Influence of ion energy on damage induced by Au-ion implantation in silicon carbide single crystals View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2011-05-07

AUTHORS

Aurélie Gentils, Florence Linez, Aurélien Canizarès, Patrick Simon, Lionel Thomé, Marie-France Barthe

ABSTRACT

This article reports on the influence of the ion energy on the damage induced by Au-ion implantation in silicon carbide single crystals. 6H-SiC samples were implanted with Au ions at room temperature at two different energies: 4 and 20 MeV. Both Rutherford Backscattering spectrometry in channelling geometry (RBS/C) and Raman spectroscopy were used to probe the ion implantation-induced damage. Results show that the accumulated damage increases with the fluence up to the amorphization state. RBS/C data indicate that 4-MeV implantation induces more damage than 20-MeV implantation at a given fluence. This effect is attributed to nuclear collisions since the amount of damage is identical at 4 or 20 MeV when the fluence is rescaled in dpa. Surprisingly, Raman data detect more damage for 20-MeV implantation than for 4-MeV implantation at low fluence (below 1013 cm−2) where point defects are likely formed. More... »

PAGES

6390-6395

References to SciGraph publications

  • 2009-07-04. Multi-step damage accumulation in irradiated crystals in APPLIED PHYSICS A
  • 1985. The Stopping and Range of Ions in Matter in TREATISE ON HEAVY-ION SCIENCE
  • 1996-03. Analysis of ion beam induced damage and amorphization of 6H-SiC by raman scattering in JOURNAL OF ELECTRONIC MATERIALS
  • Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1007/s10853-011-5587-4

    DOI

    http://dx.doi.org/10.1007/s10853-011-5587-4

    DIMENSIONS

    https://app.dimensions.ai/details/publication/pub.1018157520


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