Ionization-induced annealing in silicon upon dual-beam irradiation View Full Text


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Article Info

DATE

2020-02-07

AUTHORS

Lionel Thomé, Gaëlle Gutierrez, Isabelle Monnet, Frédérico Garrido, Aurélien Debelle

ABSTRACT

Silicon single crystals were irradiated at room temperature (RT) with single and dual low-velocity (i.e., 900 keV I) and high-velocity (i.e., 27 MeV Fe or 36 MeV W) ion beams in order to study synergistic effects between nuclear and electronic energy losses in semiconductors. The damage created by irradiation was quantified by using Rutherford backscattering spectrometry in the channeling mode and Raman spectroscopy, and it was visualized using transmission electron microscopy. Whereas single low-velocity ion irradiation leads to amorphization of the surface layer of Si crystals, the use of a dual low- and high-velocity ion beam prevents this phase transformation. However, a remaining disorder exists, the level of which depends on the ratio of the high- to low-velocity ion fluxes. The higher the ratio (1.6 in the present case), the lower the disorder level, with a 30% integrated disorder instead of 100% upon single low-energy irradiation. These results provide evidence that ionization-induced disorder annealing can occur at RT in Si. More... »

PAGES

5938-5947

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s10853-020-04399-8

DOI

http://dx.doi.org/10.1007/s10853-020-04399-8

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1124674510


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "CNRS/IN2P3, Institut de Physique des 2 Infinis Ir\u00e8ne Joliot-Curie, IJCLab, Universit\u00e9 Paris-Saclay, 91405, Orsay, France", 
          "id": "http://www.grid.ac/institutes/grid.508754.b", 
          "name": [
            "CNRS/IN2P3, Institut de Physique des 2 Infinis Ir\u00e8ne Joliot-Curie, IJCLab, Universit\u00e9 Paris-Saclay, 91405, Orsay, France"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Thom\u00e9", 
        "givenName": "Lionel", 
        "id": "sg:person.015430104323.74", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015430104323.74"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "CEA, DEN, Service de Recherches de M\u00e9tallurgie Physique, Laboratoire JANNUS, Universit\u00e9 Paris-Saclay, 91191, Gif-sur-Yvette, France", 
          "id": "http://www.grid.ac/institutes/grid.457334.2", 
          "name": [
            "CEA, DEN, Service de Recherches de M\u00e9tallurgie Physique, Laboratoire JANNUS, Universit\u00e9 Paris-Saclay, 91191, Gif-sur-Yvette, France"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Gutierrez", 
        "givenName": "Ga\u00eblle", 
        "id": "sg:person.015771126207.95", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015771126207.95"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Centre de Recherche sur les Ions, les Mat\u00e9riaux et la Photonique, ENSICAEN, UNICAEN, CEA, CNRS, CIMAP, Normandie Universit\u00e9, 14000, Caen, France", 
          "id": "http://www.grid.ac/institutes/grid.412043.0", 
          "name": [
            "Centre de Recherche sur les Ions, les Mat\u00e9riaux et la Photonique, ENSICAEN, UNICAEN, CEA, CNRS, CIMAP, Normandie Universit\u00e9, 14000, Caen, France"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Monnet", 
        "givenName": "Isabelle", 
        "id": "sg:person.01047033056.28", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01047033056.28"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "CNRS/IN2P3, Institut de Physique des 2 Infinis Ir\u00e8ne Joliot-Curie, IJCLab, Universit\u00e9 Paris-Saclay, 91405, Orsay, France", 
          "id": "http://www.grid.ac/institutes/grid.508754.b", 
          "name": [
            "CNRS/IN2P3, Institut de Physique des 2 Infinis Ir\u00e8ne Joliot-Curie, IJCLab, Universit\u00e9 Paris-Saclay, 91405, Orsay, France"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Garrido", 
        "givenName": "Fr\u00e9d\u00e9rico", 
        "id": "sg:person.013612020556.19", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013612020556.19"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "CEA, DEN, Service de Recherches de M\u00e9tallurgie Physique, Laboratoire JANNUS, Universit\u00e9 Paris-Saclay, 91191, Gif-sur-Yvette, France", 
          "id": "http://www.grid.ac/institutes/grid.457334.2", 
          "name": [
            "CNRS/IN2P3, Institut de Physique des 2 Infinis Ir\u00e8ne Joliot-Curie, IJCLab, Universit\u00e9 Paris-Saclay, 91405, Orsay, France", 
