Thickness dependence of properties Ga-doped ZnO thin films deposited by magnetron sputtering View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2017-03

AUTHORS

H. Mahdhi, J. L. Gauffier, K. Djessas, Z. Ben Ayadi

ABSTRACT

In this work, we studied gallium doped zinc oxide (ZnO:Ga) thin films deposited by rf-magnetron sputtering at room temperature using gallium doped nanocrystalline powder synthesized by sol–gel method. The effect of the thickness, on the physical properties of the GZO thin films was analyzed. The influence of the thickness, on structure, surface morphologies, chemical atomic composition, electrical and optical properties was investigated by XRD, SEM, TEM, AFM, Hall measurement and UV Vis–NIR spectrophotometer, respectively. X-ray diffraction (XRD) results revealed the polycrystalline nature of the films with hexagonal wurtzite structure having preferential orientation along [002] direction normal to the substrate. The lowest resistivity obtained from electrical studies was 10−4 Ω cm. Optical transmittance measurement results show a good transparency within the visible wavelength range for all the films. More... »

PAGES

5021-5028

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http://scigraph.springernature.com/pub.10.1007/s10854-016-6158-x

DOI

http://dx.doi.org/10.1007/s10854-016-6158-x

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