Double p-SiOx layers to improve the efficiency of p–i–n a-SiGe:H thin film solar cells View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2019-02

AUTHORS

Xun Sun, Yijian Liu, Zhongli Li, Huey-Liang Hwang

ABSTRACT

In this work, p–i–n hydrogenated amorphous silicon germanium (a-SiGe:H) thin film solar cells were fabricated by using double p-type silicon oxide (p-SiOx) layers, and the power conversion efficiency (PCE) was increased from 7.79 to 9.10%. The optoelectronic properties and functions of p-SiOx layer in a-SiGe:H cells were measured and discussed. A window layer (~ 20 nm) was deposited and characterized to determine the optimal single p-SiOx layer parameters. After that, an ultra-thin contact layer (~ 4 nm) of p-SiOx was deposited in front of the window layer. Through comparative analyses between single and double p-SiOx layers, the performance of the device has greatly improved in open-circuit voltage (Voc), fill factor (FF) and short-circuit current density (Jsc). The optimization of interface contact between top transparent conductive oxide (TCO) and p-layer effectively improves the device efficiency. Finally, a-SiGe:H solar cell with high Voc = 750 mV, FF = 68.36% and Jsc = 17.75 mA/cm2 were fabricated successfully. A high efficiency of 9.10% has been achieved by double p-SiOx layers for a-SiGe:H thin film solar cell. More... »

