Investigation of dark current and differential resistance contributing mechanisms in type-II InAs/GaSb superlattice View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2016-01-28

AUTHORS

Ruiqin Peng, Shujie Jiao, Dongwei Jiang, Hongtao Li, Liancheng Zhao

ABSTRACT

The zero-bias resistance area (R0A) product is a primary figure-of-merit of infrared detector. The contributions of different dark current to R0A have been analyzed based on a long wavelength infrared type-II InAs/GaSb superlattice p-i-n photodiode. A dark current of 2.052 × 10−4 A cm−2 and a differential resistance-area of 32.314 Ω cm2 at zero bias voltage are achieved with a 100 % cutoff of 12.5 μm at 77 K. The temperature-dependence and bias-dependence of the dark currents are studied experimentally and correlated to the theory. At 77 K, by modeling the different reduced carrier concentration, the dominant mechanism of R0A can be varied from generation-recombination to tunneling. More... »

PAGES

4566-4570

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s10854-016-4332-9

DOI

http://dx.doi.org/10.1007/s10854-016-4332-9

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1000124744


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "School of Materials Science and Engineering, Harbin Institute of Technology, 150001, Harbin, People\u2019s Republic of China", 
          "id": "http://www.grid.ac/institutes/grid.19373.3f", 
          "name": [
            "School of Materials Science and Engineering, Harbin Institute of Technology, 150001, Harbin, People\u2019s Republic of China"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Peng", 
        "givenName": "Ruiqin", 
        "id": "sg:person.016316444455.84", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016316444455.84"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "School of Materials Science and Engineering, Harbin Institute of Technology, 150001, Harbin, People\u2019s Republic of China", 
          "id": "http://www.grid.ac/institutes/grid.19373.3f", 
          "name": [
            "School of Materials Science and Engineering, Harbin Institute of Technology, 150001, Harbin, People\u2019s Republic of China"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Jiao", 
        "givenName": "Shujie", 
        "id": "sg:person.01164243372.27", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01164243372.27"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "School of Materials Science and Engineering, Harbin Institute of Technology, 150001, Harbin, People\u2019s Republic of China", 
          "id": "http://www.grid.ac/institutes/grid.19373.3f", 
          "name": [
            "School of Materials Science and Engineering, Harbin Institute of Technology, 150001, Harbin, People\u2019s Republic of China"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Jiang", 
        "givenName": "Dongwei", 
        "id": "sg:person.014030553577.89", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014030553577.89"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "School of Materials Science and Engineering, Harbin Institute of Technology, 150001, Harbin, People\u2019s Republic of China", 
          "id": "http://www.grid.ac/institutes/grid.19373.3f", 
          "name": [
            "School of Materials Science and Engineering, Harbin Institute of Technology, 150001, Harbin, People\u2019s Republic of China"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Li", 
        "givenName": "Hongtao", 
        "id": "sg:person.013174645257.06", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013174645257.06"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "School of Materials Science and Engineering, Harbin Institute of Technology, 150001, Harbin, People\u2019s Republic of China", 
          "id": "http://www.grid.ac/institutes/grid.19373.3f", 
          "name": [
            "School of Materials Science and Engineering, Harbin Institute of Technology, 150001, Harbin, People\u2019s Republic of China"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Zhao", 
        "givenName": "Liancheng", 
        "id": "sg:person.014323674445.20", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014323674445.20"
        ], 
        "type": "Person"
      }
    ], 
    "datePublished": "2016-01-28", 
    "datePublishedReg": "2016-01-28", 
    "description": "The zero-bias resistance area (R0A) product is a primary figure-of-merit of infrared detector. The contributions of different dark current to R0A have been analyzed based on a long wavelength infrared type-II InAs/GaSb superlattice p-i-n photodiode. A dark current of 2.052\u00a0\u00d7\u00a010\u22124\u00a0A\u00a0cm\u22122 and a differential resistance-area of 32.314\u00a0\u03a9\u00a0cm2 at zero bias voltage are achieved with a 100\u00a0% cutoff of 12.5\u00a0\u03bcm at 77\u00a0K. The temperature-dependence and bias-dependence of the dark currents are studied experimentally and correlated to the theory. At 77\u00a0K, by modeling the different reduced carrier concentration, the dominant mechanism of R0A can be varied from generation-recombination to tunneling.", 
    "genre": "article", 
    "id": "sg:pub.10.1007/s10854-016-4332-9", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isFundedItemOf": [
      {
        "id": "sg:grant.7197382", 
        "type": "MonetaryGrant"
      }, 
      {
        "id": "sg:grant.8302685", 
        "type": "MonetaryGrant"
      }
    ], 
    "isPartOf": [
      {
        "id": "sg:journal.1136825", 
        "issn": [
          "0957-4522", 
          "1573-482X"
        ], 
        "name": "Journal of Materials Science: Materials in Electronics", 
        "publisher": "Springer Nature", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "5", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "27"
      }
    ], 
    "keywords": [
      "dark current", 
      "InAs/GaSb superlattices", 
      "zero-bias resistance area product", 
      "infrared detectors", 
      "longer wavelengths", 
      "superlattice p", 
      "bias voltage", 
      "carrier concentration", 
      "R0A", 
      "dominant mechanism", 
      "differential resistance", 
      "resistance area product", 
      "detector", 
      "wavelength", 
      "photodiodes", 
      "current", 
      "cm2", 
      "tunneling", 
      "superlattices", 
      "primary figure", 
      "voltage", 
      "cutoff", 
      "theory", 
      "area product", 
      "merits", 
      "contribution", 
      "mechanism", 
      "investigation", 
      "products", 
      "figures", 
      "types", 
      "concentration", 
      "resistance", 
      "InAs/GaSb superlattice p", 
      "GaSb superlattice p", 
      "GaSb superlattice"
    ], 
    "name": "Investigation of dark current and differential resistance contributing mechanisms in type-II InAs/GaSb superlattice", 
    "pagination": "4566-4570", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1000124744"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1007/s10854-016-4332-9"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1007/s10854-016-4332-9", 
      "https://app.dimensions.ai/details/publication/pub.1000124744"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-01-01T18:42", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220101/entities/gbq_results/article/article_711.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1007/s10854-016-4332-9"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1007/s10854-016-4332-9'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1007/s10854-016-4332-9'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1007/s10854-016-4332-9'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1007/s10854-016-4332-9'


