Current conduction mechanisms in HfO2 and SrHfON thin films prepared by magnetron sputtering View Full Text


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Article Info

DATE

2013-11-21

AUTHORS

Li-ping Feng, Ning Li, Hao Tian, Zheng-tang Liu

ABSTRACT

Metal–oxide–semiconductor (MOS) capacitors incorporating HfO2 and SrHfON gate dielectrics were fabricated by magnetron sputtering. The interface quality, thermal stability, and electrical properties of the MOS capacitors have been investigated. Compared to HfO2 dielectric film, SrHfON dielectric film has thin interface layer with Si substrate, good thermal stability, and low leakage current densities. The dominant current conduction mechanisms (CCMs) of HfO2 film are Schottky emission or Poole–Frenkel emission at low and high electric fields. The main CCMs of SrHfON film are Schottky emission or Poole–Frenkel emission at low electric field, whereas, the CCMs are replaced by space charge limited current at high electric field. More... »

PAGES

1875-1881

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s10853-013-7876-6

DOI

http://dx.doi.org/10.1007/s10853-013-7876-6

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1038729518


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "State Key Lab of Solidification Processing, College of Materials Science and Engineering, Northwestern Polytechnical University, 710072, Xi\u2019an, Shaanxi, China", 
          "id": "http://www.grid.ac/institutes/grid.440588.5", 
          "name": [
            "State Key Lab of Solidification Processing, College of Materials Science and Engineering, Northwestern Polytechnical University, 710072, Xi\u2019an, Shaanxi, China"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Feng", 
        "givenName": "Li-ping", 
        "id": "sg:person.011307534451.15", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011307534451.15"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "State Key Lab of Solidification Processing, College of Materials Science and Engineering, Northwestern Polytechnical University, 710072, Xi\u2019an, Shaanxi, China", 
          "id": "http://www.grid.ac/institutes/grid.440588.5", 
          "name": [
            "State Key Lab of Solidification Processing, College of Materials Science and Engineering, Northwestern Polytechnical University, 710072, Xi\u2019an, Shaanxi, China"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Li", 
        "givenName": "Ning", 
        "id": "sg:person.016667225555.51", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016667225555.51"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "State Key Lab of Solidification Processing, College of Materials Science and Engineering, Northwestern Polytechnical University, 710072, Xi\u2019an, Shaanxi, China", 
          "id": "http://www.grid.ac/institutes/grid.440588.5", 
          "name": [
            "State Key Lab of Solidification Processing, College of Materials Science and Engineering, Northwestern Polytechnical University, 710072, Xi\u2019an, Shaanxi, China"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Tian", 
        "givenName": "Hao", 
        "id": "sg:person.014374301277.99", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014374301277.99"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "State Key Lab of Solidification Processing, College of Materials Science and Engineering, Northwestern Polytechnical University, 710072, Xi\u2019an, Shaanxi, China", 
          "id": "http://www.grid.ac/institutes/grid.440588.5", 
          "name": [
            "State Key Lab of Solidification Processing, College of Materials Science and Engineering, Northwestern Polytechnical University, 710072, Xi\u2019an, Shaanxi, China"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Liu", 
        "givenName": "Zheng-tang", 
        "id": "sg:person.012151422352.85", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012151422352.85"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1007/s10854-010-0187-7", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1024858280", 
          "https://doi.org/10.1007/s10854-010-0187-7"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/s11664-006-0007-2", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1013674153", 
          "https://doi.org/10.1007/s11664-006-0007-2"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2013-11-21", 
    "datePublishedReg": "2013-11-21", 
    "description": "Metal\u2013oxide\u2013semiconductor (MOS) capacitors incorporating HfO2 and SrHfON gate dielectrics were fabricated by magnetron sputtering. The interface quality, thermal stability, and electrical properties of the MOS capacitors have been investigated. Compared to HfO2 dielectric film, SrHfON dielectric film has thin interface layer with Si substrate, good thermal stability, and low leakage current densities. The dominant current conduction mechanisms (CCMs) of HfO2 film are Schottky emission or Poole\u2013Frenkel emission at low and high electric fields. The main CCMs of SrHfON film are Schottky emission or Poole\u2013Frenkel emission at low electric field, whereas, the CCMs are replaced by space charge limited current at high electric field.", 
    "genre": "article", 
    "id": "sg:pub.10.1007/s10853-013-7876-6", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1312116", 
        "issn": [
          "0022-2461", 
          "1573-4803"
        ], 
        "name": "Journal of Materials Science", 
        "publisher": "Springer Nature", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "4", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "49"
      }
    ], 
    "keywords": [
      "current conduction mechanism", 
      "Poole\u2013Frenkel emission", 
      "high electric field", 
      "electric field", 
      "dielectric films", 
      "Schottky emission", 
      "magnetron sputtering", 
      "low leakage current density", 
      "conduction mechanism", 
      "leakage current density", 
      "dominant current conduction mechanism", 
      "HfO2 dielectric films", 
      "thin interface layer", 
      "thermal stability", 
      "low electric field", 
      "good thermal stability", 
      "semiconductor capacitors", 
      "Si substrate", 
      "gate dielectric", 
      "HfO2 films", 
      "MOS capacitors", 
      "interface quality", 
      "interface layer", 
      "electrical properties", 
      "current density", 
      "thin films", 
      "space charge", 
      "films", 
      "capacitors", 
      "sputtering", 
      "HfO2", 
      "emission", 
      "stability", 
      "dielectric", 
      "field", 
      "layer", 
      "substrate", 
      "properties", 
      "density", 
      "charge", 
      "mechanism", 
      "quality"
    ], 
    "name": "Current conduction mechanisms in HfO2 and SrHfON thin films prepared by magnetron sputtering", 
    "pagination": "1875-1881", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1038729518"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1007/s10853-013-7876-6"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1007/s10853-013-7876-6", 
      "https://app.dimensions.ai/details/publication/pub.1038729518"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-11-24T20:57", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20221124/entities/gbq_results/article/article_602.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1007/s10853-013-7876-6"
  }
]
 