PAGES

1993-1997

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s10854-018-0470-6

DOI

http://dx.doi.org/10.1007/s10854-018-0470-6

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1110716717


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Shanghai Jiao Tong University", 
          "id": "https://www.grid.ac/institutes/grid.16821.3c", 
          "name": [
            "Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Department of Micro/Nano Electronics, School of Electronics, Information and Electrical Engineering, Shanghai Jiao Tong University, 800 Dongchuan Road, 200240, Shanghai, China"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Sun", 
        "givenName": "Xun", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Shanghai Jiao Tong University", 
          "id": "https://www.grid.ac/institutes/grid.16821.3c", 
          "name": [
            "Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Department of Micro/Nano Electronics, School of Electronics, Information and Electrical Engineering, Shanghai Jiao Tong University, 800 Dongchuan Road, 200240, Shanghai, China"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Liu", 
        "givenName": "Yijian", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Shanghai Jiao Tong University", 
          "id": "https://www.grid.ac/institutes/grid.16821.3c", 
          "name": [
            "Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Department of Micro/Nano Electronics, School of Electronics, Information and Electrical Engineering, Shanghai Jiao Tong University, 800 Dongchuan Road, 200240, Shanghai, China"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Li", 
        "givenName": "Zhongli", 
        "id": "sg:person.012240024121.10", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012240024121.10"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "National Tsing Hua University", 
          "id": "https://www.grid.ac/institutes/grid.38348.34", 
          "name": [
            "Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Department of Micro/Nano Electronics, School of Electronics, Information and Electrical Engineering, Shanghai Jiao Tong University, 800 Dongchuan Road, 200240, Shanghai, China", 
            "Centre for Nanotechnology, Materials Science, and Microsystems, National Tsing Hua University, No. 101, Section 2, Kuang-Fu Road, 30013, Hsinchu, Taiwan, ROC"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Hwang", 
        "givenName": "Huey-Liang", 
        "id": "sg:person.011767404762.72", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011767404762.72"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "https://doi.org/10.1016/j.jnoncrysol.2011.12.047", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1000274789"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.optmat.2015.11.012", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1001952512"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.mssp.2016.08.011", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1006546444"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.tsf.2013.01.059", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1019706628"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.sse.2012.01.002", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1022575369"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.tsf.2012.04.081", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1026696743"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/s40820-016-0124-2", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1033044916", 
          "https://doi.org/10.1007/s40820-016-0124-2"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/s40820-016-0124-2", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1033044916", 
          "https://doi.org/10.1007/s40820-016-0124-2"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/s40820-016-0124-2", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1033044916", 
          "https://doi.org/10.1007/s40820-016-0124-2"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/s40820-016-0124-2", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1033044916", 
          "https://doi.org/10.1007/s40820-016-0124-2"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/s0927-0248(02)00096-x", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1033558935"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.solmat.2014.05.008", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1035675384"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.tsf.2009.01.073", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1036129684"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.vacuum.2012.09.004", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1037363878"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.vacuum.2012.08.014", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1038909709"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.mssp.2015.10.006", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1039523057"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.mssp.2016.08.005", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1041146793"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.tsf.2013.11.102", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1043085025"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.tsf.2016.07.077", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1050647134"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.solmat.2014.10.020", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1051298438"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.343574", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057951658"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.98721", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1058138820"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.7567/jjap.51.10nb16", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1073836207"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1126/science.aai9081", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1083524250"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/s40820-017-0140-x", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1084040791", 
          "https://doi.org/10.1007/s40820-017-0140-x"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/s40820-017-0140-x", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1084040791", 
          "https://doi.org/10.1007/s40820-017-0140-x"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.jallcom.2017.05.026", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1085200179"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.tsf.2017.08.016", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1091144374"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.mssp.2017.08.016", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1092916932"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.jpowsour.2018.02.050", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1101208866"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.jallcom.2018.05.248", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1104142143"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/s41467-018-05531-8", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1105928867", 
          "https://doi.org/10.1038/s41467-018-05531-8"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2019-02", 
    "datePublishedReg": "2019-02-01", 
    "description": "In this work, p\u2013i\u2013n hydrogenated amorphous silicon germanium (a-SiGe:H) thin film solar cells were fabricated by using double p-type silicon oxide (p-SiOx) layers, and the power conversion efficiency (PCE) was increased from 7.79 to 9.10%. The optoelectronic properties and functions of p-SiOx layer in a-SiGe:H cells were measured and discussed. A window layer (~ 20 nm) was deposited and characterized to determine the optimal single p-SiOx layer parameters. After that, an ultra-thin contact layer (~ 4 nm) of p-SiOx was deposited in front of the window layer. Through comparative analyses between single and double p-SiOx layers, the performance of the device has greatly improved in open-circuit voltage (Voc), fill factor (FF) and short-circuit current density (Jsc). The optimization of interface contact between top transparent conductive oxide (TCO) and p-layer effectively improves the device efficiency. Finally, a-SiGe:H solar cell with high Voc = 750 mV, FF = 68.36% and Jsc = 17.75 mA/cm2 were fabricated successfully. A high efficiency of 9.10% has been achieved by double p-SiOx layers for a-SiGe:H thin film solar cell.", 
    "genre": "research_article", 
    "id": "sg:pub.10.1007/s10854-018-0470-6", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": false, 
    "isFundedItemOf": [
      {
        "id": "sg:grant.7182064", 
        "type": "MonetaryGrant"
      }
    ], 
    "isPartOf": [
      {
        "id": "sg:journal.1136825", 
        "issn": [
          "0957-4522", 
          "1573-482X"
        ], 
        "name": "Journal of Materials Science: Materials in Electronics", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "3", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "30"
      }
    ], 
    "name": "Double p-SiOx layers to improve the efficiency of p\u2013i\u2013n a-SiGe:H thin film solar cells", 
    "pagination": "1993-1997", 
    "productId": [
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "eec946ce7d4a485496a5b58e7dd20ff69732454a8ff3e161cbc64bee18663943"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1007/s10854-018-0470-6"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1110716717"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1007/s10854-018-0470-6", 
      "https://app.dimensions.ai/details/publication/pub.1110716717"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2019-04-11T10:19", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000348_0000000348/records_54319_00000002.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://link.springer.com/10.1007%2Fs10854-018-0470-6"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1007/s10854-018-0470-6'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1007/s10854-018-0470-6'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1007/s10854-018-0470-6'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1007/s10854-018-0470-6'


 

This table displays all metadata directly associated to this object as RDF triples.

