Strain and stress build-up in He-implanted UO2 single crystals: an X-ray diffraction study View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2011-07-01

AUTHORS

Aurélien Debelle, Alexandre Boulle, Frédérico Garrido, Lionel Thomé

ABSTRACT

The strain and stress build-up in 20-keV He-implanted UO2 single crystals have been determined by means of X-ray diffraction through reciprocal space mapping, with the use of a model dedicated to the analysis of the strain/stress state of ion-irradiated materials. Results indicate that the undamaged part of the crystals exhibits no strain or stress; on the other hand, the implanted layer undergoes a tensile strain directed along the normal to the surface of the crystals and a compressive in-plane stress. The build-up of both strain and stress with He fluence exhibits a two-step process: (i) a progressive increase up to a maximum level of ~1% for the strain and ~−2.8 GPa for the stress, followed by (ii) a dramatic decrease. The origin of the strain and stress build-up is the formation of both self-interstitial defects and small He-vacancy clusters. The strain, and stress relief is tentatively attributed to the formation of extended defects (such as dislocations) that induce a plastic relaxation. More... »

PAGES

4683-4689

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s10853-011-5375-1

DOI

http://dx.doi.org/10.1007/s10853-011-5375-1

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1051882581


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