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This table displays all metadata directly associated to this object as RDF triples.

128 TRIPLES      21 PREDICATES      68 URIs      58 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1007/s10853-013-7876-6 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author N5437b11816ef4995b5e81024962cde70
4 schema:citation sg:pub.10.1007/s10854-010-0187-7
5 sg:pub.10.1007/s11664-006-0007-2
6 schema:datePublished 2013-11-21
7 schema:datePublishedReg 2013-11-21
8 schema:description Metal–oxide–semiconductor (MOS) capacitors incorporating HfO2 and SrHfON gate dielectrics were fabricated by magnetron sputtering. The interface quality, thermal stability, and electrical properties of the MOS capacitors have been investigated. Compared to HfO2 dielectric film, SrHfON dielectric film has thin interface layer with Si substrate, good thermal stability, and low leakage current densities. The dominant current conduction mechanisms (CCMs) of HfO2 film are Schottky emission or Poole–Frenkel emission at low and high electric fields. The main CCMs of SrHfON film are Schottky emission or Poole–Frenkel emission at low electric field, whereas, the CCMs are replaced by space charge limited current at high electric field.
9 schema:genre article
10 schema:isAccessibleForFree false
11 schema:isPartOf N54278a58ba9d4cb1b836f01cab3ad9e7
12 N8b011e63a7d440eb98d3b01da055be56
13 sg:journal.1312116
14 schema:keywords HfO2
15 HfO2 dielectric films
16 HfO2 films
17 MOS capacitors
18 Poole–Frenkel emission
19 Schottky emission
20 Si substrate
21 capacitors
22 charge
23 conduction mechanism
24 current conduction mechanism
25 current density
26 density
27 dielectric
28 dielectric films
29 dominant current conduction mechanism
30 electric field
31 electrical properties
32 emission
33 field
34 films
35 gate dielectric
36 good thermal stability
37 high electric field
38 interface layer
39 interface quality
40 layer
41 leakage current density
42 low electric field
43 low leakage current density
44 magnetron sputtering
45 mechanism
46 properties
47 quality
48 semiconductor capacitors
49 space charge
50 sputtering
51 stability
52 substrate
53 thermal stability
54 thin films
55 thin interface layer
56 schema:name Current conduction mechanisms in HfO2 and SrHfON thin films prepared by magnetron sputtering
57 schema:pagination 1875-1881
58 schema:productId N31568d24b9814554815c91e7f14e9503
59 N8ff00cc27e034c3b9680cb5d3d012dac
60 schema:sameAs https://app.dimensions.ai/details/publication/pub.1038729518
61 https://doi.org/10.1007/s10853-013-7876-6
62 schema:sdDatePublished 2022-11-24T20:57
63 schema:sdLicense https://scigraph.springernature.com/explorer/license/
64 schema:sdPublisher N503454186ce54ea1a93939b03842fdc5
65 schema:url https://doi.org/10.1007/s10853-013-7876-6
66 sgo:license sg:explorer/license/
67 sgo:sdDataset articles
68 rdf:type schema:ScholarlyArticle
69 N24b7810d34834957be9056181a46b2a8 rdf:first sg:person.014374301277.99
70 rdf:rest N696e514da0054ae98be46006225635a0