            "CEA, DEN, Service de Recherches de M\u00e9tallurgie Physique, Laboratoire JANNUS, Universit\u00e9 Paris-Saclay, 91191, Gif-sur-Yvette, France"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Debelle", 
        "givenName": "Aur\u00e9lien", 
        "id": "sg:person.010434136161.41", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010434136161.41"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1038/ncomms9049", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1028231225", 
          "https://doi.org/10.1038/ncomms9049"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/978-3-319-33561-2", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1001671088", 
          "https://doi.org/10.1007/978-3-319-33561-2"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/479309a", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1027797578", 
          "https://doi.org/10.1038/479309a"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/978-3-540-88789-8", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1044786458", 
          "https://doi.org/10.1007/978-3-540-88789-8"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2020-02-07", 
    "datePublishedReg": "2020-02-07", 
    "description": "Silicon single crystals were irradiated at room temperature (RT) with single and dual low-velocity (i.e., 900\u00a0keV I) and high-velocity (i.e., 27\u00a0MeV Fe or 36\u00a0MeV W) ion beams in order to study synergistic effects between nuclear and electronic energy losses in semiconductors. The damage created by irradiation was quantified by using Rutherford backscattering spectrometry in the channeling mode and Raman spectroscopy, and it was visualized using transmission electron microscopy. Whereas single low-velocity ion irradiation leads to amorphization of the surface layer of Si crystals, the use of a dual low- and high-velocity ion beam prevents this phase transformation. However, a remaining disorder exists, the level of which depends on the ratio of the high- to low-velocity ion fluxes. The higher the ratio (1.6 in the present case), the lower the disorder level, with a 30% integrated disorder instead of 100% upon single low-energy irradiation. These results provide evidence that ionization-induced disorder annealing can occur at RT in Si.", 
    "genre": "article", 
    "id": "sg:pub.10.1007/s10853-020-04399-8", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1312116", 
        "issn": [
          "0022-2461", 
          "1573-4803"
        ], 
        "name": "Journal of Materials Science", 
        "publisher": "Springer Nature", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "14", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "55"
      }
    ], 
    "keywords": [
      "high-velocity ion beams", 
      "electronic energy loss", 
      "room temperature", 
      "transmission electron microscopy", 
      "low-energy irradiation", 
      "dual-beam irradiation", 
      "silicon single crystals", 
      "ion beam", 
      "ion irradiation", 
      "ion flux", 
      "Raman spectroscopy", 
      "energy loss", 
      "Si crystals", 
      "electron microscopy", 
      "disorder level", 
      "single crystals", 
      "synergistic effect", 
      "phase transformation", 
      "surface layer", 
      "irradiation", 
      "crystals", 
      "annealing", 
      "Rutherford", 
      "semiconductors", 
      "beam", 
      "silicon", 
      "spectroscopy", 
      "microscopy", 
      "Si", 
      "amorphization", 
      "layer", 
      "flux", 
      "mode", 
      "temperature", 
      "ratio", 
      "order", 
      "spectrometry", 
      "results", 
      "damage", 
      "loss", 
      "effect", 
      "transformation", 
      "use", 
      "levels", 
      "prevents", 
      "evidence", 
      "disorders"
    ], 
    "name": "Ionization-induced annealing in silicon upon dual-beam irradiation", 
    "pagination": "5938-5947", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1124674510"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1007/s10853-020-04399-8"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1007/s10853-020-04399-8", 
      "https://app.dimensions.ai/details/publication/pub.1124674510"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-11-24T21:06", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20221124/entities/gbq_results/article/article_844.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1007/s10853-020-04399-8"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

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This table displays all metadata directly associated to this object as RDF triples.

