.ai/details/publication/pub.1138578177
100 https://doi.org/10.1007/s10854-021-06280-z
101 schema:sdDatePublished 2022-10-01T06:48
102 schema:sdLicense https://scigraph.springernature.com/explorer/license/
103 schema:sdPublisher N4f82aba6ca464e3db88e97bd1dd6495f
104 schema:url https://doi.org/10.1007/s10854-021-06280-z
105 sgo:license sg:explorer/license/
106 sgo:sdDataset articles
107 rdf:type schema:ScholarlyArticle
108 N2b6d08639a3b4c859c50f0be8c765dc6 schema:issueNumber 13
109 rdf:type schema:PublicationIssue
110 N4714c6aec06f408bb1b6901a0eb84733 schema:volumeNumber 32
111 rdf:type schema:PublicationVolume
112 N4f82aba6ca464e3db88e97bd1dd6495f schema:name Springer Nature - SN SciGraph project
113 rdf:type schema:Organization
114 N58349b6f683a4d9bb9193276764b1cca rdf:first sg:person.07350461223.08
115 rdf:rest N99e72811557f430a937a1dbd025d3326
116 N72f98634daa14709ae75ee289da40e33 schema:name dimensions_id
117 schema:value pub.1138578177
118 rdf:type schema:PropertyValue
119 N75644d2cb8a84aef8d10f3bbe794bd76 rdf:first sg:person.0777143227.34
120 rdf:rest N9fd1170f64bf4f82b569f791f0ccf578
121 N99e72811557f430a937a1dbd025d3326 rdf:first sg:person.014125125543.43
122 rdf:rest Ncf4a17757391495bb5c9fb7494ef0246
123 N9fd1170f64bf4f82b569f791f0ccf578 rdf:first sg:person.01275733427.02
124 rdf:rest rdf:nil
125 Nbafa0b08f8274df3b12c7375854dd171 schema:name doi
126 schema:value 10.1007/s10854-021-06280-z
127 rdf:type schema:PropertyValue
128 Ncf4a17757391495bb5c9fb7494ef0246 rdf:first sg:person.014013153441.76
129 rdf:rest Nf5ebeb69fdb04779b16c1fdf48935561
130 Nf5ebeb69fdb04779b16c1fdf48935561 rdf:first sg:person.07513332571.70
131 rdf:rest N75644d2cb8a84aef8d10f3bbe794bd76
132 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
133 schema:name Engineering
134 rdf:type schema:DefinedTerm
135 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
136 schema:name Materials Engineering
137 rdf:type schema:DefinedTerm
138 sg:journal.1136825 schema:issn 0957-4522
139 1573-482X
140 schema:name Journal of Materials Science: Materials in Electronics
141 schema:publisher Springer Nature
142 rdf:type schema:Periodical
143 sg:person.01275733427.02 schema:affiliation grid-institutes:grid.462794.a
144 schema:familyName Gourbilleau
145 schema:givenName F.
146 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01275733427.02
147 rdf:type schema:Person
148 sg:person.014013153441.76 schema:affiliation grid-institutes:grid.418275.d
149 schema:familyName Polupan
150 schema:givenName G.
151 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014013153441.76
152 rdf:type schema:Person
153 sg:person.014125125543.43 schema:affiliation grid-institutes:grid.418275.d
154 schema:familyName Macotela
155 schema:givenName L. G. Vega
156 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014125125543.43
157 rdf:type schema:Person
158 sg:person.07350461223.08 schema:affiliation grid-institutes:grid.418275.d
159 schema:familyName Torchynska
160 schema:givenName T.
161 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07350461223.08
162 rdf:type schema:Person
163 sg:person.07513332571.70 schema:affiliation grid-institutes:grid.445899.d
164 schema:familyName Melnichuk
165 schema:givenName O.
166 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07513332571.70
167 rdf:type schema:Person
168 sg:person.0777143227.34 schema:affiliation grid-institutes:grid.77971.3f
169 schema:familyName Khomenkova
170 schema:givenName L.
171 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0777143227.34
172 rdf:type schema:Person
173 sg:pub.10.1007/s11664-019-07847-7 schema:sameAs https://app.dimensions.ai/details/publication/pub.1123468925
174 https://doi.org/10.1007/s11664-019-07847-7
175 rdf:type schema:CreativeWork
176 grid-institutes:grid.418275.d schema:alternateName Instituto Politécnico Nacional - ESFM, Av. IPN, 07738, México City, México
177 Instituto Politécnico Nacional - ESIME, Av. IPN, 07738, México City, México
178 schema:name Instituto Politécnico Nacional - ESFM, Av. IPN, 07738, México City, México
179 Instituto Politécnico Nacional - ESIME, Av. IPN, 07738, México City, México
180 rdf:type schema:Organization
181 grid-institutes:grid.445899.d schema:alternateName Mykola Gogol State University of Nizhyn, 2 Hrafska Str, 16600, Nizhyn, Ukraine
182 schema:name Mykola Gogol State University of Nizhyn, 2 Hrafska Str, 16600, Nizhyn, Ukraine
183 rdf:type schema:Organization
184 grid-institutes:grid.462794.a schema:alternateName CIMAP, UMR CNRS/CEA/ENSICAEN/UNICAEN, 14050, Caen Cedex 4, France
185 schema:name CIMAP, UMR CNRS/CEA/ENSICAEN/UNICAEN, 14050, Caen Cedex 4, France
186 rdf:type schema:Organization
187 grid-institutes:grid.77971.3f schema:alternateName National University “Kyiv-Mohyla Academy”, 2 Skovorody Str., 04170, Kyiv, Ukraine
188 schema:name National University “Kyiv-Mohyla Academy”, 2 Skovorody Str., 04170, Kyiv, Ukraine
189 V. Lashkaryov Institute of Semiconductor Physics At NASU, 03028, Kyiv, Ukraine
190 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...