71 N31568d24b9814554815c91e7f14e9503 schema:name doi
72 schema:value 10.1007/s10853-013-7876-6
73 rdf:type schema:PropertyValue
74 N503454186ce54ea1a93939b03842fdc5 schema:name Springer Nature - SN SciGraph project
75 rdf:type schema:Organization
76 N54278a58ba9d4cb1b836f01cab3ad9e7 schema:issueNumber 4
77 rdf:type schema:PublicationIssue
78 N5437b11816ef4995b5e81024962cde70 rdf:first sg:person.011307534451.15
79 rdf:rest Nebb4a571effc4c7e860c2787ebd80f3a
80 N696e514da0054ae98be46006225635a0 rdf:first sg:person.012151422352.85
81 rdf:rest rdf:nil
82 N8b011e63a7d440eb98d3b01da055be56 schema:volumeNumber 49
83 rdf:type schema:PublicationVolume
84 N8ff00cc27e034c3b9680cb5d3d012dac schema:name dimensions_id
85 schema:value pub.1038729518
86 rdf:type schema:PropertyValue
87 Nebb4a571effc4c7e860c2787ebd80f3a rdf:first sg:person.016667225555.51
88 rdf:rest N24b7810d34834957be9056181a46b2a8
89 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
90 schema:name Engineering
91 rdf:type schema:DefinedTerm
92 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
93 schema:name Materials Engineering
94 rdf:type schema:DefinedTerm
95 sg:journal.1312116 schema:issn 0022-2461
96 1573-4803
97 schema:name Journal of Materials Science
98 schema:publisher Springer Nature
99 rdf:type schema:Periodical
100 sg:person.011307534451.15 schema:affiliation grid-institutes:grid.440588.5
101 schema:familyName Feng
102 schema:givenName Li-ping
103 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011307534451.15
104 rdf:type schema:Person
105 sg:person.012151422352.85 schema:affiliation grid-institutes:grid.440588.5
106 schema:familyName Liu
107 schema:givenName Zheng-tang
108 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012151422352.85
109 rdf:type schema:Person
110 sg:person.014374301277.99 schema:affiliation grid-institutes:grid.440588.5
111 schema:familyName Tian
112 schema:givenName Hao
113 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014374301277.99
114 rdf:type schema:Person
115 sg:person.016667225555.51 schema:affiliation grid-institutes:grid.440588.5
116 schema:familyName Li
117 schema:givenName Ning
118 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016667225555.51
119 rdf:type schema:Person
120 sg:pub.10.1007/s10854-010-0187-7 schema:sameAs https://app.dimensions.ai/details/publication/pub.1024858280
121 https://doi.org/10.1007/s10854-010-0187-7
122 rdf:type schema:CreativeWork
123 sg:pub.10.1007/s11664-006-0007-2 schema:sameAs https://app.dimensions.ai/details/publication/pub.1013674153
124 https://doi.org/10.1007/s11664-006-0007-2
125 rdf:type schema:CreativeWork
126 grid-institutes:grid.440588.5 schema:alternateName State Key Lab of Solidification Processing, College of Materials Science and Engineering, Northwestern Polytechnical University, 710072, Xi’an, Shaanxi, China
127 schema:name State Key Lab of Solidification Processing, College of Materials Science and Engineering, Northwestern Polytechnical University, 710072, Xi’an, Shaanxi, China
128 rdf:type schema:Organization
 




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