Fe implantation induced lattice defects and their recovery in GaN View Full Text


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Article Info

DATE

2021-12-21

AUTHORS

K. Bharuth-Ram, D. Naidoo, V. Adoons, C. Ronning

ABSTRACT

A GaN thin film grown on sapphire substrate was implanted with 57Fe and 56Fe ions with energies of 60 keV, 160 keV and 370 keV and fluences selected to achieve a homogeneous concentration profile of approximately 2.6 at. % in the film. Implantation induced lattice damage was tracked with conversion electron Mössbauer spectroscopy (CEMS) after annealing the sample up to 900 °C. The spectral component due to Fe in lattice damage shows significant decrease on annealing above 700 °C, accompanied by a corresponding increase in the paramagnetic doublet component attributed to Fe substituting Ga in the wurtzite GaN lattice (FeGa). After annealing at 900 °C, FeGa accounts for 75% of the spectral area, in good agreement with the substitutional FeGa fraction (80%) observed in emission channeling measurements on Fe implanted into GaN at extremely dilute concentration. More... »

PAGES

2

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Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s10751-021-01785-9

DOI

http://dx.doi.org/10.1007/s10751-021-01785-9

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https://app.dimensions.ai/details/publication/pub.1144049890


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