Confined acoustic phonons in ultrathin SOI layers View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2006-07

AUTHORS

L. Donetti, F. Gámiz, J. B. Roldán, A. Godoy

ABSTRACT

We try to reproduce experimental mobility curves in ultrathin silicon-on-insulator inversion layers using a Monte Carlo simulator and a bulk model for the electron scattering with acoustic phonons. While it is possible to reproduce the experimental behavior for the thicker samples, the electron mobility is strongly overestimated when the thinnest samples are considered. The mobility curves for the thinnest samples can be reproduced using the same model if the deformation potential parameter increases as the silicon thickness decreases. This fact shows that acoustic phonons are also confined in ultrathin silicon on insulator layers. We then study confined phonons in single and three layer structures in order to give a physical motivation to the increase of acoustic phonon scattering rate for in ultrathin silicon layers. More... »

PAGES

199-203

Journal

TITLE

Journal of Computational Electronics

ISSUE

2-3

VOLUME

5

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s10825-006-8844-z

DOI

http://dx.doi.org/10.1007/s10825-006-8844-z

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1029422033


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "University of Granada", 
          "id": "https://www.grid.ac/institutes/grid.4489.1", 
          "name": [
            "Departamento de Electr\u00f3nica y Tecnolog\u00eda de Computadores, Universidad de Granada, 18071, Granada, Spain"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Donetti", 
        "givenName": "L.", 
        "id": "sg:person.013200124244.57", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013200124244.57"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "University of Granada", 
          "id": "https://www.grid.ac/institutes/grid.4489.1", 
          "name": [
            "Departamento de Electr\u00f3nica y Tecnolog\u00eda de Computadores, Universidad de Granada, 18071, Granada, Spain"
          ], 
          "type": "Organization"
        }, 
        "familyName": "G\u00e1miz", 
        "givenName": "F.", 
        "id": "sg:person.011233241475.94", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011233241475.94"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "University of Granada", 
          "id": "https://www.grid.ac/institutes/grid.4489.1", 
          "name": [
            "Departamento de Electr\u00f3nica y Tecnolog\u00eda de Computadores, Universidad de Granada, 18071, Granada, Spain"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Rold\u00e1n", 
        "givenName": "J. B.", 
        "id": "sg:person.015661624507.70", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015661624507.70"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "University of Granada", 
          "id": "https://www.grid.ac/institutes/grid.4489.1", 
          "name": [
            "Departamento de Electr\u00f3nica y Tecnolog\u00eda de Computadores, Universidad de Granada, 18071, Granada, Spain"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Godoy", 
        "givenName": "A.", 
        "id": "sg:person.014707352761.87", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014707352761.87"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "https://doi.org/10.1002/pssc.200405313", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1008305882"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1088/0268-1242/10/6/012", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1031119416"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1002/pssb.2221830109", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1052222805"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.1358321", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057698591"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.1558223", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057719868"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.1571227", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057721523"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.371684", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1058006086"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrevb.51.9930", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060576990"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrevb.51.9930", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060576990"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrevb.65.205315", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060603252"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrevb.65.205315", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060603252"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/revmodphys.54.437", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060839010"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/revmodphys.54.437", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060839010"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2006-07", 
    "datePublishedReg": "2006-07-01", 
    "description": "We try to reproduce experimental mobility curves in ultrathin silicon-on-insulator inversion layers using a Monte Carlo simulator and a bulk model for the electron scattering with acoustic phonons. While it is possible to reproduce the experimental behavior for the thicker samples, the electron mobility is strongly overestimated when the thinnest samples are considered. The mobility curves for the thinnest samples can be reproduced using the same model if the deformation potential parameter increases as the silicon thickness decreases. This fact shows that acoustic phonons are also confined in ultrathin silicon on insulator layers. We then study confined phonons in single and three layer structures in order to give a physical motivation to the increase of acoustic phonon scattering rate for in ultrathin silicon layers.", 
    "genre": "research_article", 
    "id": "sg:pub.10.1007/s10825-006-8844-z", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1036340", 
        "issn": [
          "1569-8025", 
          "1572-8137"
        ], 
        "name": "Journal of Computational Electronics", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "2-3", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "5"
      }
    ], 
    "name": "Confined acoustic phonons in ultrathin SOI layers", 
    "pagination": "199-203", 
    "productId": [
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1007/s10825-006-8844-z"
        ]
      }, 
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "8c295a0ca08a2a5d6c4a10fbeaaa21491ed1e248dc1efd4bda228bc8f40882c6"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1029422033"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1007/s10825-006-8844-z", 
      "https://app.dimensions.ai/details/publication/pub.1029422033"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2019-04-15T09:12", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000376_0000000376/records_56159_00000001.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "http://link.springer.com/10.1007%2Fs10825-006-8844-z"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

