Bismuth induced crystallization of hydrogenated amorphous silicon thin films: effect of annealing time View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2019-03-07

AUTHORS

Meriem Zouini, Saleh Khamlich, Wissem Dimassi

ABSTRACT

This paper investigates the effect of annealing time and Bismuth (Bi) interlayer on the crystallization of hydrogenated amorphous silicon (a-Si:H) thin films. Bismuth thin films, 50 nm in thickness, were deposited by physical vapor deposition on ⟨100⟩ oriented silicon substrates. Afterwards, a-Si:H films were elaborated by plasma enhanced chemical vapor deposition (PECVD) at fixed growth conditions to cover the Bi coated Si substrates. To investigate the role of the deposited Bi interlayer as a Metal Induced Crystallization (MIC) of amorphous Si thin films, annealing experiments were performed under N2 atmosphere at 400 °C for different annealing times ranging from 2 h30 to 5 h. The effect of annealing time on the amorphous a-Si:H thin films in the presence of Bi interlayer has been evaluated in terms of crystallinity, preferential orientations, average surface roughness and atomic distribution using X-ray diffraction (XRD), Raman spectroscopy, atomic force microscopy (AFM), scanning electron microcopies (SEM) and energy dispersive X-ray analysis (EDS). These results showed that a-Si:H thin films with high crystallinity could be obtained at annealing time (ta) ≥ 2 h30. The electrical properties study of a-Si:H thin films revealed its correlation with their crystalline distribution which was enhanced due to the presence of the Bi interlayer. More... »

