Device and Design Optimization for AlGaN/GaN X-Band-Power-Amplifiers with High Efficiency View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2010-03

AUTHORS

Jutta Kühn, Friedbert van Raay, Rüdiger Quay, Rudolf Kiefer, Michael Mikulla, Matthias Seelmann-Eggebert, Wolfgang Bronner, Michael Schlechtweg, Oliver Ambacher, Manfred Thumm

ABSTRACT

The design, realization and characterization of dual-stage X-band high-power and highly-efficient monolithic microwave integrated circuit (MMIC) power amplifiers (PAs) with AlGaN/GaN high electronic mobility transistors (HEMTs) is presented. These high power amplifiers (HPAs) are based on a precise investigation of circuit-relevant HEMT behavior using two different field-plate variants and its effects on PA performance as well as optimization of HPA driver stage size which also has a deep impact on the entire HPA. Two broadband (3 GHz) MMICs with different field-plate variants and two narrowband (1 GHz) PAs with different driver- to final-stage gate-width ratio are realized with a maximum output power of 19-23 W, a maximum power-added efficiency (PAE) of ≥40%, and an associated power gain of 17 dB at X-band. Furthermore, two 1 mm test transistors of the same technology with the mentioned field-plate variants and a 1 mm test MMIC support VSWR-ratio tests of 6:1 and 4:1, respectively. More... »

PAGES

367-379

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s10762-009-9583-6

DOI

http://dx.doi.org/10.1007/s10762-009-9583-6

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1032128519


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