Fabrication, constructions and electrical property of Si2Sb2Te5 electrical probe storage system View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2009-09

AUTHORS

Yanbo Liu, Zhitang Song, Ting Zhang, Guoxin Zhang, Jing Zhang, Weimin Zhou, Jianpin Zhang

ABSTRACT

A Si2Sb2Te5 (SST) memory array with density of 4 Gbit/in.2 was fabricated by ultraviolet-imprint lithography. The contacted area of SST with electrodes in memory cell was 0.0392 μm2. Crystal structure transformation of SST film was studied. Adhesion strength of sample interface was tested by Nano Indenter®. Electrical property of SST electrical probe storage (EPS) system was measured. Resistance of as-deposited SST film was about four orders of magnitude higher than that of the one annealed at 350°C. Resistance of EPS cell dropped about two orders from high-resistance state to low-resistance state. More... »

PAGES

1389-1393

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s00542-009-0889-z

DOI

http://dx.doi.org/10.1007/s00542-009-0889-z

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1021974373


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0906", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Electrical and Electronic Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Shanghai Institute of Microsystem and Information Technology", 
          "id": "https://www.grid.ac/institutes/grid.458459.1", 
          "name": [
            "Laboratory of Nanotechnology, Shanghai Nanotechnology Promotion Center, 200237, Shanghai, China", 
            "Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, China"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Liu", 
        "givenName": "Yanbo", 
        "id": "sg:person.014747233736.16", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014747233736.16"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Shanghai Institute of Microsystem and Information Technology", 
          "id": "https://www.grid.ac/institutes/grid.458459.1", 
          "name": [
            "Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, China"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Song", 
        "givenName": "Zhitang", 
        "id": "sg:person.015547052475.66", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015547052475.66"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Shanghai Institute of Microsystem and Information Technology", 
          "id": "https://www.grid.ac/institutes/grid.458459.1", 
          "name": [
            "Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, China"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Zhang", 
        "givenName": "Ting", 
        "id": "sg:person.010633743700.61", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010633743700.61"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Shanghai Institute of Applied Physics", 
          "id": "https://www.grid.ac/institutes/grid.450275.1", 
          "name": [
            "Shanghai Institute of Applied Physics, Chinese Academy of Sciences, 201800, Shanghai, China"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Zhang", 
        "givenName": "Guoxin", 
        "id": "sg:person.01153154634.96", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01153154634.96"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Shanghai Nanotechnology Promotion Center", 
          "id": "https://www.grid.ac/institutes/grid.484633.e", 
          "name": [
            "Laboratory of Nanotechnology, Shanghai Nanotechnology Promotion Center, 200237, Shanghai, China"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Zhang", 
        "givenName": "Jing", 
        "id": "sg:person.013607572077.11", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013607572077.11"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Shanghai Nanotechnology Promotion Center", 
          "id": "https://www.grid.ac/institutes/grid.484633.e", 
          "name": [
            "Laboratory of Nanotechnology, Shanghai Nanotechnology Promotion Center, 200237, Shanghai, China"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Zhou", 
        "givenName": "Weimin", 
        "id": "sg:person.016030673711.06", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016030673711.06"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Shanghai Nanotechnology Promotion Center", 
          "id": "https://www.grid.ac/institutes/grid.484633.e", 
          "name": [
            "Laboratory of Nanotechnology, Shanghai Nanotechnology Promotion Center, 200237, Shanghai, China"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Zhang", 
        "givenName": "Jianpin", 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "https://doi.org/10.1016/j.scriptamat.2008.01.048", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1003996465"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.mee.2006.11.009", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1006832981"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1088/0022-3727/37/11/r01", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1010341090"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.sse.2007.03.016", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1011564531"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/nmat1350", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1012684034", 
          "https://doi.org/10.1038/nmat1350"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/nmat1350", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1012684034", 
          "https://doi.org/10.1038/nmat1350"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.mee.2006.07.004", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1021412620"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/nmat2009", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1034064960", 
          "https://doi.org/10.1038/nmat2009"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.sse.2005.10.046", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1040040314"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/nature00792", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1051269288", 
          "https://doi.org/10.1038/nature00792"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/nature00792", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1051269288", 
          "https://doi.org/10.1038/nature00792"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/s00339-004-3176-y", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1052842109", 
          "https://doi.org/10.1007/s00339-004-3176-y"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.1604172", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057724896"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.1608482", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057725376"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.1834718", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057825678"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.2709617", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057858322"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.2805633", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057869060"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.2898216", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057880123"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1109/tnano.2002.1005425", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1061711731"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1109/tnano.2002.1005425", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1061711731"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1109/tnano.2002.1005425", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1061711731"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1143/jjap.42.404", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1063070142"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1143/jjap.46.l247", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1063080270"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2009-09", 
    "datePublishedReg": "2009-09-01", 
    "description": "A Si2Sb2Te5 (SST) memory array with density of 4 Gbit/in.2 was fabricated by ultraviolet-imprint lithography. The contacted area of SST with electrodes in memory cell was 0.0392 \u03bcm2. Crystal structure transformation of SST film was studied. Adhesion strength of sample interface was tested by Nano Indenter\u00ae. Electrical property of SST electrical probe storage (EPS) system was measured. Resistance of as-deposited SST film was about four orders of magnitude higher than that of the one annealed at 350\u00b0C. Resistance of EPS cell dropped about two orders from high-resistance state to low-resistance state.", 
    "genre": "research_article", 
    "id": "sg:pub.10.1007/s00542-009-0889-z", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": false, 
    "isFundedItemOf": [
      {
        "id": "sg:grant.4968574", 
        "type": "MonetaryGrant"
      }
    ], 
    "isPartOf": [
      {
        "id": "sg:journal.1294787", 
        "issn": [
          "0946-7076", 
          "1432-1858"
        ], 
        "name": "Microsystem Technologies", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "9", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "15"
      }
    ], 
    "name": "Fabrication, constructions and electrical property of Si2Sb2Te5 electrical probe storage system", 
    "pagination": "1389-1393", 
    "productId": [
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "68b0d03ae0826ead0697743efa6d595b44d002ad1aed5a0e4a39204e18eb21c3"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1007/s00542-009-0889-z"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1021974373"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1007/s00542-009-0889-z", 
      "https://app.dimensions.ai/details/publication/pub.1021974373"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2019-04-11T14:34", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000373_0000000373/records_13109_00000000.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "http://link.springer.com/10.1007%2Fs00542-009-0889-z"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1007/s00542-009-0889-z'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1007/s00542-009-0889-z'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1007/s00542-009-0889-z'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1007/s00542-009-0889-z'


