Stress distribution affected by nanostructures near a surface crack on a silicon chip View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2017-08

AUTHORS

Meng-Kao Yeh, Yi-Kung Shao, J. Andrew Yeh, Chuck Hsu

ABSTRACT

During the thinning and machining processes, surface defects or cracks are easily induced on a silicon chip. The defects or cracks may cause stress concentration and become one of the failure sources for silicon chips. One of our previous papers reported that the stress concentration at the crack tip on a silicon chip with nanostructure was greatly reduced for the case of four-point bending. In this paper, the finite element analysis was used to further study the effect of nanostructures on the stress distribution near the surface crack for a silicon chip. Since the stress distribution near the surface crack was our main concern for a chip under four-point bending, nanostructures were introduced in the area near the crack on the chip surface in the analysis for computational efficiency. The spacing and depth of the nanostructure, and the crack depth on the silicon chip surface were varied to access their effects on the stress distributions near the crack on the silicon chip. More... »

PAGES

2791-2797

Journal

TITLE

Acta Mechanica

ISSUE

8

VOLUME

228

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s00707-015-1516-y

DOI

http://dx.doi.org/10.1007/s00707-015-1516-y

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1037574865


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "National Tsing Hua University", 
          "id": "https://www.grid.ac/institutes/grid.38348.34", 
          "name": [
            "Department of Power Mechanical Engineering, National Tsing Hua University, 30013, Hsinchu, Taiwan"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Yeh", 
        "givenName": "Meng-Kao", 
        "id": "sg:person.015562150512.17", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015562150512.17"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "National Tsing Hua University", 
          "id": "https://www.grid.ac/institutes/grid.38348.34", 
          "name": [
            "Department of Power Mechanical Engineering, National Tsing Hua University, 30013, Hsinchu, Taiwan"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Shao", 
        "givenName": "Yi-Kung", 
        "id": "sg:person.011772417123.11", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011772417123.11"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "National Tsing Hua University", 
          "id": "https://www.grid.ac/institutes/grid.38348.34", 
          "name": [
            "Institute of NanoEngineering and MicroSystems, National Tsing Hua University, 30013, Hsinchu, Taiwan"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Yeh", 
        "givenName": "J. Andrew", 
        "id": "sg:person.0640753336.15", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0640753336.15"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "name": [
            "Innovation Technology Research Center, Sino-American Silicon Products Inc., 30075, Hsinchu, Taiwan"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Hsu", 
        "givenName": "Chuck", 
        "id": "sg:person.013365360123.48", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013365360123.48"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "https://doi.org/10.1016/j.proeng.2014.06.335", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1044506937"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1080/02533839.1999.9670467", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1046937824"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/nl201083t", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1056218595"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/nl201083t", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1056218595"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.361102", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057984870"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2017-08", 
    "datePublishedReg": "2017-08-01", 
    "description": "During the thinning and machining processes, surface defects or cracks are easily induced on a silicon chip. The defects or cracks may cause stress concentration and become one of the failure sources for silicon chips. One of our previous papers reported that the stress concentration at the crack tip on a silicon chip with nanostructure was greatly reduced for the case of four-point bending. In this paper, the finite element analysis was used to further study the effect of nanostructures on the stress distribution near the surface crack for a silicon chip. Since the stress distribution near the surface crack was our main concern for a chip under four-point bending, nanostructures were introduced in the area near the crack on the chip surface in the analysis for computational efficiency. The spacing and depth of the nanostructure, and the crack depth on the silicon chip surface were varied to access their effects on the stress distributions near the crack on the silicon chip.", 
    "genre": "research_article", 
    "id": "sg:pub.10.1007/s00707-015-1516-y", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1044151", 
        "issn": [
          "0001-5970", 
          "1619-6937"
        ], 
        "name": "Acta Mechanica", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "8", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "228"
      }
    ], 
    "name": "Stress distribution affected by nanostructures near a surface crack on a silicon chip", 
    "pagination": "2791-2797", 
    "productId": [
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "b2fe4a331549cebea4bc078f7d4ea8299bc268d8f9893f0075b22c0c6e5d4be0"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1007/s00707-015-1516-y"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1037574865"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1007/s00707-015-1516-y", 
      "https://app.dimensions.ai/details/publication/pub.1037574865"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2019-04-11T12:36", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000363_0000000363/records_70031_00000001.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://link.springer.com/10.1007%2Fs00707-015-1516-y"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1007/s00707-015-1516-y'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1007/s00707-015-1516-y'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1007/s00707-015-1516-y'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1007/s00707-015-1516-y'


 

This table displays all metadata directly associated to this object as RDF triples.

