High temperature assessment of nitride-based devices View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2008-02

AUTHORS

R. Cuerdo, J. Pedrós, A. Navarro, A. F. Braña, J. L. Pau, E. Muñoz, F. Calle

ABSTRACT

The high temperature characterization of GaN-based devices, including high electron mobility transistors (HEMTs), p-i-n photodiodes and surface acoustic wave (SAW) filters is reported. Transmission line method (TLM) measurements reveal the reversible behaviour of both the ohmic contact resistance and the two-dimensional electron gas (2DEG) mobility. AlGaN/GaN HEMTs on sapphire and SiC substrates present a reduction of the drain current and the transconductance as temperature increases. The responsivity of InGaN/GaN photodiodes is enhanced and shifted to larger wavelengths with temperature, recovering its original value after the thermal cycle. The temperature coefficient of frequency of SAW filters on AlN epilayers on different substrates has been measured. The influence of temperature on the different surface acoustic modes is compared. More... »

PAGES

189-193

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s10854-007-9298-1

DOI

http://dx.doi.org/10.1007/s10854-007-9298-1

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1009275068


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