 

This table displays all metadata directly associated to this object as RDF triples.

126 TRIPLES      21 PREDICATES      61 URIs      53 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1007/s10854-016-4332-9 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author Nf09f44c259744b3ba233eb87dac03c78
4 schema:datePublished 2016-01-28
5 schema:datePublishedReg 2016-01-28
6 schema:description The zero-bias resistance area (R0A) product is a primary figure-of-merit of infrared detector. The contributions of different dark current to R0A have been analyzed based on a long wavelength infrared type-II InAs/GaSb superlattice p-i-n photodiode. A dark current of 2.052 × 10−4 A cm−2 and a differential resistance-area of 32.314 Ω cm2 at zero bias voltage are achieved with a 100 % cutoff of 12.5 μm at 77 K. The temperature-dependence and bias-dependence of the dark currents are studied experimentally and correlated to the theory. At 77 K, by modeling the different reduced carrier concentration, the dominant mechanism of R0A can be varied from generation-recombination to tunneling.
7 schema:genre article
8 schema:inLanguage en
9 schema:isAccessibleForFree false
10 schema:isPartOf Nc2862ba9a64d44e6a6fd661217524b39
11 Nc9d2de83b25d4b4093ec9a0b291c2c3f
12 sg:journal.1136825
13 schema:keywords GaSb superlattice
14 GaSb superlattice p
15 InAs/GaSb superlattice p
16 InAs/GaSb superlattices
17 R0A
18 area product
19 bias voltage
20 carrier concentration
21 cm2
22 concentration
23 contribution
24 current
25 cutoff
26 dark current
27 detector
28 differential resistance
29 dominant mechanism
30 figures
31 infrared detectors
32 investigation
33 longer wavelengths
34 mechanism
35 merits
36 photodiodes
37 primary figure
38 products
39 resistance
40 resistance area product
41 superlattice p
42 superlattices
43 theory
44 tunneling
45 types
46 voltage
47 wavelength
48 zero-bias resistance area product
49 schema:name Investigation of dark current and differential resistance contributing mechanisms in type-II InAs/GaSb superlattice
50 schema:pagination 4566-4570
51 schema:productId N23fb5d2803d14aca9bfefd9455ccb75a
52 Nebf57389b79b48c399478337a1932fc8
53 schema:sameAs https://app.dimensions.ai/details/publication/pub.1000124744
54 https://doi.org/10.1007/s10854-016-4332-9
55 schema:sdDatePublished 2022-01-01T18:42
56 schema:sdLicense https://scigraph.springernature.com/explorer/license/
57 schema:sdPublisher N8778681ba45443b98f326c9f047101b0
58 schema:url https://doi.org/10.1007/s10854-016-4332-9
59 sgo:license sg:explorer/license/
60 sgo:sdDataset articles
61 rdf:type schema:ScholarlyArticle
62 N23fb5d2803d14aca9bfefd9455ccb75a schema:name dimensions_id
63 schema:value pub.1000124744
64 rdf:type schema:PropertyValue
65 N362cceefa4864fbcaa3991a46c44be23 rdf:first sg:person.013174645257.06
66 rdf:rest Ned9af48e66584435af3c4345867cd71f
67 N8778681ba45443b98f326c9f047101b0 schema:name Springer Nature - SN SciGraph project
68 rdf:type schema:Organization