155 TRIPLES      21 PREDICATES      75 URIs      63 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1007/s10853-020-04399-8 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author N6a1846faf0804fbe8d94c7111f7931fc
4 schema:citation sg:pub.10.1007/978-3-319-33561-2
5 sg:pub.10.1007/978-3-540-88789-8
6 sg:pub.10.1038/479309a
7 sg:pub.10.1038/ncomms9049
8 schema:datePublished 2020-02-07
9 schema:datePublishedReg 2020-02-07
10 schema:description Silicon single crystals were irradiated at room temperature (RT) with single and dual low-velocity (i.e., 900 keV I) and high-velocity (i.e., 27 MeV Fe or 36 MeV W) ion beams in order to study synergistic effects between nuclear and electronic energy losses in semiconductors. The damage created by irradiation was quantified by using Rutherford backscattering spectrometry in the channeling mode and Raman spectroscopy, and it was visualized using transmission electron microscopy. Whereas single low-velocity ion irradiation leads to amorphization of the surface layer of Si crystals, the use of a dual low- and high-velocity ion beam prevents this phase transformation. However, a remaining disorder exists, the level of which depends on the ratio of the high- to low-velocity ion fluxes. The higher the ratio (1.6 in the present case), the lower the disorder level, with a 30% integrated disorder instead of 100% upon single low-energy irradiation. These results provide evidence that ionization-induced disorder annealing can occur at RT in Si.
11 schema:genre article
12 schema:isAccessibleForFree false
13 schema:isPartOf N4fe51008fcd24eea9cd5c402c9b6377c
14 N9078fa930dc447469a0c9b7c5f9be089
15 sg:journal.1312116
16 schema:keywords Raman spectroscopy
17 Rutherford
18 Si
19 Si crystals
20 amorphization
21 annealing
22 beam
23 crystals
24 damage
25 disorder level
26 disorders
27 dual-beam irradiation
28 effect
29 electron microscopy
30 electronic energy loss
31 energy loss
32 evidence
33 flux
34 high-velocity ion beams
35 ion beam
36 ion flux
37 ion irradiation
38 irradiation
39 layer
40 levels
41 loss
42 low-energy irradiation
43 microscopy
44 mode
45 order
46 phase transformation
47 prevents
48 ratio
49 results
50 room temperature
51 semiconductors
52 silicon
53 silicon single crystals
54 single crystals
55 spectrometry
56 spectroscopy
57 surface layer
58 synergistic effect
59 temperature
60 transformation
61 transmission electron microscopy
62 use
63 schema:name Ionization-induced annealing in silicon upon dual-beam irradiation
64 schema:pagination 5938-5947
65 schema:productId N4a461258e054458e8295a7744608c501
66 Nf4f1c3008a2d470199c8bb311a713e3e
67 schema:sameAs https://app.dimensions.ai/details/publication/pub.1124674510
68 https://doi.org/10.1007/s10853-020-04399-8
69 schema:sdDatePublished 2022-11-24T21:06
70 schema:sdLicense https://scigraph.springernature.com/explorer/license/
71 schema:sdPublisher N1c2ab637cff246b5af21259e80fa6ab9
72 schema:url https://doi.org/10.1007/s10853-020-04399-8
73 sgo:license sg:explorer/license/
74 sgo:sdDataset articles
75 rdf:type schema:ScholarlyArticle
76 N1c2ab637cff246b5af21259e80fa6ab9 schema:name Springer Nature - SN SciGraph project
77 rdf:type schema:Organization
78 N448c013f6093444585a28e2a19c3ee7d rdf:first sg:person.013612020556.19
79 rdf:rest Nf604b7012dac4cb2a16e57e417388e97
80 N4a461258e054458e8295a7744608c501 schema:name doi
81 schema:value 10.1007/s10853-020-04399-8
82 rdf:type schema:PropertyValue
83 N4fe51008fcd24eea9cd5c402c9b6377c schema:volumeNumber 55
84 rdf:type schema:PublicationVolume
85 N6a1846faf0804fbe8d94c7111f7931fc rdf:first sg:person.015430104323.74
86 rdf:rest Na6d600626ee44d0189e8432a578a5e9c
87 N9078fa930dc447469a0c9b7c5f9be089 schema:issueNumber 14
88 rdf:type schema:PublicationIssue
89 Na6d600626ee44d0189e8432a578a5e9c rdf:first sg:person.015771126207.95
90 rdf:rest Nd6a6d1025fa545ee9a4b565cb2a3abec
