Investigation of dark current and differential resistance contributing mechanisms in type-II InAs/GaSb superlattice View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2016-01-28

AUTHORS

Ruiqin Peng, Shujie Jiao, Dongwei Jiang, Hongtao Li, Liancheng Zhao

ABSTRACT

The zero-bias resistance area (R0A) product is a primary figure-of-merit of infrared detector. The contributions of different dark current to R0A have been analyzed based on a long wavelength infrared type-II InAs/GaSb superlattice p-i-n photodiode. A dark current of 2.052 × 10−4 A cm−2 and a differential resistance-area of 32.314 Ω cm2 at zero bias voltage are achieved with a 100 % cutoff of 12.5 μm at 77 K. The temperature-dependence and bias-dependence of the dark currents are studied experimentally and correlated to the theory. At 77 K, by modeling the different reduced carrier concentration, the dominant mechanism of R0A can be varied from generation-recombination to tunneling. More... »

PAGES

4566-4570

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s10854-016-4332-9

DOI

http://dx.doi.org/10.1007/s10854-016-4332-9

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1000124744


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "School of Materials Science and Engineering, Harbin Institute of Technology, 150001, Harbin, People\u2019s Republic of China", 
          "id": "http://www.grid.ac/institutes/grid.19373.3f", 
          "name": [
            "School of Materials Science and Engineering, Harbin Institute of Technology, 150001, Harbin, People\u2019s Republic of China"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Peng", 
        "givenName": "Ruiqin", 
        "id": "sg:person.016316444455.84", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016316444455.84"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "School of Materials Science and Engineering, Harbin Institute of Technology, 150001, Harbin, People\u2019s Republic of China", 
          "id": "http://www.grid.ac/institutes/grid.19373.3f", 
          "name": [
            "School of Materials Science and Engineering, Harbin Institute of Technology, 150001, Harbin, People\u2019s Republic of China"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Jiao", 
        "givenName": "Shujie", 
        "id": "sg:person.01164243372.27", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01164243372.27"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "School of Materials Science and Engineering, Harbin Institute of Technology, 150001, Harbin, People\u2019s Republic of China", 
          "id": "http://www.grid.ac/institutes/grid.19373.3f", 
          "name": [
            "School of Materials Science and Engineering, Harbin Institute of Technology, 150001, Harbin, People\u2019s Republic of China"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Jiang", 
        "givenName": "Dongwei", 
        "id": "sg:person.014030553577.89", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014030553577.89"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "School of Materials Science and Engineering, Harbin Institute of Technology, 150001, Harbin, People\u2019s Republic of China", 
          "id": "http://www.grid.ac/institutes/grid.19373.3f", 
          "name": [
            "School of Materials Science and Engineering, Harbin Institute of Technology, 150001, Harbin, People\u2019s Republic of China"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Li", 
        "givenName": "Hongtao", 
        "id": "sg:person.013174645257.06", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013174645257.06"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "School of Materials Science and Engineering, Harbin Institute of Technology, 150001, Harbin, People\u2019s Republic of China", 
          "id": "http://www.grid.ac/institutes/grid.19373.3f", 
          "name": [
            "School of Materials Science and Engineering, Harbin Institute of Technology, 150001, Harbin, People\u2019s Republic of China"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Zhao", 
        "givenName": "Liancheng", 
        "id": "sg:person.014323674445.20", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014323674445.20"
        ], 
        "type": "Person"
      }
    ], 
    "datePublished": "2016-01-28", 
    "datePublishedReg": "2016-01-28", 
    "description": "The zero-bias resistance area (R0A) product is a primary figure-of-merit of infrared detector. The contributions of different dark current to R0A have been analyzed based on a long wavelength infrared type-II InAs/GaSb superlattice p-i-n photodiode. A dark current of 2.052\u00a0\u00d7\u00a010\u22124\u00a0A\u00a0cm\u22122 and a differential resistance-area of 32.314\u00a0\u03a9\u00a0cm2 at zero bias voltage are achieved with a 100\u00a0% cutoff of 12.5\u00a0\u03bcm at 77\u00a0K. The temperature-dependence and bias-dependence of the dark currents are studied experimentally and correlated to the theory. At 77\u00a0K, by modeling the different reduced carrier concentration, the dominant mechanism of R0A can be varied from generation-recombination to tunneling.", 
    "genre": "article", 
    "id": "sg:pub.10.1007/s10854-016-4332-9", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isFundedItemOf": [
      {
        "id": "sg:grant.7197382", 
        "type": "MonetaryGrant"
      }, 
      {
        "id": "sg:grant.8302685", 
        "type": "MonetaryGrant"
      }
    ], 
    "isPartOf": [
      {
        "id": "sg:journal.1136825", 
        "issn": [
          "0957-4522", 
          "1573-482X"
        ], 
        "name": "Journal of Materials Science: Materials in Electronics", 
        "publisher": "Springer Nature", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "5", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "27"
      }
    ], 
    "keywords": [
      "dark current", 
      "InAs/GaSb superlattices", 
      "zero-bias resistance area product", 
      "infrared detectors", 
      "longer wavelengths", 
      "superlattice p", 
      "bias voltage", 
      "carrier concentration", 
      "R0A", 
      "dominant mechanism", 
      "differential resistance", 
      "resistance area product", 
      "detector", 
      "wavelength", 
      "photodiodes", 
      "current", 
      "cm2", 
      "tunneling", 
      "superlattices", 
      "primary figure", 
      "voltage", 
      "cutoff", 
      "theory", 
      "area product", 
      "merits", 
      "contribution", 
      "mechanism", 
      "investigation", 
      "products", 
      "figures", 
      "types", 
      "concentration", 
      "resistance", 
      "InAs/GaSb superlattice p", 
      "GaSb superlattice p", 
      "GaSb superlattice"
    ], 
    "name": "Investigation of dark current and differential resistance contributing mechanisms in type-II InAs/GaSb superlattice", 
    "pagination": "4566-4570", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1000124744"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1007/s10854-016-4332-9"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1007/s10854-016-4332-9", 
      "https://app.dimensions.ai/details/publication/pub.1000124744"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2021-12-01T19:36", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20211201/entities/gbq_results/article/article_689.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1007/s10854-016-4332-9"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1007/s10854-016-4332-9'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1007/s10854-016-4332-9'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1007/s10854-016-4332-9'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1007/s10854-016-4332-9'