PAGES

1-11

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s10854-019-01028-2

DOI

http://dx.doi.org/10.1007/s10854-019-01028-2

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1112609343


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Tunis El Manar University", 
          "id": "https://www.grid.ac/institutes/grid.12574.35", 
          "name": [
            "Laboratoire de photovolta\u00efque, Centre de Recherches et des Technologies de l\u2019Energie, Borj Cedria, B.P N\u00b095, 2050, Hammam Lif, Tunisia", 
            "Faculty of Science, Manar University, 2092, Tunis, Tunisia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Zouini", 
        "givenName": "Meriem", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "National Research Foundation", 
          "id": "https://www.grid.ac/institutes/grid.425534.1", 
          "name": [
            "UNESCO UNISA Africa Chair in Nanosciences and Nanotechnology, College of Graduate Studies, University of South Africa, Pretoria, South Africa", 
            "Nanoenergy for Sustainable Development in Africa (NESDAF), Material Research Department, iThemba LABS-National Research Foundation, 1 Old Faure Road,, P.O. Box 722, 7129, Somerset West, Western Cape Province, South Africa"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Khamlich", 
        "givenName": "Saleh", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Research and Technology Center of Energy", 
          "id": "https://www.grid.ac/institutes/grid.463173.4", 
          "name": [
            "Laboratoire de photovolta\u00efque, Centre de Recherches et des Technologies de l\u2019Energie, Borj Cedria, B.P N\u00b095, 2050, Hammam Lif, Tunisia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Dimassi", 
        "givenName": "Wissem", 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "https://doi.org/10.1016/j.jnoncrysol.2016.02.026", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1000749426"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.surfcoat.2008.06.025", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1004330317"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/bf00179225", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1004639771", 
          "https://doi.org/10.1007/bf00179225"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.solmat.2007.10.003", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1008408805"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1088/0268-1242/18/8/312", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1026935631"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0146-3535(84)90085-6", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1028208850"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0146-3535(84)90085-6", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1028208850"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/bf02880522", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1031293884", 
          "https://doi.org/10.1007/bf02880522"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/bf02880522", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1031293884", 
          "https://doi.org/10.1007/bf02880522"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.tsf.2005.12.067", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1031741313"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/s10973-015-4871-y", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1033200685", 
          "https://doi.org/10.1007/s10973-015-4871-y"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/s10973-015-4871-y", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1033200685", 
          "https://doi.org/10.1007/s10973-015-4871-y"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.snb.2008.06.006", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1035897927"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0040-6090(87)90303-8", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1036442583"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0040-6090(87)90303-8", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1036442583"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.jcrysgro.2005.02.016", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1039873397"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.solmat.2010.06.031", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1040367253"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/s0042-207x(98)00190-0", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1042649506"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.tsf.2005.11.016", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1049545879"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1023/a:1021575531591", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1051984630", 
          "https://doi.org/10.1023/a:1021575531591"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.solener.2014.02.004", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1053335275"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/jp010995n", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1056046038"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/jp010995n", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1056046038"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.111781", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057659340"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.122256", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057686419"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.1378334", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057700722"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.1555680", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057719180"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.1604958", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057724999"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.1760228", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057816057"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.1790072", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057822307"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.2816251", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057874610"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.356432", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057975544"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1080/00222348.2016.1153402", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1058273821"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrevb.36.3344", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060543685"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrevb.36.3344", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060543685"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrevlett.82.197", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060819057"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrevlett.82.197", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060819057"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1109/16.791997", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1061096688"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/s10854-017-6808-7", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1084027587", 
          "https://doi.org/10.1007/s10854-017-6808-7"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/s10854-017-6808-7", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1084027587", 
          "https://doi.org/10.1007/s10854-017-6808-7"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.tsf.2017.03.050", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1084111685"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.egypro.2017.03.104", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1085041783"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/s10853-017-1706-1", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1092459655", 
          "https://doi.org/10.1007/s10853-017-1706-1"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2019-03-07", 
    "datePublishedReg": "2019-03-07", 
    "description": "This paper investigates the effect of annealing time and Bismuth (Bi) interlayer on the crystallization of hydrogenated amorphous silicon (a-Si:H) thin films. Bismuth thin films, 50 nm in thickness, were deposited by physical vapor deposition on \u27e8100\u27e9 oriented silicon substrates. Afterwards, a-Si:H films were elaborated by plasma enhanced chemical vapor deposition (PECVD) at fixed growth conditions to cover the Bi coated Si substrates. To investigate the role of the deposited Bi interlayer as a Metal Induced Crystallization (MIC) of amorphous Si thin films, annealing experiments were performed under N2 atmosphere at 400 \u00b0C for different annealing times ranging from 2 h30 to 5 h. The effect of annealing time on the amorphous a-Si:H thin films in the presence of Bi interlayer has been evaluated in terms of crystallinity, preferential orientations, average surface roughness and atomic distribution using X-ray diffraction (XRD), Raman spectroscopy, atomic force microscopy (AFM), scanning electron microcopies (SEM) and energy dispersive X-ray analysis (EDS). These results showed that a-Si:H thin films with high crystallinity could be obtained at annealing time (ta) \u2265 2 h30. The electrical properties study of a-Si:H thin films revealed its correlation with their crystalline distribution which was enhanced due to the presence of the Bi interlayer.", 
    "genre": "research_article", 
    "id": "sg:pub.10.1007/s10854-019-01028-2", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136825", 
        "issn": [
          "0957-4522", 
          "1573-482X"
        ], 
        "name": "Journal of Materials Science: Materials in Electronics", 
        "type": "Periodical"
      }
    ], 
    "name": "Bismuth induced crystallization of hydrogenated amorphous silicon thin films: effect of annealing time", 
    "pagination": "1-11", 
    "productId": [
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "0839e1a943004da6d526eb4dff5c56553e480d4e6585567407a305ea32b8c47c"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1007/s10854-019-01028-2"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1112609343"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1007/s10854-019-01028-2", 
      "https://app.dimensions.ai/details/publication/pub.1112609343"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2019-04-11T11:19", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000354_0000000354/records_11707_00000002.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://link.springer.com/10.1007%2Fs10854-019-01028-2"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1007/s10854-019-01028-2'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1007/s10854-019-01028-2'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1007/s10854-019-01028-2'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1007/s10854-019-01028-2'


 

This table displays all metadata directly associated to this object as RDF triples.

