Modulation of Sn concentration in ZnO nanorod array: intensification on the conductivity and humidity sensing properties View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2018-07

AUTHORS

A. S. Ismail, M. H. Mamat, I. B. Shameem Banu, M. F. Malek, M. M. Yusoff, R. Mohamed, W. R. W. Ahmad, M. A. R. Abdullah, N. D. Md. Sin, A. B. Suriani, M. K. Ahmad, M. Rusop

ABSTRACT

Tin (Sn)-doped zinc oxide (ZnO) nanorod arrays (TZO) were synthesized onto aluminum-doped ZnO-coated glass substrate via a facile sonicated sol–gel immersion method for humidity sensor applications. These nanorod arrays were grown at different Sn concentrations ranging from 0.6 to 3 at.%. X-ray diffraction patterns showed that the deposited TZO arrays exhibited a wurtzite structure. The stress/strain condition of the ZnO film metamorphosed from tensile strain/compressive stress to compressive strain/tensile stress when the Sn concentrations increased. Results indicated that 1 at.% Sn doping of TZO, which has the lowest tensile stress of 0.14 GPa, generated the highest conductivity of 1.31 S cm−1. In addition, 1 at.% Sn doping of TZO possessed superior sensitivity to a humidity of 3.36. These results revealed that the optimum performance of a humidity-sensing device can be obtained mainly by controlling the amount of extrinsic element in a ZnO film. More... »

PAGES

12076-12088

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s10854-018-9314-7

DOI

http://dx.doi.org/10.1007/s10854-018-9314-7

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1104137538


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