Light induced charge transport property analysis of nanostructured ZnS based Schottky diode View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2016-06

AUTHORS

Arka Dey, Somnath Middya, Rajkumar Jana, Mrinmay Das, Joydeep Datta, Animesh Layek, Partha Pratim Ray

ABSTRACT

In this report we have investigated the light sensing behavior and also discussed the induced charge transport phenomena through the junction made by aluminium and hydrothermally derived zinc-sulfide (ZnS). In this regards the structural, optical and electrical characterization of ZnS was performed well. The optical band gap energy (=3.68 eV) estimated from optical spectra and room temperature conductivity (0.49 × 10−6 S cm−1) measured from current–voltage characteristic explores the inorganic semiconductor behavior of the synthesized material. Depending upon the work function, aluminium (=4.4 eV) was preferred as metal contact to develop a potential barrier within the junction to study the underneath mechanism of charge transport through metal/inorganic-semiconductor interface. Moreover we have fabricated the sandwich structure ITO/ZnS/Al junction to study the effect of incident light on charge transport phenomena and demonstrated the potential applicability of the synthesized material to over crown the research on inorganic nano-semiconductor. The everbound charge transport phenomena within the device was analyzed by thermoionic emission theory. In searching its performance within light sensing electronic device we have deliberated the mobility-lifetime product, diffusion length and density of states (DOS) near Fermi level very aptly. More... »

PAGES

6325-6335

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s10854-016-4567-5

DOI

http://dx.doi.org/10.1007/s10854-016-4567-5

DIMENSIONS

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39 schema:description In this report we have investigated the light sensing behavior and also discussed the induced charge transport phenomena through the junction made by aluminium and hydrothermally derived zinc-sulfide (ZnS). In this regards the structural, optical and electrical characterization of ZnS was performed well. The optical band gap energy (=3.68 eV) estimated from optical spectra and room temperature conductivity (0.49 × 10−6 S cm−1) measured from current–voltage characteristic explores the inorganic semiconductor behavior of the synthesized material. Depending upon the work function, aluminium (=4.4 eV) was preferred as metal contact to develop a potential barrier within the junction to study the underneath mechanism of charge transport through metal/inorganic-semiconductor interface. Moreover we have fabricated the sandwich structure ITO/ZnS/Al junction to study the effect of incident light on charge transport phenomena and demonstrated the potential applicability of the synthesized material to over crown the research on inorganic nano-semiconductor. The everbound charge transport phenomena within the device was analyzed by thermoionic emission theory. In searching its performance within light sensing electronic device we have deliberated the mobility-lifetime product, diffusion length and density of states (DOS) near Fermi level very aptly.
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