The response of open-volume defects in Si0.92Ge0.08 to annealing in nitrogen or oxygen ambient View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2006-12-21

AUTHORS

D. A. Abdulmalik, P. G. Coleman, H. Z. Su, Y. M. Haddara, A. P. Knights

ABSTRACT

While the dynamics of thermal oxidation of Si has been adequately described for over three decades, details of SiGe oxidation are not entirely clear. In particular, the injection into the Si substrate of a super-saturation of interstitial defects during the formation of SiO2 may not be replicated in the SiGe system. Here we describe the response of relatively stable open-volume defects in a Si092Ge0.08 substrate to annealing at 900°C for 30 min in either an inert (nitrogen) or wet oxidizing ambient. The defects are initialized by He+ implantation at an energy and dose of 60 keV and 1 × 1016 cm−2 respectively, followed by annealing in an inert ambient at 800°C for 10 min. Confirmation of the creation and thermal evolution of the open-volume defects was provided by beam-based variable-energy positron annihilation spectroscopy. The positron measurements suggest that the defects are considerably reduced in size following the secondary nitrogen annealing step. In comparison, the average size of the open-volume defects is reduced to a significantly smaller degree following secondary oxygen annealing. This result is consistent with a suppression of interstitial formation during oxidation, in contrast with the case for the thermal oxidation of silicon, but further work is currently underway to test this interpretation. More... »