97 TRIPLES      21 PREDICATES      31 URIs      19 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1007/s00707-015-1516-y schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author Nac954ec87836496ba1de49b564fcdbd1
4 schema:citation https://doi.org/10.1016/j.proeng.2014.06.335
5 https://doi.org/10.1021/nl201083t
6 https://doi.org/10.1063/1.361102
7 https://doi.org/10.1080/02533839.1999.9670467
8 schema:datePublished 2017-08
9 schema:datePublishedReg 2017-08-01
10 schema:description During the thinning and machining processes, surface defects or cracks are easily induced on a silicon chip. The defects or cracks may cause stress concentration and become one of the failure sources for silicon chips. One of our previous papers reported that the stress concentration at the crack tip on a silicon chip with nanostructure was greatly reduced for the case of four-point bending. In this paper, the finite element analysis was used to further study the effect of nanostructures on the stress distribution near the surface crack for a silicon chip. Since the stress distribution near the surface crack was our main concern for a chip under four-point bending, nanostructures were introduced in the area near the crack on the chip surface in the analysis for computational efficiency. The spacing and depth of the nanostructure, and the crack depth on the silicon chip surface were varied to access their effects on the stress distributions near the crack on the silicon chip.
11 schema:genre research_article
12 schema:inLanguage en
13 schema:isAccessibleForFree false
14 schema:isPartOf Na923a9a8b5ae4ff589faa022ccf7dd30
15 Nbf94913af6904484a9bd8d89b94ff311
16 sg:journal.1044151
17 schema:name Stress distribution affected by nanostructures near a surface crack on a silicon chip
18 schema:pagination 2791-2797
19 schema:productId N0f440719bef345aa8bb76f7743a0b6c2
20 N6891b0566d934094b5033f31cf188bc6
21 Nb19f8a1af1f44ddb9b6738864a6ccd6f
22 schema:sameAs https://app.dimensions.ai/details/publication/pub.1037574865
23 https://doi.org/10.1007/s00707-015-1516-y
24 schema:sdDatePublished 2019-04-11T12:36
25 schema:sdLicense https://scigraph.springernature.com/explorer/license/
26 schema:sdPublisher Nb5ad899feb354dcfa220448776d09314
27 schema:url https://link.springer.com/10.1007%2Fs00707-015-1516-y
28 sgo:license sg:explorer/license/
29 sgo:sdDataset articles
30 rdf:type schema:ScholarlyArticle
31 N0f440719bef345aa8bb76f7743a0b6c2 schema:name readcube_id
32 schema:value b2fe4a331549cebea4bc078f7d4ea8299bc268d8f9893f0075b22c0c6e5d4be0
33 rdf:type schema:PropertyValue
34 N6891b0566d934094b5033f31cf188bc6 schema:name doi
35 schema:value 10.1007/s00707-015-1516-y
36 rdf:type schema:PropertyValue
37 N800fc66f14de46068fe511c348e94968 rdf:first sg:person.013365360123.48
38 rdf:rest rdf:nil
39 Na923a9a8b5ae4ff589faa022ccf7dd30 schema:volumeNumber 228
40 rdf:type schema:PublicationVolume
41 Nac954ec87836496ba1de49b564fcdbd1 rdf:first sg:person.015562150512.17
42 rdf:rest Ndda0d813c21741a59aafac2a9140827e
43 Nb19f8a1af1f44ddb9b6738864a6ccd6f schema:name dimensions_id
44 schema:value pub.1037574865
45 rdf:type schema:PropertyValue
46 Nb5ad899feb354dcfa220448776d09314 schema:name Springer Nature - SN SciGraph project
47 rdf:type schema:Organization
48 Nb9cd4d4b5e3742b7ad42707fa0661f17 schema:name Innovation Technology Research Center, Sino-American Silicon Products Inc., 30075, Hsinchu, Taiwan
49 rdf:type schema:Organization
50 Nbf94913af6904484a9bd8d89b94ff311 schema:issueNumber 8
51 rdf:type schema:PublicationIssue
52 Ndda0d813c21741a59aafac2a9140827e rdf:first sg:person.011772417123.11
53 rdf:rest Ndf5afe9d0def4a0e9194e3552f2f053d
54 Ndf5afe9d0def4a0e9194e3552f2f053d rdf:first sg:person.0640753336.15
55 rdf:rest N800fc66f14de46068fe511c348e94968
56 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
57 schema:name Engineering
58 rdf:type schema:DefinedTerm
59 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
60 schema:name Materials Engineering
61 rdf:type schema:DefinedTerm
62 sg:journal.1044151 schema:issn 0001-5970
63 1619-6937
64 schema:name Acta Mechanica
65 rdf:type schema:Periodical
66 sg:person.011772417123.11 schema:affiliation https://www.grid.ac/institutes/grid.38348.34
67 schema:familyName Shao
68 schema:givenName Yi-Kung
69 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011772417123.11
70 rdf:type schema:Person
71 sg:person.013365360123.48 schema:affiliation Nb9cd4d4b5e3742b7ad42707fa0661f17
72 schema:familyName Hsu
73 schema:givenName Chuck
74 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013365360123.48
75 rdf:type schema:Person
76 sg:person.015562150512.17 schema:affiliation https://www.grid.ac/institutes/grid.38348.34
77 schema:familyName Yeh
78 schema:givenName Meng-Kao
79 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015562150512.17
80 rdf:type schema:Person
81 sg:person.0640753336.15 schema:affiliation https://www.grid.ac/institutes/grid.38348.34
82 schema:familyName Yeh
83 schema:givenName J. Andrew
84 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0640753336.15
85 rdf:type schema:Person
86 https://doi.org/10.1016/j.proeng.2014.06.335 schema:sameAs https://app.dimensions.ai/details/publication/pub.1044506937
87 rdf:type schema:CreativeWork
88 https://doi.org/10.1021/nl201083t schema:sameAs https://app.dimensions.ai/details/publication/pub.1056218595
89 rdf:type schema:CreativeWork
90 https://doi.org/10.1063/1.361102 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057984870
91 rdf:type schema:CreativeWork
92 https://doi.org/10.1080/02533839.1999.9670467 schema:sameAs https://app.dimensions.ai/details/publication/pub.1046937824
93 rdf:type schema:CreativeWork
94 https://www.grid.ac/institutes/grid.38348.34 schema:alternateName National Tsing Hua University
95 schema:name Department of Power Mechanical Engineering, National Tsing Hua University, 30013, Hsinchu, Taiwan
96 Institute of NanoEngineering and MicroSystems, National Tsing Hua University, 30013, Hsinchu, Taiwan
97 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...