Effect of MgO addition on sintering temperature, crystal structure, dielectric and ferroelectric properties of lead-free BZT ceramics View Full Text


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Article Info

DATE

2019-03-08

AUTHORS

Yuan Xu, Kaituo Zhang, Lei Fu, Ting Tong, Le Cao, Qifeng Zhang, Ligui Chen

ABSTRACT

MgO addition Ba(Zr0.15Ti0.85)O3 (BZT) ceramics was prepared using conventional solid state reaction method and effect the MgO content in BZT ceramics on their sintering temperature, microscopic appearance, dielectric properties and ferroelectric properties was investigated. The result is that the addition of MgO can greatly reduce the sintering temperature of BZT ceramics. The average grain size can be gradually reduced as the concentration of MgO increases. The lattice constant is reduced by Mg2+ entering the crystal structure instead of Ti4+ or Zr4+. BZT ceramics exhibit excellent dielectric properties when a small amount of MgO was added. The maximum dielectric constant moves to the low temperature region when MgO content was increases. The hysteresis loop becomes thinner and the coercive field was significantly reduced. More... »

PAGES

1-8

References to SciGraph publications

  • 2014-05. Effect of Zr/Ti ratio on the dielectric and piezoelectric properties of Mn-doped Ba(Zr, Ti)O3 ceramics in JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS
  • 2015-12. High temperature dielectric ceramics: a review of temperature-stable high-permittivity perovskites in JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS
  • 2008-04. Microstructure and dielectric properties of BaZrxTi1−xO3 ceramics in JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS
  • 1988-11. The Curie point temperature of Ba(Ti1−xZrx)O3 solid solutions in JOURNAL OF MATERIALS SCIENCE
  • 2016-09. Influence of Zr/Ti ratio on the dielectric properties of BaZrxTi1−xO3 ceramics for high-voltage capacitor applications in JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS
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    http://scigraph.springernature.com/pub.10.1007/s10854-019-01073-x

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