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This table displays all metadata directly associated to this object as RDF triples.

112 TRIPLES      21 PREDICATES      37 URIs      19 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1007/s10825-006-8844-z schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author Nca1c553f0d864d3a8a0ec7ece51e8956
4 schema:citation https://doi.org/10.1002/pssb.2221830109
5 https://doi.org/10.1002/pssc.200405313
6 https://doi.org/10.1063/1.1358321
7 https://doi.org/10.1063/1.1558223
8 https://doi.org/10.1063/1.1571227
9 https://doi.org/10.1063/1.371684
10 https://doi.org/10.1088/0268-1242/10/6/012
11 https://doi.org/10.1103/physrevb.51.9930
12 https://doi.org/10.1103/physrevb.65.205315
13 https://doi.org/10.1103/revmodphys.54.437
14 schema:datePublished 2006-07
15 schema:datePublishedReg 2006-07-01
16 schema:description We try to reproduce experimental mobility curves in ultrathin silicon-on-insulator inversion layers using a Monte Carlo simulator and a bulk model for the electron scattering with acoustic phonons. While it is possible to reproduce the experimental behavior for the thicker samples, the electron mobility is strongly overestimated when the thinnest samples are considered. The mobility curves for the thinnest samples can be reproduced using the same model if the deformation potential parameter increases as the silicon thickness decreases. This fact shows that acoustic phonons are also confined in ultrathin silicon on insulator layers. We then study confined phonons in single and three layer structures in order to give a physical motivation to the increase of acoustic phonon scattering rate for in ultrathin silicon layers.
17 schema:genre research_article
18 schema:inLanguage en
19 schema:isAccessibleForFree false
20 schema:isPartOf N24fe8ec37b664452981573ff40805a7e
21 N3a8775a4506241688d8677fa23cf0a3b
22 sg:journal.1036340
23 schema:name Confined acoustic phonons in ultrathin SOI layers
24 schema:pagination 199-203
25 schema:productId N047bf00f8aa74e2186e5ed7ebf871524
26 N1dc4db7ab20b41b598313ec27a69b914
27 Ncf51d8654430429d95eeaea55b8c2f73
28 schema:sameAs https://app.dimensions.ai/details/publication/pub.1029422033
29 https://doi.org/10.1007/s10825-006-8844-z
30 schema:sdDatePublished 2019-04-15T09:12
31 schema:sdLicense https://scigraph.springernature.com/explorer/license/
32 schema:sdPublisher N6435adb9d7ac4e988e9754134d7bf139
33 schema:url http://link.springer.com/10.1007%2Fs10825-006-8844-z
34 sgo:license sg:explorer/license/
35 sgo:sdDataset articles
36 rdf:type schema:ScholarlyArticle
37 N047bf00f8aa74e2186e5ed7ebf871524 schema:name dimensions_id
38 schema:value pub.1029422033
39 rdf:type schema:PropertyValue
40 N12b08fd309b2430da215b3459c78fa09 rdf:first sg:person.011233241475.94
41 rdf:rest N35e07609997642d8b20360dc55b3f700
42 N1dc4db7ab20b41b598313ec27a69b914 schema:name readcube_id
43 schema:value 8c295a0ca08a2a5d6c4a10fbeaaa21491ed1e248dc1efd4bda228bc8f40882c6
44 rdf:type schema:PropertyValue
45 N24fe8ec37b664452981573ff40805a7e schema:issueNumber 2-3
46 rdf:type schema:PublicationIssue
47 N35e07609997642d8b20360dc55b3f700 rdf:first sg:person.015661624507.70
48 rdf:rest N999812cf8cc54e0da24e4ae871df4932
49 N3a8775a4506241688d8677fa23cf0a3b schema:volumeNumber 5
50 rdf:type schema:PublicationVolume
51 N6435adb9d7ac4e988e9754134d7bf139 schema:name Springer Nature - SN SciGraph project
52 rdf:type schema:Organization
