Effect of Li+ co-doping on structural and luminescence properties of Mn4+ activated magnesium titanate films View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2018-04-26

AUTHORS

L. Borkovska, L. Khomenkova, I. Markevich, M. Osipyonok, T. Stara, O. Gudymenko, V. Kladko, M. Baran, S. Lavoryk, X. Portier, T. Kryshtab

ABSTRACT

The effect of Li+ co-doping on crystal phase formation and photoluminescence (PL) of Mn4+ activated magnesium titanate films produced by a solid state reaction method at different temperatures (800–1200 °C) has been investigated by using X-ray diffraction (XRD), diffuse reflectance and PL spectroscopy. The chemical composition of sintered films was estimated by energy dispersive X-ray spectroscopy. The concentration of Mn impurity estimated by Electron spin resonance was about 5 × 1016 cm−3. The XRD study of the annealed films revealed several magnesium titanate crystal phases, such as Mg2TiO4, MgTiO3 and MgTi2O5. The contribution of each phase depended strongly on the annealing temperature and the presence of Li+ additive. Furthermore, Li+ co-doping facilitated the formation of both MgTiO3 and Mg2TiO4 phases, especially at lower annealing temperatures. The PL spectra showed two bands centered at 660 and 710 nm and ascribed to the 2E → 4A2 spin-forbidden transition of the Mn4+ ion in the Mg2TiO4 and MgTiO3, respectively. In Li co-doped films, the integrated intensity of Mn4+ luminescence was found several times stronger compared to Li-undoped films that was ascribed mainly to flux effect of lithium. More... »

PAGES

15613-15620

References to SciGraph publications

  • 2014-10-01. Red phosphor converts white LEDs in NATURE PHOTONICS
  • 1997-10. Spinel solid solutions in the systems MgAl2O4–ZnAl2O4 and MgAl2O4–Mg2TiO4 in JOURNAL OF MATERIALS RESEARCH
  • Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1007/s10854-018-9153-6

    DOI

    http://dx.doi.org/10.1007/s10854-018-9153-6

    DIMENSIONS

    https://app.dimensions.ai/details/publication/pub.1103667290


    Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
    Incoming Citations Browse incoming citations for this publication using opencitations.net

    JSON-LD is the canonical representation for SciGraph data.

    TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

    [
      {
        "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
        "about": [
          {
            "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
            "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
            "name": "Engineering", 
            "type": "DefinedTerm"
          }, 
          {
            "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
            "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
            "name": "Materials Engineering", 
            "type": "DefinedTerm"
          }
        ], 
        "author": [
          {
            "affiliation": {
              "alternateName": "V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, 45 Pr. Nauky, 03028, Kyiv, Ukraine", 
              "id": "http://www.grid.ac/institutes/grid.466789.2", 
              "name": [
                "V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, 45 Pr. Nauky, 03028, Kyiv, Ukraine"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Borkovska", 
            "givenName": "L.", 
            "id": "sg:person.013626725361.24", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013626725361.24"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, 45 Pr. Nauky, 03028, Kyiv, Ukraine", 
              "id": "http://www.grid.ac/institutes/grid.466789.2", 
              "name": [
                "V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, 45 Pr. Nauky, 03028, Kyiv, Ukraine"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Khomenkova", 
            "givenName": "L.", 
            "id": "sg:person.0777143227.34", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0777143227.34"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, 45 Pr. Nauky, 03028, Kyiv, Ukraine", 
              "id": "http://www.grid.ac/institutes/grid.466789.2", 
              "name": [
                "V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, 45 Pr. Nauky, 03028, Kyiv, Ukraine"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Markevich", 
            "givenName": "I.", 
            "id": "sg:person.010752505247.85", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010752505247.85"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, 45 Pr. Nauky, 03028, Kyiv, Ukraine", 
              "id": "http://www.grid.ac/institutes/grid.466789.2", 
              "name": [
                "V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, 45 Pr. Nauky, 03028, Kyiv, Ukraine"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Osipyonok", 
            "givenName": "M.", 
            "id": "sg:person.011276025223.27", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011276025223.27"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, 45 Pr. Nauky, 03028, Kyiv, Ukraine", 
              "id": "http://www.grid.ac/institutes/grid.466789.2", 
              "name": [
                "V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, 45 Pr. Nauky, 03028, Kyiv, Ukraine"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Stara", 
            "givenName": "T.", 
            "id": "sg:person.0645235424.43", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0645235424.43"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, 45 Pr. Nauky, 03028, Kyiv, Ukraine", 
              "id": "http://www.grid.ac/institutes/grid.466789.2", 
              "name": [
                "V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, 45 Pr. Nauky, 03028, Kyiv, Ukraine"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Gudymenko", 
            "givenName": "O.", 
            "id": "sg:person.014650276213.49", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014650276213.49"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, 45 Pr. Nauky, 03028, Kyiv, Ukraine", 
              "id": "http://www.grid.ac/institutes/grid.466789.2", 
              "name": [
                "V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, 45 Pr. Nauky, 03028, Kyiv, Ukraine"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Kladko", 
            "givenName": "V.", 
            "id": "sg:person.01325326676.48", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01325326676.48"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, 45 Pr. Nauky, 03028, Kyiv, Ukraine", 
              "id": "http://www.grid.ac/institutes/grid.466789.2", 
              "name": [
                "V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, 45 Pr. Nauky, 03028, Kyiv, Ukraine"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Baran", 
            "givenName": "M.", 
            "id": "sg:person.013151331047.80", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013151331047.80"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "NanoMedTech LLC, 68 Antonovycha Str., 03680, Kyiv, Ukraine", 
              "id": "http://www.grid.ac/institutes/None", 
              "name": [
                "V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, 45 Pr. Nauky, 03028, Kyiv, Ukraine", 
                "NanoMedTech LLC, 68 Antonovycha Str., 03680, Kyiv, Ukraine"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Lavoryk", 
            "givenName": "S.", 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "CIMAP, Normandie Univ, ENSICAEN, UNICAEN, CEA, CNRS, 6 Blvd. Mar\u00e9chal Juin, 14050, Caen, France", 
              "id": "http://www.grid.ac/institutes/grid.462794.a", 
              "name": [
                "CIMAP, Normandie Univ, ENSICAEN, UNICAEN, CEA, CNRS, 6 Blvd. Mar\u00e9chal Juin, 14050, Caen, France"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Portier", 
            "givenName": "X.", 
            "id": "sg:person.0771525660.41", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0771525660.41"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "Instituto Polit\u00e9cnico Nacional \u2013 ESFM, Av. IPN, Ed.9, U.P.A.L.M., 07738, Mexico City, Mexico", 