173 TRIPLES      21 PREDICATES      55 URIs      19 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1007/s10854-018-0470-6 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author Nd604abd2a42b4a69bf6b294211e87d99
4 schema:citation sg:pub.10.1007/s40820-016-0124-2
5 sg:pub.10.1007/s40820-017-0140-x
6 sg:pub.10.1038/s41467-018-05531-8
7 https://doi.org/10.1016/j.jallcom.2017.05.026
8 https://doi.org/10.1016/j.jallcom.2018.05.248
9 https://doi.org/10.1016/j.jnoncrysol.2011.12.047
10 https://doi.org/10.1016/j.jpowsour.2018.02.050
11 https://doi.org/10.1016/j.mssp.2015.10.006
12 https://doi.org/10.1016/j.mssp.2016.08.005
13 https://doi.org/10.1016/j.mssp.2016.08.011
14 https://doi.org/10.1016/j.mssp.2017.08.016
15 https://doi.org/10.1016/j.optmat.2015.11.012
16 https://doi.org/10.1016/j.solmat.2014.05.008
17 https://doi.org/10.1016/j.solmat.2014.10.020
18 https://doi.org/10.1016/j.sse.2012.01.002
19 https://doi.org/10.1016/j.tsf.2009.01.073
20 https://doi.org/10.1016/j.tsf.2012.04.081
21 https://doi.org/10.1016/j.tsf.2013.01.059
22 https://doi.org/10.1016/j.tsf.2013.11.102
23 https://doi.org/10.1016/j.tsf.2016.07.077
24 https://doi.org/10.1016/j.tsf.2017.08.016
25 https://doi.org/10.1016/j.vacuum.2012.08.014
26 https://doi.org/10.1016/j.vacuum.2012.09.004
27 https://doi.org/10.1016/s0927-0248(02)00096-x
28 https://doi.org/10.1063/1.343574
29 https://doi.org/10.1063/1.98721
30 https://doi.org/10.1126/science.aai9081
31 https://doi.org/10.7567/jjap.51.10nb16
32 schema:datePublished 2019-02
33 schema:datePublishedReg 2019-02-01
34 schema:description In this work, p–i–n hydrogenated amorphous silicon germanium (a-SiGe:H) thin film solar cells were fabricated by using double p-type silicon oxide (p-SiOx) layers, and the power conversion efficiency (PCE) was increased from 7.79 to 9.10%. The optoelectronic properties and functions of p-SiOx layer in a-SiGe:H cells were measured and discussed. A window layer (~ 20 nm) was deposited and characterized to determine the optimal single p-SiOx layer parameters. After that, an ultra-thin contact layer (~ 4 nm) of p-SiOx was deposited in front of the window layer. Through comparative analyses between single and double p-SiOx layers, the performance of the device has greatly improved in open-circuit voltage (Voc), fill factor (FF) and short-circuit current density (Jsc). The optimization of interface contact between top transparent conductive oxide (TCO) and p-layer effectively improves the device efficiency. Finally, a-SiGe:H solar cell with high Voc = 750 mV, FF = 68.36% and Jsc = 17.75 mA/cm2 were fabricated successfully. A high efficiency of 9.10% has been achieved by double p-SiOx layers for a-SiGe:H thin film solar cell.
35 schema:genre research_article
36 schema:inLanguage en
37 schema:isAccessibleForFree false
38 schema:isPartOf N02cd50b1e5994f0d8bd6b219dae66429
39 N8b3b40d1983249f3aa12f41373644f40
40 sg:journal.1136825
41 schema:name Double p-SiOx layers to improve the efficiency of p–i–n a-SiGe:H thin film solar cells
42 schema:pagination 1993-1997
43 schema:productId N9eeaf2227dfb4b258dc18ff754aff50b
44 Na8d56bce4eb04cb69b0c3245fd89487b
45 Nade765d12f4f4e1b9c2e758bc5ceca39
46 schema:sameAs https://app.dimensions.ai/details/publication/pub.1110716717
47 https://doi.org/10.1007/s10854-018-0470-6
48 schema:sdDatePublished 2019-04-11T10:19
49 schema:sdLicense https://scigraph.springernature.com/explorer/license/
50 schema:sdPublisher Ndb95cf3282544a5abd9b03245eb43ac5
51 schema:url https://link.springer.com/10.1007%2Fs10854-018-0470-6
52 sgo:license sg:explorer/license/
53 sgo:sdDataset articles
54 rdf:type schema:ScholarlyArticle
55 N02cd50b1e5994f0d8bd6b219dae66429 schema:volumeNumber 30
56 rdf:type schema:PublicationVolume
57 N2b92b7f810bf406992a288aa166e9677 rdf:first sg:person.011767404762.72
58 rdf:rest rdf:nil