PAGES

753-757

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s10854-006-9084-5

DOI

http://dx.doi.org/10.1007/s10854-006-9084-5

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1042067781


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Department of Physics, University of Bath, BA2 7AY, Bath, UK", 
          "id": "http://www.grid.ac/institutes/grid.7340.0", 
          "name": [
            "Department of Physics, University of Bath, BA2 7AY, Bath, UK"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Abdulmalik", 
        "givenName": "D. A.", 
        "id": "sg:person.01150127214.30", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01150127214.30"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Department of Physics, University of Bath, BA2 7AY, Bath, UK", 
          "id": "http://www.grid.ac/institutes/grid.7340.0", 
          "name": [
            "Department of Physics, University of Bath, BA2 7AY, Bath, UK"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Coleman", 
        "givenName": "P. G.", 
        "id": "sg:person.010646673351.16", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010646673351.16"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Department of Electrical and Computer Engineering, McMaster University, 1280 Main Street West, L8S 4L7, Hamilton, Canada", 
          "id": "http://www.grid.ac/institutes/grid.25073.33", 
          "name": [
            "Department of Electrical and Computer Engineering, McMaster University, 1280 Main Street West, L8S 4L7, Hamilton, Canada"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Su", 
        "givenName": "H. Z.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Department of Electrical and Computer Engineering, McMaster University, 1280 Main Street West, L8S 4L7, Hamilton, Canada", 
          "id": "http://www.grid.ac/institutes/grid.25073.33", 
          "name": [
            "Department of Electrical and Computer Engineering, McMaster University, 1280 Main Street West, L8S 4L7, Hamilton, Canada"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Haddara", 
        "givenName": "Y. M.", 
        "id": "sg:person.015524162547.22", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015524162547.22"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Department of Engineering Physics, McMaster University, 1280 Main Street West, L8S 4L7, Hamilton, Canada", 
          "id": "http://www.grid.ac/institutes/grid.25073.33", 
          "name": [
            "Department of Engineering Physics, McMaster University, 1280 Main Street West, L8S 4L7, Hamilton, Canada"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Knights", 
        "givenName": "A. P.", 
        "id": "sg:person.0726136536.95", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0726136536.95"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1007/978-3-662-03893-2", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1109712136", 
          "https://doi.org/10.1007/978-3-662-03893-2"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1557/jmr.2000.0211", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1030631869", 
          "https://doi.org/10.1557/jmr.2000.0211"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2006-12-21", 
    "datePublishedReg": "2006-12-21", 
    "description": "While the dynamics of thermal oxidation of Si has been adequately described for over three decades, details of SiGe oxidation are not entirely clear. In particular, the injection into the Si substrate of a super-saturation of interstitial defects during the formation of SiO2 may not be replicated in the SiGe system. Here we describe the response of relatively stable open-volume defects in a Si092Ge0.08 substrate to annealing at 900\u00b0C for 30\u00a0min in either an inert (nitrogen) or wet oxidizing ambient. The defects are initialized by He+ implantation at an energy and dose of 60\u00a0keV and 1\u00a0\u00d7\u00a01016\u00a0cm\u22122 respectively, followed by annealing in an inert ambient at 800\u00b0C for 10\u00a0min. Confirmation of the creation and thermal evolution of the open-volume defects was provided by beam-based variable-energy positron annihilation spectroscopy. The positron measurements suggest that the defects are considerably reduced in size following the secondary nitrogen annealing step. In comparison, the average size of the open-volume defects is reduced to a significantly smaller degree following secondary oxygen annealing. This result is consistent with a suppression of interstitial formation during oxidation, in contrast with the case for the thermal oxidation of silicon, but further work is currently underway to test this interpretation.", 
    "genre": "article", 
    "id": "sg:pub.10.1007/s10854-006-9084-5", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136825", 
        "issn": [
          "0957-4522", 
          "1573-482X"
        ], 
        "name": "Journal of Materials Science: Materials in Electronics", 
        "publisher": "Springer Nature", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "7", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "18"
      }
    ], 
    "keywords": [
      "open-volume defects", 
      "variable-energy positron annihilation spectroscopy", 
      "positron annihilation spectroscopy", 
      "positron measurements", 
      "formation of SiO2", 
      "annihilation spectroscopy", 
      "SiGe system", 
      "thermal oxidation", 
      "Si substrate", 
      "oxygen ambient", 
      "interstitial defects", 
      "annealing step", 
      "oxygen annealing", 
      "inert ambient", 
      "oxidizing ambient", 
      "thermal evolution", 
      "keV", 
      "average size", 
      "interstitial formation", 
      "silicon", 
      "spectroscopy", 
      "Si", 
      "substrate", 
      "ambient", 
      "energy", 
      "annealing", 
      "SiO2", 
      "measurements", 
      "defects", 
      "formation", 
      "dynamics", 
      "implantation", 
      "evolution", 
      "detail", 
      "size", 
      "nitrogen", 
      "inert", 
      "creation", 
      "small degree", 
      "suppression", 
      "interpretation", 
      "oxidation", 
      "system", 
      "work", 
      "contrast", 
      "comparison", 
      "results", 
      "dose", 
      "confirmation", 
      "degree", 
      "step", 
      "cases", 
      "decades", 
      "further work", 
      "injection", 
      "response", 
      "min", 
      "SiGe oxidation", 
      "stable open-volume defects", 
      "wet oxidizing ambient", 
      "beam-based variable-energy positron annihilation spectroscopy", 
      "secondary nitrogen annealing step", 
      "nitrogen annealing step", 
      "secondary oxygen annealing"
    ], 
    "name": "The response of open-volume defects in Si0.92Ge0.08 to annealing in nitrogen or oxygen ambient", 
    "pagination": "753-757", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1042067781"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1007/s10854-006-9084-5"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1007/s10854-006-9084-5", 
      "https://app.dimensions.ai/details/publication/pub.1042067781"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2021-11-01T18:09", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20211101/entities/gbq_results/article/article_420.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1007/s10854-006-9084-5"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1007/s10854-006-9084-5'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1007/s10854-006-9084-5'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1007/s10854-006-9084-5'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1007/s10854-006-9084-5'


 

This table displays all metadata directly associated to this object as RDF triples.