              "id": "http://www.grid.ac/institutes/grid.418275.d", 
              "name": [
                "Instituto Polit\u00e9cnico Nacional \u2013 ESFM, Av. IPN, Ed.9, U.P.A.L.M., 07738, Mexico City, Mexico"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Kryshtab", 
            "givenName": "T.", 
            "id": "sg:person.016355052521.25", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016355052521.25"
            ], 
            "type": "Person"
          }
        ], 
        "citation": [
          {
            "id": "sg:pub.10.1557/jmr.1997.0343", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1007943919", 
              "https://doi.org/10.1557/jmr.1997.0343"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "sg:pub.10.1038/nphoton.2014.221", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1006737351", 
              "https://doi.org/10.1038/nphoton.2014.221"
            ], 
            "type": "CreativeWork"
          }
        ], 
        "datePublished": "2018-04-26", 
        "datePublishedReg": "2018-04-26", 
        "description": "The effect of Li+ co-doping on crystal phase formation and photoluminescence (PL) of Mn4+ activated magnesium titanate films produced by a solid state reaction method at different temperatures (800\u20131200\u00a0\u00b0C) has been investigated by using X-ray diffraction (XRD), diffuse reflectance and PL spectroscopy. The chemical composition of sintered films was estimated by energy dispersive X-ray spectroscopy. The concentration of Mn impurity estimated by Electron spin resonance was about 5\u00a0\u00d7\u00a01016 cm\u22123. The XRD study of the annealed films revealed several magnesium titanate crystal phases, such as Mg2TiO4, MgTiO3 and MgTi2O5. The contribution of each phase depended strongly on the annealing temperature and the presence of Li+ additive. Furthermore, Li+ co-doping facilitated the formation of both MgTiO3 and Mg2TiO4 phases, especially at lower annealing temperatures. The PL spectra showed two bands centered at 660 and 710\u00a0nm and ascribed to the 2E\u00a0\u2192\u00a04A2 spin-forbidden transition of the Mn4+ ion in the Mg2TiO4 and MgTiO3, respectively. In Li co-doped films, the integrated intensity of Mn4+ luminescence was found several times stronger compared to Li-undoped films that was ascribed mainly to flux effect of lithium.", 
        "genre": "article", 
        "id": "sg:pub.10.1007/s10854-018-9153-6", 
        "isAccessibleForFree": false, 
        "isPartOf": [
          {
            "id": "sg:journal.1136825", 
            "issn": [
              "0957-4522", 
              "1573-482X"
            ], 
            "name": "Journal of Materials Science: Materials in Electronics", 
            "publisher": "Springer Nature", 
            "type": "Periodical"
          }, 
          {
            "issueNumber": "18", 
            "type": "PublicationIssue"
          }, 
          {
            "type": "PublicationVolume", 
            "volumeNumber": "29"
          }
        ], 
        "keywords": [
          "X-ray diffraction", 
          "energy dispersive X-ray spectroscopy", 
          "dispersive X-ray spectroscopy", 
          "X-ray spectroscopy", 
          "crystal phase formation", 
          "titanate films", 
          "annealing temperature", 
          "solid-state reaction method", 
          "electron spin resonance", 
          "co-doped films", 
          "diffuse reflectance", 
          "luminescence properties", 
          "state reaction method", 
          "PL spectroscopy", 
          "XRD studies", 
          "crystal phase", 
          "low annealing temperature", 
          "spin-forbidden transitions", 
          "sintered films", 
          "spin resonance", 
          "Mg2TiO4 phase", 
          "Mn4", 
          "chemical composition", 
          "reaction method", 
          "spectroscopy", 
          "PL spectra", 
          "films", 
          "phase formation", 
          "MgTiO3", 
          "photoluminescence", 
          "different temperatures", 
          "Mg2TiO4", 
          "temperature", 
          "diffraction", 
          "ions", 
          "luminescence", 
          "formation", 
          "lithium", 
          "phase", 
          "Mn impurities", 
          "impurities", 
          "spectra", 
          "properties", 
          "resonance", 
          "composition", 
          "reflectance", 
          "concentration", 
          "band", 
          "presence", 
          "effect", 
          "transition", 
          "effects of lithium", 
          "method", 
          "intensity", 
          "time", 
          "contribution", 
          "study"
        ], 
        "name": "Effect of Li+ co-doping on structural and luminescence properties of Mn4+ activated magnesium titanate films", 
        "pagination": "15613-15620", 
        "productId": [
          {
            "name": "dimensions_id", 
            "type": "PropertyValue", 
            "value": [
              "pub.1103667290"
            ]
          }, 
          {
            "name": "doi", 
            "type": "PropertyValue", 
            "value": [
              "10.1007/s10854-018-9153-6"
            ]
          }
        ], 
        "sameAs": [
          "https://doi.org/10.1007/s10854-018-9153-6", 
          "https://app.dimensions.ai/details/publication/pub.1103667290"
        ], 
        "sdDataset": "articles", 
        "sdDatePublished": "2022-10-01T06:45", 
        "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
        "sdPublisher": {
          "name": "Springer Nature - SN SciGraph project", 
          "type": "Organization"
        }, 
        "sdSource": "s3://com-springernature-scigraph/baseset/20221001/entities/gbq_results/article/article_786.jsonl", 
        "type": "ScholarlyArticle", 
        "url": "https://doi.org/10.1007/s10854-018-9153-6"
      }
    ]
     