59 N4e3c295281e340b4b83881e1df4f6b55 schema:affiliation https://www.grid.ac/institutes/grid.16821.3c
60 schema:familyName Sun
61 schema:givenName Xun
62 rdf:type schema:Person
63 N59c5b146ebd2406a9f0d768ed7d6dc82 schema:affiliation https://www.grid.ac/institutes/grid.16821.3c
64 schema:familyName Liu
65 schema:givenName Yijian
66 rdf:type schema:Person
67 N7274a50ca1a746f8a55dcecd4833aa1b rdf:first sg:person.012240024121.10
68 rdf:rest N2b92b7f810bf406992a288aa166e9677
69 N8b3b40d1983249f3aa12f41373644f40 schema:issueNumber 3
70 rdf:type schema:PublicationIssue
71 N9eeaf2227dfb4b258dc18ff754aff50b schema:name readcube_id
72 schema:value eec946ce7d4a485496a5b58e7dd20ff69732454a8ff3e161cbc64bee18663943
73 rdf:type schema:PropertyValue
74 Na8d56bce4eb04cb69b0c3245fd89487b schema:name dimensions_id
75 schema:value pub.1110716717
76 rdf:type schema:PropertyValue
77 Nade765d12f4f4e1b9c2e758bc5ceca39 schema:name doi
78 schema:value 10.1007/s10854-018-0470-6
79 rdf:type schema:PropertyValue
80 Nd604abd2a42b4a69bf6b294211e87d99 rdf:first N4e3c295281e340b4b83881e1df4f6b55
81 rdf:rest Ne6f7b2fa11b24dd3906fa1e8a052a726
82 Ndb95cf3282544a5abd9b03245eb43ac5 schema:name Springer Nature - SN SciGraph project
83 rdf:type schema:Organization
84 Ne6f7b2fa11b24dd3906fa1e8a052a726 rdf:first N59c5b146ebd2406a9f0d768ed7d6dc82
85 rdf:rest N7274a50ca1a746f8a55dcecd4833aa1b
86 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
87 schema:name Engineering
88 rdf:type schema:DefinedTerm
89 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
90 schema:name Materials Engineering
91 rdf:type schema:DefinedTerm
92 sg:grant.7182064 http://pending.schema.org/fundedItem sg:pub.10.1007/s10854-018-0470-6
93 rdf:type schema:MonetaryGrant
94 sg:journal.1136825 schema:issn 0957-4522
95 1573-482X
96 schema:name Journal of Materials Science: Materials in Electronics
97 rdf:type schema:Periodical
98 sg:person.011767404762.72 schema:affiliation https://www.grid.ac/institutes/grid.38348.34
99 schema:familyName Hwang
100 schema:givenName Huey-Liang
101 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011767404762.72
102 rdf:type schema:Person
103 sg:person.012240024121.10 schema:affiliation https://www.grid.ac/institutes/grid.16821.3c
104 schema:familyName Li
105 schema:givenName Zhongli
106 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012240024121.10
107 rdf:type schema:Person
108 sg:pub.10.1007/s40820-016-0124-2 schema:sameAs https://app.dimensions.ai/details/publication/pub.1033044916
109 https://doi.org/10.1007/s40820-016-0124-2
110 rdf:type schema:CreativeWork
111 sg:pub.10.1007/s40820-017-0140-x schema:sameAs https://app.dimensions.ai/details/publication/pub.1084040791
112 https://doi.org/10.1007/s40820-017-0140-x
113 rdf:type schema:CreativeWork
114 sg:pub.10.1038/s41467-018-05531-8 schema:sameAs https://app.dimensions.ai/details/publication/pub.1105928867
115 https://doi.org/10.1038/s41467-018-05531-8
116 rdf:type schema:CreativeWork
117 https://doi.org/10.1016/j.jallcom.2017.05.026 schema:sameAs https://app.dimensions.ai/details/publication/pub.1085200179
118 rdf:type schema:CreativeWork
119 https://doi.org/10.1016/j.jallcom.2018.05.248 schema:sameAs https://app.dimensions.ai/details/publication/pub.1104142143
120 rdf:type schema:CreativeWork
121 https://doi.org/10.1016/j.jnoncrysol.2011.12.047 schema:sameAs https://app.dimensions.ai/details/publication/pub.1000274789
122 rdf:type schema:CreativeWork
123 https://doi.org/10.1016/j.jpowsour.2018.02.050 schema:sameAs https://app.dimensions.ai/details/publication/pub.1101208866
124 rdf:type schema:CreativeWork
125 https://doi.org/10.1016/j.mssp.2015.10.006 schema:sameAs https://app.dimensions.ai/details/publication/pub.1039523057
126 rdf:type schema:CreativeWork
127 https://doi.org/10.1016/j.mssp.2016.08.005 schema:sameAs https://app.dimensions.ai/details/publication/pub.1041146793
128 rdf:type schema:CreativeWork
