Germanium content dependence of the leakage current of recessed SiGe source/drain junctions View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2007-07

AUTHORS

Eddy Roger Simoen, Mireia Bargallo Gonzalez, Geert Eneman, Peter Verheyen, Aldo Benedetti, Hugo Bender, Roger Loo, Cor Claeys

ABSTRACT

The impact of the Ge fraction (x), on the leakage current of recessed Si1−xGex p+-n source/drain junctions has been investigated, for a fixed recess depth of 70 nm. It is found that both the bulk and the peripheral leakage current density increase approximately exponentially with increasing Ge content in the range 10–30%. Roughly speaking, the leakage current density increases one decade for every 5% increase in Ge. In case of the bulk leakage current density, this enhancement is shown to be related to the increase in extended defects penetrating the depletion region in the n-type silicon substrate. Transmission Electron Microscopy demonstrates a higher density of dislocations at the epitaxial interface for a higher Ge fraction, which are most likely generated by strain relaxation, induced by the implantation and activation of B in the p+ S/D regions. More... »

PAGES

787-791

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s10854-006-9102-7

DOI

http://dx.doi.org/10.1007/s10854-006-9102-7

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1025931737


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