69 Na1caedc8a59a479bb066ea2729529d3e rdf:first sg:person.01164243372.27
70 rdf:rest Nab0679ba46f445d0b89a09fe3a203c16
71 Nab0679ba46f445d0b89a09fe3a203c16 rdf:first sg:person.014030553577.89
72 rdf:rest N362cceefa4864fbcaa3991a46c44be23
73 Nc2862ba9a64d44e6a6fd661217524b39 schema:issueNumber 5
74 rdf:type schema:PublicationIssue
75 Nc9d2de83b25d4b4093ec9a0b291c2c3f schema:volumeNumber 27
76 rdf:type schema:PublicationVolume
77 Nebf57389b79b48c399478337a1932fc8 schema:name doi
78 schema:value 10.1007/s10854-016-4332-9
79 rdf:type schema:PropertyValue
80 Ned9af48e66584435af3c4345867cd71f rdf:first sg:person.014323674445.20
81 rdf:rest rdf:nil
82 Nf09f44c259744b3ba233eb87dac03c78 rdf:first sg:person.016316444455.84
83 rdf:rest Na1caedc8a59a479bb066ea2729529d3e
84 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
85 schema:name Engineering
86 rdf:type schema:DefinedTerm
87 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
88 schema:name Materials Engineering
89 rdf:type schema:DefinedTerm
90 sg:grant.7197382 http://pending.schema.org/fundedItem sg:pub.10.1007/s10854-016-4332-9
91 rdf:type schema:MonetaryGrant
92 sg:grant.8302685 http://pending.schema.org/fundedItem sg:pub.10.1007/s10854-016-4332-9
93 rdf:type schema:MonetaryGrant
94 sg:journal.1136825 schema:issn 0957-4522
95 1573-482X
96 schema:name Journal of Materials Science: Materials in Electronics
97 schema:publisher Springer Nature
98 rdf:type schema:Periodical
99 sg:person.01164243372.27 schema:affiliation grid-institutes:grid.19373.3f
100 schema:familyName Jiao
101 schema:givenName Shujie
102 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01164243372.27
103 rdf:type schema:Person
104 sg:person.013174645257.06 schema:affiliation grid-institutes:grid.19373.3f
105 schema:familyName Li
106 schema:givenName Hongtao
107 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013174645257.06
108 rdf:type schema:Person
109 sg:person.014030553577.89 schema:affiliation grid-institutes:grid.19373.3f
110 schema:familyName Jiang
111 schema:givenName Dongwei
112 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014030553577.89
113 rdf:type schema:Person
114 sg:person.014323674445.20 schema:affiliation grid-institutes:grid.19373.3f
115 schema:familyName Zhao
116 schema:givenName Liancheng
117 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014323674445.20
118 rdf:type schema:Person
119 sg:person.016316444455.84 schema:affiliation grid-institutes:grid.19373.3f
120 schema:familyName Peng
121 schema:givenName Ruiqin
122 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016316444455.84
123 rdf:type schema:Person
124 grid-institutes:grid.19373.3f schema:alternateName School of Materials Science and Engineering, Harbin Institute of Technology, 150001, Harbin, People’s Republic of China
125 schema:name School of Materials Science and Engineering, Harbin Institute of Technology, 150001, Harbin, People’s Republic of China
126 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...