162 TRIPLES      22 PREDICATES      91 URIs      81 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1007/s10854-006-9084-5 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author N95929b28495c4c04b12d1a4a3e7334ba
4 schema:citation sg:pub.10.1007/978-3-662-03893-2
5 sg:pub.10.1557/jmr.2000.0211
6 schema:datePublished 2006-12-21
7 schema:datePublishedReg 2006-12-21
8 schema:description While the dynamics of thermal oxidation of Si has been adequately described for over three decades, details of SiGe oxidation are not entirely clear. In particular, the injection into the Si substrate of a super-saturation of interstitial defects during the formation of SiO2 may not be replicated in the SiGe system. Here we describe the response of relatively stable open-volume defects in a Si092Ge0.08 substrate to annealing at 900°C for 30 min in either an inert (nitrogen) or wet oxidizing ambient. The defects are initialized by He+ implantation at an energy and dose of 60 keV and 1 × 1016 cm−2 respectively, followed by annealing in an inert ambient at 800°C for 10 min. Confirmation of the creation and thermal evolution of the open-volume defects was provided by beam-based variable-energy positron annihilation spectroscopy. The positron measurements suggest that the defects are considerably reduced in size following the secondary nitrogen annealing step. In comparison, the average size of the open-volume defects is reduced to a significantly smaller degree following secondary oxygen annealing. This result is consistent with a suppression of interstitial formation during oxidation, in contrast with the case for the thermal oxidation of silicon, but further work is currently underway to test this interpretation.
9 schema:genre article
10 schema:inLanguage en
11 schema:isAccessibleForFree false
12 schema:isPartOf Ne8ec86b7b0f6405f8f513bef20e94218
13 Nf4de54897f7446b7ad87ee829368a2bc
14 sg:journal.1136825
15 schema:keywords Si
16 Si substrate
17 SiGe oxidation
18 SiGe system
19 SiO2
20 ambient
21 annealing
22 annealing step
23 annihilation spectroscopy
24 average size
25 beam-based variable-energy positron annihilation spectroscopy
26 cases
27 comparison
28 confirmation
29 contrast
30 creation
31 decades
32 defects
33 degree
34 detail
35 dose
36 dynamics
37 energy
38 evolution
39 formation
40 formation of SiO2
41 further work
42 implantation
43 inert
44 inert ambient
45 injection
46 interpretation
47 interstitial defects
48 interstitial formation
49 keV
50 measurements
51 min
52 nitrogen
53 nitrogen annealing step
54 open-volume defects
55 oxidation
56 oxidizing ambient
57 oxygen ambient
58 oxygen annealing
59 positron annihilation spectroscopy
60 positron measurements
61 response
62 results
63 secondary nitrogen annealing step
64 secondary oxygen annealing
65 silicon
66 size
67 small degree
68 spectroscopy
69 stable open-volume defects
70 step
71 substrate
72 suppression
73 system
74 thermal evolution
75 thermal oxidation
76 variable-energy positron annihilation spectroscopy
77 wet oxidizing ambient
78 work
79 schema:name The response of open-volume defects in Si0.92Ge0.08 to annealing in nitrogen or oxygen ambient
80 schema:pagination 753-757
81 schema:productId Nece56bc6774d4bc59b19bb08f52b354c
82 Nfa20490562564d80a6cf8c229b6dc6fb
83 schema:sameAs https://app.dimensions.ai/details/publication/pub.1042067781
84 https://doi.org/10.1007/s10854-006-9084-5
85 schema:sdDatePublished 2021-11-01T18:09
86 schema:sdLicense https://scigraph.springernature.com/explorer/license/
87 schema:sdPublisher N9b8c64d334b048f095a9a8c1112b3527
88 schema:url https://doi.org/10.1007/s10854-006-9084-5
89 sgo:license sg:explorer/license/
90 sgo:sdDataset articles
91 rdf:type schema:ScholarlyArticle
92 N0d62240e31944222841a1ce5121a7ebf rdf:first sg:person.0726136536.95
