TiO2/porous silicon nanocomposite passivation coating for mc-Si wafers View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2014-12-11

AUTHORS

N. Janene, M. Salem, M. Ben Rabha, M. A. El Khakani, B. Bessais, H. Alawadhi, M. Gaidi

ABSTRACT

This work reports on passivation effect of solar-grade multicrystalline Si (mc-Si) using a TiO2/porous silicon double coating. For this purpose, TiO2 nanoparticles were deposited onto porous silicon (PS)/mc-Si using pulsed laser ablation of titanium target. The structural and optoelectronic properties of the TiO2/PS treated mc-Si substrates were investigated by X-ray diffraction, Raman spectroscopy, optical spectrometry, photo-conductance and photoluminescence (PL). It was found that the minority carrier lifetime (τeff) of the mc-Si wafer could enhance at a nominal thickness of the TiO2 film (nanoparticle sizes). This was attributed to a surface passivation of the mc-Si wafer via TiO2-passivation of the PS film, whose PL intensity improves consequently. An optimal TiO2 thickness of 80 nm was found to give the highest PL intensity and an enhancement of the minority carrier lifetime from 5 µs for untreated mc-Si wafer to about 391 µs for a TiO2/PS treated wafers. More... »

PAGES

1585-1590

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s10854-014-2579-6

DOI

http://dx.doi.org/10.1007/s10854-014-2579-6

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1017374933


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