Track formation in III-N semiconductors irradiated by swift heavy ions and fullerene and re-evaluation of the inelastic thermal spike model View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2015-05-07

AUTHORS

M. Sall, I. Monnet, F. Moisy, C. Grygiel, S. Jublot-Leclerc, S. Della–Negra, M. Toulemonde, E. Balanzat

ABSTRACT

AlN, GaN, and InN were irradiated at room temperature with monatomic swift heavy ions and high-energy fullerenes. Ion track formation was studied using transmission electron microscopy in both plane view and cross-sectional modes. A full experimental description of ion track formation in these compounds is presented. AlN shows a remarkable resistance towards track formation; InN is the most sensitive and shows partial decomposition, likely into N2 and metallic clusters; the overlapping of the amorphous tracks in GaN does not give an amorphous layer because of a track-induced recrystallization. We discuss the application of the inelastic thermal spike model, which allows good and simple predictions of track radii in oxides, to the studied III-nitrides, and in general to semiconductors. More... »

PAGES

5214-5227

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s10853-015-9069-y

DOI

http://dx.doi.org/10.1007/s10853-015-9069-y

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1017901791


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