 

This table displays all metadata directly associated to this object as RDF triples.

126 TRIPLES      21 PREDICATES      61 URIs      53 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1007/s10854-016-4332-9 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author N221a500d426f436aaacb4a5729d8dec5
4 schema:datePublished 2016-01-28
5 schema:datePublishedReg 2016-01-28
6 schema:description The zero-bias resistance area (R0A) product is a primary figure-of-merit of infrared detector. The contributions of different dark current to R0A have been analyzed based on a long wavelength infrared type-II InAs/GaSb superlattice p-i-n photodiode. A dark current of 2.052 × 10−4 A cm−2 and a differential resistance-area of 32.314 Ω cm2 at zero bias voltage are achieved with a 100 % cutoff of 12.5 μm at 77 K. The temperature-dependence and bias-dependence of the dark currents are studied experimentally and correlated to the theory. At 77 K, by modeling the different reduced carrier concentration, the dominant mechanism of R0A can be varied from generation-recombination to tunneling.
7 schema:genre article
8 schema:inLanguage en
9 schema:isAccessibleForFree false
10 schema:isPartOf N319da469955445a9b4ffc1c52ee2b3b5
11 N32340c9971fb4ef597be5b4aefc8cece
12 sg:journal.1136825
13 schema:keywords GaSb superlattice
14 GaSb superlattice p
15 InAs/GaSb superlattice p
16 InAs/GaSb superlattices
17 R0A
18 area product
19 bias voltage
20 carrier concentration
21 cm2
22 concentration
23 contribution
24 current
25 cutoff
26 dark current
27 detector
28 differential resistance
29 dominant mechanism
30 figures
31 infrared detectors
32 investigation
33 longer wavelengths
34 mechanism
35 merits
36 photodiodes
37 primary figure
38 products
39 resistance
40 resistance area product
41 superlattice p
42 superlattices
43 theory
44 tunneling
45 types
46 voltage
47 wavelength
48 zero-bias resistance area product
49 schema:name Investigation of dark current and differential resistance contributing mechanisms in type-II InAs/GaSb superlattice
50 schema:pagination 4566-4570
51 schema:productId N9adbe70f192e4de9b2586ab08ee2529a
52 Na3d264a6b7444b449f073528120bab4d
53 schema:sameAs https://app.dimensions.ai/details/publication/pub.1000124744
54 https://doi.org/10.1007/s10854-016-4332-9
55 schema:sdDatePublished 2021-12-01T19:36
56 schema:sdLicense https://scigraph.springernature.com/explorer/license/
57 schema:sdPublisher N6a3c11e6c98c4c148ea96bf906952a85
58 schema:url https://doi.org/10.1007/s10854-016-4332-9
59 sgo:license sg:explorer/license/
60 sgo:sdDataset articles
61 rdf:type schema:ScholarlyArticle
62 N221a500d426f436aaacb4a5729d8dec5 rdf:first sg:person.016316444455.84
63 rdf:rest N7141b6a024654deea28431edac024075
64 N319da469955445a9b4ffc1c52ee2b3b5 schema:issueNumber 5
65 rdf:type schema:PublicationIssue
66 N32340c9971fb4ef597be5b4aefc8cece schema:volumeNumber 27
67 rdf:type schema:PublicationVolume
68 N671d85d3386f47e187be167f04a9f725 rdf:first sg:person.013174645257.06