    Download the RDF metadata as:  json-ld nt turtle xml License info

    HOW TO GET THIS DATA PROGRAMMATICALLY:

    JSON-LD is a popular format for linked data which is fully compatible with JSON.

    curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1007/s10854-018-9153-6'

    N-Triples is a line-based linked data format ideal for batch operations.

    curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1007/s10854-018-9153-6'

    Turtle is a human-readable linked data format.

    curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1007/s10854-018-9153-6'

    RDF/XML is a standard XML format for linked data.

    curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1007/s10854-018-9153-6'


     

    This table displays all metadata directly associated to this object as RDF triples.

    201 TRIPLES      21 PREDICATES      83 URIs      73 LITERALS      6 BLANK NODES

    Subject Predicate Object
    1 sg:pub.10.1007/s10854-018-9153-6 schema:about anzsrc-for:09
    2 anzsrc-for:0912
    3 schema:author N5c2ffcc8b5364894b020fc419b57b420
    4 schema:citation sg:pub.10.1038/nphoton.2014.221
    5 sg:pub.10.1557/jmr.1997.0343
    6 schema:datePublished 2018-04-26
    7 schema:datePublishedReg 2018-04-26
    8 schema:description The effect of Li+ co-doping on crystal phase formation and photoluminescence (PL) of Mn4+ activated magnesium titanate films produced by a solid state reaction method at different temperatures (800–1200 °C) has been investigated by using X-ray diffraction (XRD), diffuse reflectance and PL spectroscopy. The chemical composition of sintered films was estimated by energy dispersive X-ray spectroscopy. The concentration of Mn impurity estimated by Electron spin resonance was about 5 × 1016 cm−3. The XRD study of the annealed films revealed several magnesium titanate crystal phases, such as Mg2TiO4, MgTiO3 and MgTi2O5. The contribution of each phase depended strongly on the annealing temperature and the presence of Li+ additive. Furthermore, Li+ co-doping facilitated the formation of both MgTiO3 and Mg2TiO4 phases, especially at lower annealing temperatures. The PL spectra showed two bands centered at 660 and 710 nm and ascribed to the 2E → 4A2 spin-forbidden transition of the Mn4+ ion in the Mg2TiO4 and MgTiO3, respectively. In Li co-doped films, the integrated intensity of Mn4+ luminescence was found several times stronger compared to Li-undoped films that was ascribed mainly to flux effect of lithium.
    9 schema:genre article
    10 schema:isAccessibleForFree false
    11 schema:isPartOf N5b984850743a4a76bda92739343727bf
    12 Nfbd5265e3c8344679470cfb486982bd4
    13 sg:journal.1136825
    14 schema:keywords Mg2TiO4
    15 Mg2TiO4 phase
    16 MgTiO3
    17 Mn impurities
    18 Mn4
    19 PL spectra
    20 PL spectroscopy
    21 X-ray diffraction
    22 X-ray spectroscopy
    23 XRD studies
    24 annealing temperature
    25 band
    26 chemical composition
    27 co-doped films
    28 composition
    29 concentration
    30 contribution
    31 crystal phase
    32 crystal phase formation
    33 different temperatures
    34 diffraction
    35 diffuse reflectance
    36 dispersive X-ray spectroscopy
    37 effect
    38 effects of lithium
    39 electron spin resonance
    40 energy dispersive X-ray spectroscopy
    41 films
    42 formation
    43 impurities
    44 intensity
    45 ions
    46 lithium
    47 low annealing temperature
    48 luminescence
    49 luminescence properties
    50 method
    51 phase
    52 phase formation
    53 photoluminescence
    54 presence
    55 properties
    56 reaction method
    57 reflectance
    58 resonance
    59 sintered films
    60 solid-state reaction method
    61 spectra
    62 spectroscopy
    63 spin resonance
    64 spin-forbidden transitions
    65 state reaction method
    66 study