93 rdf:rest rdf:nil
94 N1c783d4a15a642ceab90b8230a08b020 rdf:first N675ef12c593f471dac7cb549489abeda
95 rdf:rest Nadf4fdb058c74cd39c3825f72b0b8cec
96 N675ef12c593f471dac7cb549489abeda schema:affiliation grid-institutes:grid.25073.33
97 schema:familyName Su
98 schema:givenName H. Z.
99 rdf:type schema:Person
100 N95929b28495c4c04b12d1a4a3e7334ba rdf:first sg:person.01150127214.30
101 rdf:rest Neb1fe10ad42d41fcafba5180ff9ab84b
102 N9b8c64d334b048f095a9a8c1112b3527 schema:name Springer Nature - SN SciGraph project
103 rdf:type schema:Organization
104 Nadf4fdb058c74cd39c3825f72b0b8cec rdf:first sg:person.015524162547.22
105 rdf:rest N0d62240e31944222841a1ce5121a7ebf
106 Ne8ec86b7b0f6405f8f513bef20e94218 schema:volumeNumber 18
107 rdf:type schema:PublicationVolume
108 Neb1fe10ad42d41fcafba5180ff9ab84b rdf:first sg:person.010646673351.16
109 rdf:rest N1c783d4a15a642ceab90b8230a08b020
110 Nece56bc6774d4bc59b19bb08f52b354c schema:name doi
111 schema:value 10.1007/s10854-006-9084-5
112 rdf:type schema:PropertyValue
113 Nf4de54897f7446b7ad87ee829368a2bc schema:issueNumber 7
114 rdf:type schema:PublicationIssue
115 Nfa20490562564d80a6cf8c229b6dc6fb schema:name dimensions_id
116 schema:value pub.1042067781
117 rdf:type schema:PropertyValue
118 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
119 schema:name Engineering
120 rdf:type schema:DefinedTerm
121 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
122 schema:name Materials Engineering
123 rdf:type schema:DefinedTerm
124 sg:journal.1136825 schema:issn 0957-4522
125 1573-482X
126 schema:name Journal of Materials Science: Materials in Electronics
127 schema:publisher Springer Nature
128 rdf:type schema:Periodical
129 sg:person.010646673351.16 schema:affiliation grid-institutes:grid.7340.0
130 schema:familyName Coleman
131 schema:givenName P. G.
132 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010646673351.16
133 rdf:type schema:Person
134 sg:person.01150127214.30 schema:affiliation grid-institutes:grid.7340.0
135 schema:familyName Abdulmalik
136 schema:givenName D. A.
137 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01150127214.30
138 rdf:type schema:Person
139 sg:person.015524162547.22 schema:affiliation grid-institutes:grid.25073.33
140 schema:familyName Haddara
141 schema:givenName Y. M.
142 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015524162547.22
143 rdf:type schema:Person
144 sg:person.0726136536.95 schema:affiliation grid-institutes:grid.25073.33
145 schema:familyName Knights
146 schema:givenName A. P.
147 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0726136536.95
148 rdf:type schema:Person
149 sg:pub.10.1007/978-3-662-03893-2 schema:sameAs https://app.dimensions.ai/details/publication/pub.1109712136
150 https://doi.org/10.1007/978-3-662-03893-2
151 rdf:type schema:CreativeWork
152 sg:pub.10.1557/jmr.2000.0211 schema:sameAs https://app.dimensions.ai/details/publication/pub.1030631869
153 https://doi.org/10.1557/jmr.2000.0211
154 rdf:type schema:CreativeWork
155 grid-institutes:grid.25073.33 schema:alternateName Department of Electrical and Computer Engineering, McMaster University, 1280 Main Street West, L8S 4L7, Hamilton, Canada
156 Department of Engineering Physics, McMaster University, 1280 Main Street West, L8S 4L7, Hamilton, Canada
157 schema:name Department of Electrical and Computer Engineering, McMaster University, 1280 Main Street West, L8S 4L7, Hamilton, Canada
158 Department of Engineering Physics, McMaster University, 1280 Main Street West, L8S 4L7, Hamilton, Canada
159 rdf:type schema:Organization
160 grid-institutes:grid.7340.0 schema:alternateName Department of Physics, University of Bath, BA2 7AY, Bath, UK
161 schema:name Department of Physics, University of Bath, BA2 7AY, Bath, UK
162 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...