53 N999812cf8cc54e0da24e4ae871df4932 rdf:first sg:person.014707352761.87
54 rdf:rest rdf:nil
55 Nca1c553f0d864d3a8a0ec7ece51e8956 rdf:first sg:person.013200124244.57
56 rdf:rest N12b08fd309b2430da215b3459c78fa09
57 Ncf51d8654430429d95eeaea55b8c2f73 schema:name doi
58 schema:value 10.1007/s10825-006-8844-z
59 rdf:type schema:PropertyValue
60 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
61 schema:name Engineering
62 rdf:type schema:DefinedTerm
63 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
64 schema:name Materials Engineering
65 rdf:type schema:DefinedTerm
66 sg:journal.1036340 schema:issn 1569-8025
67 1572-8137
68 schema:name Journal of Computational Electronics
69 rdf:type schema:Periodical
70 sg:person.011233241475.94 schema:affiliation https://www.grid.ac/institutes/grid.4489.1
71 schema:familyName Gámiz
72 schema:givenName F.
73 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011233241475.94
74 rdf:type schema:Person
75 sg:person.013200124244.57 schema:affiliation https://www.grid.ac/institutes/grid.4489.1
76 schema:familyName Donetti
77 schema:givenName L.
78 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013200124244.57
79 rdf:type schema:Person
80 sg:person.014707352761.87 schema:affiliation https://www.grid.ac/institutes/grid.4489.1
81 schema:familyName Godoy
82 schema:givenName A.
83 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014707352761.87
84 rdf:type schema:Person
85 sg:person.015661624507.70 schema:affiliation https://www.grid.ac/institutes/grid.4489.1
86 schema:familyName Roldán
87 schema:givenName J. B.
88 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015661624507.70
89 rdf:type schema:Person
90 https://doi.org/10.1002/pssb.2221830109 schema:sameAs https://app.dimensions.ai/details/publication/pub.1052222805
91 rdf:type schema:CreativeWork
92 https://doi.org/10.1002/pssc.200405313 schema:sameAs https://app.dimensions.ai/details/publication/pub.1008305882
93 rdf:type schema:CreativeWork
94 https://doi.org/10.1063/1.1358321 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057698591
95 rdf:type schema:CreativeWork
96 https://doi.org/10.1063/1.1558223 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057719868
97 rdf:type schema:CreativeWork
98 https://doi.org/10.1063/1.1571227 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057721523
99 rdf:type schema:CreativeWork
100 https://doi.org/10.1063/1.371684 schema:sameAs https://app.dimensions.ai/details/publication/pub.1058006086
101 rdf:type schema:CreativeWork
102 https://doi.org/10.1088/0268-1242/10/6/012 schema:sameAs https://app.dimensions.ai/details/publication/pub.1031119416
103 rdf:type schema:CreativeWork
104 https://doi.org/10.1103/physrevb.51.9930 schema:sameAs https://app.dimensions.ai/details/publication/pub.1060576990
105 rdf:type schema:CreativeWork
106 https://doi.org/10.1103/physrevb.65.205315 schema:sameAs https://app.dimensions.ai/details/publication/pub.1060603252
107 rdf:type schema:CreativeWork
108 https://doi.org/10.1103/revmodphys.54.437 schema:sameAs https://app.dimensions.ai/details/publication/pub.1060839010
109 rdf:type schema:CreativeWork
110 https://www.grid.ac/institutes/grid.4489.1 schema:alternateName University of Granada
111 schema:name Departamento de Electrónica y Tecnología de Computadores, Universidad de Granada, 18071, Granada, Spain
112 rdf:type schema:Organization
 




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