69 rdf:rest Na940f1bb5a9749d1892388964f842bd4
70 N6a3c11e6c98c4c148ea96bf906952a85 schema:name Springer Nature - SN SciGraph project
71 rdf:type schema:Organization
72 N7141b6a024654deea28431edac024075 rdf:first sg:person.01164243372.27
73 rdf:rest Nf2f6287cfc9643de9f0c44a9000482ca
74 N9adbe70f192e4de9b2586ab08ee2529a schema:name doi
75 schema:value 10.1007/s10854-016-4332-9
76 rdf:type schema:PropertyValue
77 Na3d264a6b7444b449f073528120bab4d schema:name dimensions_id
78 schema:value pub.1000124744
79 rdf:type schema:PropertyValue
80 Na940f1bb5a9749d1892388964f842bd4 rdf:first sg:person.014323674445.20
81 rdf:rest rdf:nil
82 Nf2f6287cfc9643de9f0c44a9000482ca rdf:first sg:person.014030553577.89
83 rdf:rest N671d85d3386f47e187be167f04a9f725
84 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
85 schema:name Engineering
86 rdf:type schema:DefinedTerm
87 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
88 schema:name Materials Engineering
89 rdf:type schema:DefinedTerm
90 sg:grant.7197382 http://pending.schema.org/fundedItem sg:pub.10.1007/s10854-016-4332-9
91 rdf:type schema:MonetaryGrant
92 sg:grant.8302685 http://pending.schema.org/fundedItem sg:pub.10.1007/s10854-016-4332-9
93 rdf:type schema:MonetaryGrant
94 sg:journal.1136825 schema:issn 0957-4522
95 1573-482X
96 schema:name Journal of Materials Science: Materials in Electronics
97 schema:publisher Springer Nature
98 rdf:type schema:Periodical
99 sg:person.01164243372.27 schema:affiliation grid-institutes:grid.19373.3f
100 schema:familyName Jiao
101 schema:givenName Shujie
102 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01164243372.27
103 rdf:type schema:Person
104 sg:person.013174645257.06 schema:affiliation grid-institutes:grid.19373.3f
105 schema:familyName Li
106 schema:givenName Hongtao
107 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013174645257.06
108 rdf:type schema:Person
109 sg:person.014030553577.89 schema:affiliation grid-institutes:grid.19373.3f
110 schema:familyName Jiang
111 schema:givenName Dongwei
112 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014030553577.89
113 rdf:type schema:Person
114 sg:person.014323674445.20 schema:affiliation grid-institutes:grid.19373.3f
115 schema:familyName Zhao
116 schema:givenName Liancheng
117 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014323674445.20
118 rdf:type schema:Person
119 sg:person.016316444455.84 schema:affiliation grid-institutes:grid.19373.3f
120 schema:familyName Peng
121 schema:givenName Ruiqin
122 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016316444455.84
123 rdf:type schema:Person
124 grid-institutes:grid.19373.3f schema:alternateName School of Materials Science and Engineering, Harbin Institute of Technology, 150001, Harbin, People’s Republic of China
125 schema:name School of Materials Science and Engineering, Harbin Institute of Technology, 150001, Harbin, People’s Republic of China
126 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...