91 Nd6a6d1025fa545ee9a4b565cb2a3abec rdf:first sg:person.01047033056.28
92 rdf:rest N448c013f6093444585a28e2a19c3ee7d
93 Nf4f1c3008a2d470199c8bb311a713e3e schema:name dimensions_id
94 schema:value pub.1124674510
95 rdf:type schema:PropertyValue
96 Nf604b7012dac4cb2a16e57e417388e97 rdf:first sg:person.010434136161.41
97 rdf:rest rdf:nil
98 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
99 schema:name Engineering
100 rdf:type schema:DefinedTerm
101 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
102 schema:name Materials Engineering
103 rdf:type schema:DefinedTerm
104 sg:journal.1312116 schema:issn 0022-2461
105 1573-4803
106 schema:name Journal of Materials Science
107 schema:publisher Springer Nature
108 rdf:type schema:Periodical
109 sg:person.010434136161.41 schema:affiliation grid-institutes:grid.457334.2
110 schema:familyName Debelle
111 schema:givenName Aurélien
112 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010434136161.41
113 rdf:type schema:Person
114 sg:person.01047033056.28 schema:affiliation grid-institutes:grid.412043.0
115 schema:familyName Monnet
116 schema:givenName Isabelle
117 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01047033056.28
118 rdf:type schema:Person
119 sg:person.013612020556.19 schema:affiliation grid-institutes:grid.508754.b
120 schema:familyName Garrido
121 schema:givenName Frédérico
122 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013612020556.19
123 rdf:type schema:Person
124 sg:person.015430104323.74 schema:affiliation grid-institutes:grid.508754.b
125 schema:familyName Thomé
126 schema:givenName Lionel
127 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015430104323.74
128 rdf:type schema:Person
129 sg:person.015771126207.95 schema:affiliation grid-institutes:grid.457334.2
130 schema:familyName Gutierrez
131 schema:givenName Gaëlle
132 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015771126207.95
133 rdf:type schema:Person
134 sg:pub.10.1007/978-3-319-33561-2 schema:sameAs https://app.dimensions.ai/details/publication/pub.1001671088
135 https://doi.org/10.1007/978-3-319-33561-2
136 rdf:type schema:CreativeWork
137 sg:pub.10.1007/978-3-540-88789-8 schema:sameAs https://app.dimensions.ai/details/publication/pub.1044786458
138 https://doi.org/10.1007/978-3-540-88789-8
139 rdf:type schema:CreativeWork
140 sg:pub.10.1038/479309a schema:sameAs https://app.dimensions.ai/details/publication/pub.1027797578
141 https://doi.org/10.1038/479309a
142 rdf:type schema:CreativeWork
143 sg:pub.10.1038/ncomms9049 schema:sameAs https://app.dimensions.ai/details/publication/pub.1028231225
144 https://doi.org/10.1038/ncomms9049
145 rdf:type schema:CreativeWork
146 grid-institutes:grid.412043.0 schema:alternateName Centre de Recherche sur les Ions, les Matériaux et la Photonique, ENSICAEN, UNICAEN, CEA, CNRS, CIMAP, Normandie Université, 14000, Caen, France
147 schema:name Centre de Recherche sur les Ions, les Matériaux et la Photonique, ENSICAEN, UNICAEN, CEA, CNRS, CIMAP, Normandie Université, 14000, Caen, France
148 rdf:type schema:Organization
149 grid-institutes:grid.457334.2 schema:alternateName CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, Université Paris-Saclay, 91191, Gif-sur-Yvette, France
150 schema:name CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, Université Paris-Saclay, 91191, Gif-sur-Yvette, France
151 CNRS/IN2P3, Institut de Physique des 2 Infinis Irène Joliot-Curie, IJCLab, Université Paris-Saclay, 91405, Orsay, France
152 rdf:type schema:Organization
153 grid-institutes:grid.508754.b schema:alternateName CNRS/IN2P3, Institut de Physique des 2 Infinis Irène Joliot-Curie, IJCLab, Université Paris-Saclay, 91405, Orsay, France
154 schema:name CNRS/IN2P3, Institut de Physique des 2 Infinis Irène Joliot-Curie, IJCLab, Université Paris-Saclay, 91405, Orsay, France
155 rdf:type schema:Organization
 




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