Negative magnetoresistance in SiC heteropolytype junctions View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2007-10-11

AUTHORS

Alexander Alexandrovich Lebedev, P. L. Abramov, N. V. Agrinskaya, V. I. Kozub, A. N. Kuznetsov, S. P. Lebedev, G. A. Oganesyan, L. M. Sorokin, A. V. Chernyaev, D. V. Shamshur

ABSTRACT

In this study, we carried out for the first time a galvanomagnetic investigation of 3C–SiC/6H–SiC heterostructures at liquid-helium temperatures and observed in n-3C–SiC low resistance of the samples and the appearance of a negative magnetoresistance in weak fields (~1 T). Analysis of the results we obtained shows that the low resistance is in all probability due to a metal—insulator transition in 3C–SiC epitaxial films. It was also found that the negative magnetoresistance magnitude decreases as the density of intertwine boundaries in a 3C–SiC epitaxial film becomes lower. More... »

PAGES

793-796

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s10854-007-9417-z

DOI

http://dx.doi.org/10.1007/s10854-007-9417-z

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1002284474


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