185 TRIPLES      21 PREDICATES      59 URIs      16 LITERALS      5 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1007/s10854-019-01028-2 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author Ned1d51f16c2d43e885ab1bcf2baa5acf
4 schema:citation sg:pub.10.1007/bf00179225
5 sg:pub.10.1007/bf02880522
6 sg:pub.10.1007/s10853-017-1706-1
7 sg:pub.10.1007/s10854-017-6808-7
8 sg:pub.10.1007/s10973-015-4871-y
9 sg:pub.10.1023/a:1021575531591
10 https://doi.org/10.1016/0040-6090(87)90303-8
11 https://doi.org/10.1016/0146-3535(84)90085-6
12 https://doi.org/10.1016/j.egypro.2017.03.104
13 https://doi.org/10.1016/j.jcrysgro.2005.02.016
14 https://doi.org/10.1016/j.jnoncrysol.2016.02.026
15 https://doi.org/10.1016/j.snb.2008.06.006
16 https://doi.org/10.1016/j.solener.2014.02.004
17 https://doi.org/10.1016/j.solmat.2007.10.003
18 https://doi.org/10.1016/j.solmat.2010.06.031
19 https://doi.org/10.1016/j.surfcoat.2008.06.025
20 https://doi.org/10.1016/j.tsf.2005.11.016
21 https://doi.org/10.1016/j.tsf.2005.12.067
22 https://doi.org/10.1016/j.tsf.2017.03.050
23 https://doi.org/10.1016/s0042-207x(98)00190-0
24 https://doi.org/10.1021/jp010995n
25 https://doi.org/10.1063/1.111781
26 https://doi.org/10.1063/1.122256
27 https://doi.org/10.1063/1.1378334
28 https://doi.org/10.1063/1.1555680
29 https://doi.org/10.1063/1.1604958
30 https://doi.org/10.1063/1.1760228
31 https://doi.org/10.1063/1.1790072
32 https://doi.org/10.1063/1.2816251
33 https://doi.org/10.1063/1.356432
34 https://doi.org/10.1080/00222348.2016.1153402
35 https://doi.org/10.1088/0268-1242/18/8/312
36 https://doi.org/10.1103/physrevb.36.3344
37 https://doi.org/10.1103/physrevlett.82.197
38 https://doi.org/10.1109/16.791997
39 schema:datePublished 2019-03-07
40 schema:datePublishedReg 2019-03-07
41 schema:description This paper investigates the effect of annealing time and Bismuth (Bi) interlayer on the crystallization of hydrogenated amorphous silicon (a-Si:H) thin films. Bismuth thin films, 50 nm in thickness, were deposited by physical vapor deposition on ⟨100⟩ oriented silicon substrates. Afterwards, a-Si:H films were elaborated by plasma enhanced chemical vapor deposition (PECVD) at fixed growth conditions to cover the Bi coated Si substrates. To investigate the role of the deposited Bi interlayer as a Metal Induced Crystallization (MIC) of amorphous Si thin films, annealing experiments were performed under N2 atmosphere at 400 °C for different annealing times ranging from 2 h30 to 5 h. The effect of annealing time on the amorphous a-Si:H thin films in the presence of Bi interlayer has been evaluated in terms of crystallinity, preferential orientations, average surface roughness and atomic distribution using X-ray diffraction (XRD), Raman spectroscopy, atomic force microscopy (AFM), scanning electron microcopies (SEM) and energy dispersive X-ray analysis (EDS). These results showed that a-Si:H thin films with high crystallinity could be obtained at annealing time (ta) ≥ 2 h30. The electrical properties study of a-Si:H thin films revealed its correlation with their crystalline distribution which was enhanced due to the presence of the Bi interlayer.
42 schema:genre research_article
43 schema:inLanguage en
44 schema:isAccessibleForFree false
45 schema:isPartOf sg:journal.1136825
46 schema:name Bismuth induced crystallization of hydrogenated amorphous silicon thin films: effect of annealing time
47 schema:pagination 1-11
48 schema:productId N548568f960514e39a2f0b64541e346ae
49 N94d9884cb5a84b1d9c35b1f9453c0a91
50 Nd48459ca770542b8b26575b9bd892607
51 schema:sameAs https://app.dimensions.ai/details/publication/pub.1112609343
52 https://doi.org/10.1007/s10854-019-01028-2
53 schema:sdDatePublished 2019-04-11T11:19
54 schema:sdLicense https://scigraph.springernature.com/explorer/license/
55 schema:sdPublisher N6cc94d238b2d4b68bc8fcb4f8071ba3f
56 schema:url https://link.springer.com/10.1007%2Fs10854-019-01028-2
57 sgo:license sg:explorer/license/
58 sgo:sdDataset articles
59 rdf:type schema:ScholarlyArticle
60 N28bc5f6e319b48febf5eff433206c8c4 rdf:first Ne785410a6a5c4510beb24444b91db420
61 rdf:rest rdf:nil
