Ontology type: schema:ScholarlyArticle
2006-07
AUTHORSL. Donetti, F. Gámiz, J. B. Roldán, A. Godoy
ABSTRACTWe try to reproduce experimental mobility curves in ultrathin silicon-on-insulator inversion layers using a Monte Carlo simulator and a bulk model for the electron scattering with acoustic phonons. While it is possible to reproduce the experimental behavior for the thicker samples, the electron mobility is strongly overestimated when the thinnest samples are considered. The mobility curves for the thinnest samples can be reproduced using the same model if the deformation potential parameter increases as the silicon thickness decreases. This fact shows that acoustic phonons are also confined in ultrathin silicon on insulator layers. We then study confined phonons in single and three layer structures in order to give a physical motivation to the increase of acoustic phonon scattering rate for in ultrathin silicon layers. More... »
PAGES199-203
http://scigraph.springernature.com/pub.10.1007/s10825-006-8844-z
DOIhttp://dx.doi.org/10.1007/s10825-006-8844-z
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