Crystalline Inclusions Formed in C+N+BF2 Coimplanted on Silicon (111) View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2004-04

AUTHORS

Arturo Ponce, Francisco M. Morales, Sergio I. Molina, Lucía Barbadillo, Manuel Cervera, Marí J. Hernández, Pedro Rodríguez, Juan Piqueras

ABSTRACT

In the present work, high-doses (1017–1018 cm−2) of carbon, nitrogen, and boron (BF2+) ions were coimplanted on silicon (111) substrates at 21, 25 and 77 keV, respectively. Two series of samples have been implanted (series A and B) and subsequently annealed. Series A samples have been implanted at room temperature and treated one minute by rapid thermal annealing (RTA) and 3 hours at 1200 °C. Series B samples have been implanted at 600 °C and subsequently annealed at 1200 °C during 3 hours. The annealing in both series has been carried out in N2 at atmospheric pressures. The structure of the buried layers has been determined by conventional and high resolution transmission electron microscopy (CTEM and HRTEM). Polycrystalline silicon and new crystalline phases are observed by electron diffraction patterns. The polycrystalline silicon inclusions have been confirmed from analysis of HRTEM images. More... »

PAGES

165-169

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s00604-003-0147-5

DOI

http://dx.doi.org/10.1007/s00604-003-0147-5

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1050512321


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