62 N471c8cd3c36b4f3a8fbdcb52e02357d4 schema:affiliation https://www.grid.ac/institutes/grid.12574.35
63 schema:familyName Zouini
64 schema:givenName Meriem
65 rdf:type schema:Person
66 N548568f960514e39a2f0b64541e346ae schema:name dimensions_id
67 schema:value pub.1112609343
68 rdf:type schema:PropertyValue
69 N6cc94d238b2d4b68bc8fcb4f8071ba3f schema:name Springer Nature - SN SciGraph project
70 rdf:type schema:Organization
71 N6fa6f5fbd5ee4c03a304d290682b1981 schema:affiliation https://www.grid.ac/institutes/grid.425534.1
72 schema:familyName Khamlich
73 schema:givenName Saleh
74 rdf:type schema:Person
75 N94d9884cb5a84b1d9c35b1f9453c0a91 schema:name doi
76 schema:value 10.1007/s10854-019-01028-2
77 rdf:type schema:PropertyValue
78 Nc1955273c8854a55a5e005cd3c182880 rdf:first N6fa6f5fbd5ee4c03a304d290682b1981
79 rdf:rest N28bc5f6e319b48febf5eff433206c8c4
80 Nd48459ca770542b8b26575b9bd892607 schema:name readcube_id
81 schema:value 0839e1a943004da6d526eb4dff5c56553e480d4e6585567407a305ea32b8c47c
82 rdf:type schema:PropertyValue
83 Ne785410a6a5c4510beb24444b91db420 schema:affiliation https://www.grid.ac/institutes/grid.463173.4
84 schema:familyName Dimassi
85 schema:givenName Wissem
86 rdf:type schema:Person
87 Ned1d51f16c2d43e885ab1bcf2baa5acf rdf:first N471c8cd3c36b4f3a8fbdcb52e02357d4
88 rdf:rest Nc1955273c8854a55a5e005cd3c182880
89 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
90 schema:name Engineering
91 rdf:type schema:DefinedTerm
92 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
93 schema:name Materials Engineering
94 rdf:type schema:DefinedTerm
95 sg:journal.1136825 schema:issn 0957-4522
96 1573-482X
97 schema:name Journal of Materials Science: Materials in Electronics
98 rdf:type schema:Periodical
99 sg:pub.10.1007/bf00179225 schema:sameAs https://app.dimensions.ai/details/publication/pub.1004639771
100 https://doi.org/10.1007/bf00179225
101 rdf:type schema:CreativeWork
102 sg:pub.10.1007/bf02880522 schema:sameAs https://app.dimensions.ai/details/publication/pub.1031293884
103 https://doi.org/10.1007/bf02880522
104 rdf:type schema:CreativeWork
105 sg:pub.10.1007/s10853-017-1706-1 schema:sameAs https://app.dimensions.ai/details/publication/pub.1092459655
106 https://doi.org/10.1007/s10853-017-1706-1
107 rdf:type schema:CreativeWork
108 sg:pub.10.1007/s10854-017-6808-7 schema:sameAs https://app.dimensions.ai/details/publication/pub.1084027587
109 https://doi.org/10.1007/s10854-017-6808-7
110 rdf:type schema:CreativeWork
111 sg:pub.10.1007/s10973-015-4871-y schema:sameAs https://app.dimensions.ai/details/publication/pub.1033200685
112 https://doi.org/10.1007/s10973-015-4871-y
113 rdf:type schema:CreativeWork
114 sg:pub.10.1023/a:1021575531591 schema:sameAs https://app.dimensions.ai/details/publication/pub.1051984630
115 https://doi.org/10.1023/a:1021575531591
116 rdf:type schema:CreativeWork
117 https://doi.org/10.1016/0040-6090(87)90303-8 schema:sameAs https://app.dimensions.ai/details/publication/pub.1036442583
118 rdf:type schema:CreativeWork
119 https://doi.org/10.1016/0146-3535(84)90085-6 schema:sameAs https://app.dimensions.ai/details/publication/pub.1028208850
120 rdf:type schema:CreativeWork
121 https://doi.org/10.1016/j.egypro.2017.03.104 schema:sameAs https://app.dimensions.ai/details/publication/pub.1085041783
122 rdf:type schema:CreativeWork
123 https://doi.org/10.1016/j.jcrysgro.2005.02.016 schema:sameAs https://app.dimensions.ai/details/publication/pub.1039873397
124 rdf:type schema:CreativeWork
125 https://doi.org/10.1016/j.jnoncrysol.2016.02.026 schema:sameAs https://app.dimensions.ai/details/publication/pub.1000749426
126 rdf:type schema:CreativeWork
127 https://doi.org/10.1016/j.snb.2008.06.006 schema:sameAs https://app.dimensions.ai/details/publication/pub.1035897927
128 rdf:type schema:CreativeWork
129 https://doi.org/10.1016/j.solener.2014.02.004 schema:sameAs https://app.dimensions.ai/details/publication/pub.1053335275
130 rdf:type schema:CreativeWork
131 https://doi.org/10.1016/j.solmat.2007.10.003 schema:sameAs https://app.dimensions.ai/details/publication/pub.1008408805
132 rdf:type schema:CreativeWork
133 https://doi.org/10.1016/j.solmat.2010.06.031 schema:sameAs https://app.dimensions.ai/details/publication/pub.1040367253