    67 temperature
    68 time
    69 titanate films
    70 transition
    71 schema:name Effect of Li+ co-doping on structural and luminescence properties of Mn4+ activated magnesium titanate films
    72 schema:pagination 15613-15620
    73 schema:productId N253108e8a5774a689ad70f8f7d37e66f
    74 N47ff634d28304724bde61b65ecfa162a
    75 schema:sameAs https://app.dimensions.ai/details/publication/pub.1103667290
    76 https://doi.org/10.1007/s10854-018-9153-6
    77 schema:sdDatePublished 2022-10-01T06:45
    78 schema:sdLicense https://scigraph.springernature.com/explorer/license/
    79 schema:sdPublisher N79df28f8cf674f729c5318e14f2476c7
    80 schema:url https://doi.org/10.1007/s10854-018-9153-6
    81 sgo:license sg:explorer/license/
    82 sgo:sdDataset articles
    83 rdf:type schema:ScholarlyArticle
    84 N15246d22183d4f18b8956f2a4f4ba0b3 rdf:first sg:person.014650276213.49
    85 rdf:rest Nc65ca195d3b34278abe0c94423b6a964
    86 N253108e8a5774a689ad70f8f7d37e66f schema:name dimensions_id
    87 schema:value pub.1103667290
    88 rdf:type schema:PropertyValue
    89 N47ff634d28304724bde61b65ecfa162a schema:name doi
    90 schema:value 10.1007/s10854-018-9153-6
    91 rdf:type schema:PropertyValue
    92 N4f6824fdb23d49e7987aae61dfa1eb08 schema:affiliation grid-institutes:None
    93 schema:familyName Lavoryk
    94 schema:givenName S.
    95 rdf:type schema:Person
    96 N59340058f7784d93946962927bedf61f rdf:first sg:person.0645235424.43
    97 rdf:rest N15246d22183d4f18b8956f2a4f4ba0b3
    98 N5b984850743a4a76bda92739343727bf schema:issueNumber 18
    99 rdf:type schema:PublicationIssue
    100 N5c2ffcc8b5364894b020fc419b57b420 rdf:first sg:person.013626725361.24
    101 rdf:rest N880c2fd4fdad45a69aba8e220c79966e
    102 N60b64096babf44ecb6d4de558987a93c rdf:first sg:person.013151331047.80
    103 rdf:rest Nc27cde7c7879461cbb3c1a1a0904b560
    104 N79df28f8cf674f729c5318e14f2476c7 schema:name Springer Nature - SN SciGraph project
    105 rdf:type schema:Organization
    106 N7e0009e00f86463baee9f396f48af35a rdf:first sg:person.016355052521.25
    107 rdf:rest rdf:nil
    108 N83246d6ec42f41f18fe9ca3f6b8f425b rdf:first sg:person.010752505247.85
    109 rdf:rest N9cf2418c197f4e5f834612fa0f492ee7
    110 N880c2fd4fdad45a69aba8e220c79966e rdf:first sg:person.0777143227.34
    111 rdf:rest N83246d6ec42f41f18fe9ca3f6b8f425b
    112 N9cf2418c197f4e5f834612fa0f492ee7 rdf:first sg:person.011276025223.27
    113 rdf:rest N59340058f7784d93946962927bedf61f
    114 Nc27cde7c7879461cbb3c1a1a0904b560 rdf:first N4f6824fdb23d49e7987aae61dfa1eb08
    115 rdf:rest Ned81a9e8e2834cfabcf582c625230502
    116 Nc65ca195d3b34278abe0c94423b6a964 rdf:first sg:person.01325326676.48
    117 rdf:rest N60b64096babf44ecb6d4de558987a93c
    118 Ned81a9e8e2834cfabcf582c625230502 rdf:first sg:person.0771525660.41
    119 rdf:rest N7e0009e00f86463baee9f396f48af35a
    120 Nfbd5265e3c8344679470cfb486982bd4 schema:volumeNumber 29
    121 rdf:type schema:PublicationVolume
    122 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
    123 schema:name Engineering
    124 rdf:type schema:DefinedTerm
    125 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
    126 schema:name Materials Engineering
    127 rdf:type schema:DefinedTerm
    128 sg:journal.1136825 schema:issn 0957-4522
    129 1573-482X
    130 schema:name Journal of Materials Science: Materials in Electronics
    131 schema:publisher Springer Nature
    132 rdf:type schema:Periodical
    133 sg:person.010752505247.85 schema:affiliation grid-institutes:grid.466789.2
    134 schema:familyName Markevich
    135 schema:givenName I.
    136 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010752505247.85
    137 rdf:type schema:Person
    138 sg:person.011276025223.27 schema:affiliation grid-institutes:grid.466789.2
    139 schema:familyName Osipyonok