129 https://doi.org/10.1016/j.mssp.2016.08.011 schema:sameAs https://app.dimensions.ai/details/publication/pub.1006546444
130 rdf:type schema:CreativeWork
131 https://doi.org/10.1016/j.mssp.2017.08.016 schema:sameAs https://app.dimensions.ai/details/publication/pub.1092916932
132 rdf:type schema:CreativeWork
133 https://doi.org/10.1016/j.optmat.2015.11.012 schema:sameAs https://app.dimensions.ai/details/publication/pub.1001952512
134 rdf:type schema:CreativeWork
135 https://doi.org/10.1016/j.solmat.2014.05.008 schema:sameAs https://app.dimensions.ai/details/publication/pub.1035675384
136 rdf:type schema:CreativeWork
137 https://doi.org/10.1016/j.solmat.2014.10.020 schema:sameAs https://app.dimensions.ai/details/publication/pub.1051298438
138 rdf:type schema:CreativeWork
139 https://doi.org/10.1016/j.sse.2012.01.002 schema:sameAs https://app.dimensions.ai/details/publication/pub.1022575369
140 rdf:type schema:CreativeWork
141 https://doi.org/10.1016/j.tsf.2009.01.073 schema:sameAs https://app.dimensions.ai/details/publication/pub.1036129684
142 rdf:type schema:CreativeWork
143 https://doi.org/10.1016/j.tsf.2012.04.081 schema:sameAs https://app.dimensions.ai/details/publication/pub.1026696743
144 rdf:type schema:CreativeWork
145 https://doi.org/10.1016/j.tsf.2013.01.059 schema:sameAs https://app.dimensions.ai/details/publication/pub.1019706628
146 rdf:type schema:CreativeWork
147 https://doi.org/10.1016/j.tsf.2013.11.102 schema:sameAs https://app.dimensions.ai/details/publication/pub.1043085025
148 rdf:type schema:CreativeWork
149 https://doi.org/10.1016/j.tsf.2016.07.077 schema:sameAs https://app.dimensions.ai/details/publication/pub.1050647134
150 rdf:type schema:CreativeWork
151 https://doi.org/10.1016/j.tsf.2017.08.016 schema:sameAs https://app.dimensions.ai/details/publication/pub.1091144374
152 rdf:type schema:CreativeWork
153 https://doi.org/10.1016/j.vacuum.2012.08.014 schema:sameAs https://app.dimensions.ai/details/publication/pub.1038909709
154 rdf:type schema:CreativeWork
155 https://doi.org/10.1016/j.vacuum.2012.09.004 schema:sameAs https://app.dimensions.ai/details/publication/pub.1037363878
156 rdf:type schema:CreativeWork
157 https://doi.org/10.1016/s0927-0248(02)00096-x schema:sameAs https://app.dimensions.ai/details/publication/pub.1033558935
158 rdf:type schema:CreativeWork
159 https://doi.org/10.1063/1.343574 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057951658
160 rdf:type schema:CreativeWork
161 https://doi.org/10.1063/1.98721 schema:sameAs https://app.dimensions.ai/details/publication/pub.1058138820
162 rdf:type schema:CreativeWork
163 https://doi.org/10.1126/science.aai9081 schema:sameAs https://app.dimensions.ai/details/publication/pub.1083524250
164 rdf:type schema:CreativeWork
165 https://doi.org/10.7567/jjap.51.10nb16 schema:sameAs https://app.dimensions.ai/details/publication/pub.1073836207
166 rdf:type schema:CreativeWork
167 https://www.grid.ac/institutes/grid.16821.3c schema:alternateName Shanghai Jiao Tong University
168 schema:name Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Department of Micro/Nano Electronics, School of Electronics, Information and Electrical Engineering, Shanghai Jiao Tong University, 800 Dongchuan Road, 200240, Shanghai, China
169 rdf:type schema:Organization
170 https://www.grid.ac/institutes/grid.38348.34 schema:alternateName National Tsing Hua University
171 schema:name Centre for Nanotechnology, Materials Science, and Microsystems, National Tsing Hua University, No. 101, Section 2, Kuang-Fu Road, 30013, Hsinchu, Taiwan, ROC
172 Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Department of Micro/Nano Electronics, School of Electronics, Information and Electrical Engineering, Shanghai Jiao Tong University, 800 Dongchuan Road, 200240, Shanghai, China
173 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...