134 rdf:type schema:CreativeWork
135 https://doi.org/10.1016/j.surfcoat.2008.06.025 schema:sameAs https://app.dimensions.ai/details/publication/pub.1004330317
136 rdf:type schema:CreativeWork
137 https://doi.org/10.1016/j.tsf.2005.11.016 schema:sameAs https://app.dimensions.ai/details/publication/pub.1049545879
138 rdf:type schema:CreativeWork
139 https://doi.org/10.1016/j.tsf.2005.12.067 schema:sameAs https://app.dimensions.ai/details/publication/pub.1031741313
140 rdf:type schema:CreativeWork
141 https://doi.org/10.1016/j.tsf.2017.03.050 schema:sameAs https://app.dimensions.ai/details/publication/pub.1084111685
142 rdf:type schema:CreativeWork
143 https://doi.org/10.1016/s0042-207x(98)00190-0 schema:sameAs https://app.dimensions.ai/details/publication/pub.1042649506
144 rdf:type schema:CreativeWork
145 https://doi.org/10.1021/jp010995n schema:sameAs https://app.dimensions.ai/details/publication/pub.1056046038
146 rdf:type schema:CreativeWork
147 https://doi.org/10.1063/1.111781 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057659340
148 rdf:type schema:CreativeWork
149 https://doi.org/10.1063/1.122256 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057686419
150 rdf:type schema:CreativeWork
151 https://doi.org/10.1063/1.1378334 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057700722
152 rdf:type schema:CreativeWork
153 https://doi.org/10.1063/1.1555680 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057719180
154 rdf:type schema:CreativeWork
155 https://doi.org/10.1063/1.1604958 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057724999
156 rdf:type schema:CreativeWork
157 https://doi.org/10.1063/1.1760228 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057816057
158 rdf:type schema:CreativeWork
159 https://doi.org/10.1063/1.1790072 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057822307
160 rdf:type schema:CreativeWork
161 https://doi.org/10.1063/1.2816251 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057874610
162 rdf:type schema:CreativeWork
163 https://doi.org/10.1063/1.356432 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057975544
164 rdf:type schema:CreativeWork
165 https://doi.org/10.1080/00222348.2016.1153402 schema:sameAs https://app.dimensions.ai/details/publication/pub.1058273821
166 rdf:type schema:CreativeWork
167 https://doi.org/10.1088/0268-1242/18/8/312 schema:sameAs https://app.dimensions.ai/details/publication/pub.1026935631
168 rdf:type schema:CreativeWork
169 https://doi.org/10.1103/physrevb.36.3344 schema:sameAs https://app.dimensions.ai/details/publication/pub.1060543685
170 rdf:type schema:CreativeWork
171 https://doi.org/10.1103/physrevlett.82.197 schema:sameAs https://app.dimensions.ai/details/publication/pub.1060819057
172 rdf:type schema:CreativeWork
173 https://doi.org/10.1109/16.791997 schema:sameAs https://app.dimensions.ai/details/publication/pub.1061096688
174 rdf:type schema:CreativeWork
175 https://www.grid.ac/institutes/grid.12574.35 schema:alternateName Tunis El Manar University
176 schema:name Faculty of Science, Manar University, 2092, Tunis, Tunisia
177 Laboratoire de photovoltaïque, Centre de Recherches et des Technologies de l’Energie, Borj Cedria, B.P N°95, 2050, Hammam Lif, Tunisia
178 rdf:type schema:Organization
179 https://www.grid.ac/institutes/grid.425534.1 schema:alternateName National Research Foundation
180 schema:name Nanoenergy for Sustainable Development in Africa (NESDAF), Material Research Department, iThemba LABS-National Research Foundation, 1 Old Faure Road,, P.O. Box 722, 7129, Somerset West, Western Cape Province, South Africa
181 UNESCO UNISA Africa Chair in Nanosciences and Nanotechnology, College of Graduate Studies, University of South Africa, Pretoria, South Africa
182 rdf:type schema:Organization
183 https://www.grid.ac/institutes/grid.463173.4 schema:alternateName Research and Technology Center of Energy
184 schema:name Laboratoire de photovoltaïque, Centre de Recherches et des Technologies de l’Energie, Borj Cedria, B.P N°95, 2050, Hammam Lif, Tunisia
185 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...