    140 schema:givenName M.
    141 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011276025223.27
    142 rdf:type schema:Person
    143 sg:person.013151331047.80 schema:affiliation grid-institutes:grid.466789.2
    144 schema:familyName Baran
    145 schema:givenName M.
    146 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013151331047.80
    147 rdf:type schema:Person
    148 sg:person.01325326676.48 schema:affiliation grid-institutes:grid.466789.2
    149 schema:familyName Kladko
    150 schema:givenName V.
    151 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01325326676.48
    152 rdf:type schema:Person
    153 sg:person.013626725361.24 schema:affiliation grid-institutes:grid.466789.2
    154 schema:familyName Borkovska
    155 schema:givenName L.
    156 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013626725361.24
    157 rdf:type schema:Person
    158 sg:person.014650276213.49 schema:affiliation grid-institutes:grid.466789.2
    159 schema:familyName Gudymenko
    160 schema:givenName O.
    161 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014650276213.49
    162 rdf:type schema:Person
    163 sg:person.016355052521.25 schema:affiliation grid-institutes:grid.418275.d
    164 schema:familyName Kryshtab
    165 schema:givenName T.
    166 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016355052521.25
    167 rdf:type schema:Person
    168 sg:person.0645235424.43 schema:affiliation grid-institutes:grid.466789.2
    169 schema:familyName Stara
    170 schema:givenName T.
    171 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0645235424.43
    172 rdf:type schema:Person
    173 sg:person.0771525660.41 schema:affiliation grid-institutes:grid.462794.a
    174 schema:familyName Portier
    175 schema:givenName X.
    176 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0771525660.41
    177 rdf:type schema:Person
    178 sg:person.0777143227.34 schema:affiliation grid-institutes:grid.466789.2
    179 schema:familyName Khomenkova
    180 schema:givenName L.
    181 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0777143227.34
    182 rdf:type schema:Person
    183 sg:pub.10.1038/nphoton.2014.221 schema:sameAs https://app.dimensions.ai/details/publication/pub.1006737351
    184 https://doi.org/10.1038/nphoton.2014.221
    185 rdf:type schema:CreativeWork
    186 sg:pub.10.1557/jmr.1997.0343 schema:sameAs https://app.dimensions.ai/details/publication/pub.1007943919
    187 https://doi.org/10.1557/jmr.1997.0343
    188 rdf:type schema:CreativeWork
    189 grid-institutes:None schema:alternateName NanoMedTech LLC, 68 Antonovycha Str., 03680, Kyiv, Ukraine
    190 schema:name NanoMedTech LLC, 68 Antonovycha Str., 03680, Kyiv, Ukraine
    191 V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, 45 Pr. Nauky, 03028, Kyiv, Ukraine
    192 rdf:type schema:Organization
    193 grid-institutes:grid.418275.d schema:alternateName Instituto Politécnico Nacional – ESFM, Av. IPN, Ed.9, U.P.A.L.M., 07738, Mexico City, Mexico
    194 schema:name Instituto Politécnico Nacional – ESFM, Av. IPN, Ed.9, U.P.A.L.M., 07738, Mexico City, Mexico
    195 rdf:type schema:Organization
    196 grid-institutes:grid.462794.a schema:alternateName CIMAP, Normandie Univ, ENSICAEN, UNICAEN, CEA, CNRS, 6 Blvd. Maréchal Juin, 14050, Caen, France
    197 schema:name CIMAP, Normandie Univ, ENSICAEN, UNICAEN, CEA, CNRS, 6 Blvd. Maréchal Juin, 14050, Caen, France
    198 rdf:type schema:Organization
    199 grid-institutes:grid.466789.2 schema:alternateName V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, 45 Pr. Nauky, 03028, Kyiv, Ukraine
    200 schema:name V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, 45 Pr. Nauky, 03028, Kyiv, Ukraine
    201 rdf:type schema:Organization
     




    Preview window. Press ESC to close (or click here)


    ...