 

This table displays all metadata directly associated to this object as RDF triples.

172 TRIPLES      21 PREDICATES      46 URIs      19 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1007/s00542-009-0889-z schema:about anzsrc-for:09
2 anzsrc-for:0906
3 schema:author N2fa8e681a63c4fbabf481f26103389c7
4 schema:citation sg:pub.10.1007/s00339-004-3176-y
5 sg:pub.10.1038/nature00792
6 sg:pub.10.1038/nmat1350
7 sg:pub.10.1038/nmat2009
8 https://doi.org/10.1016/j.mee.2006.07.004
9 https://doi.org/10.1016/j.mee.2006.11.009
10 https://doi.org/10.1016/j.scriptamat.2008.01.048
11 https://doi.org/10.1016/j.sse.2005.10.046
12 https://doi.org/10.1016/j.sse.2007.03.016
13 https://doi.org/10.1063/1.1604172
14 https://doi.org/10.1063/1.1608482
15 https://doi.org/10.1063/1.1834718
16 https://doi.org/10.1063/1.2709617
17 https://doi.org/10.1063/1.2805633
18 https://doi.org/10.1063/1.2898216
19 https://doi.org/10.1088/0022-3727/37/11/r01
20 https://doi.org/10.1109/tnano.2002.1005425
21 https://doi.org/10.1143/jjap.42.404
22 https://doi.org/10.1143/jjap.46.l247
23 schema:datePublished 2009-09
24 schema:datePublishedReg 2009-09-01
25 schema:description A Si2Sb2Te5 (SST) memory array with density of 4 Gbit/in.2 was fabricated by ultraviolet-imprint lithography. The contacted area of SST with electrodes in memory cell was 0.0392 μm2. Crystal structure transformation of SST film was studied. Adhesion strength of sample interface was tested by Nano Indenter®. Electrical property of SST electrical probe storage (EPS) system was measured. Resistance of as-deposited SST film was about four orders of magnitude higher than that of the one annealed at 350°C. Resistance of EPS cell dropped about two orders from high-resistance state to low-resistance state.
26 schema:genre research_article
27 schema:inLanguage en
28 schema:isAccessibleForFree false
29 schema:isPartOf Ncd3f57eb91d64323824b2160b3bf9130
30 Ne0a7e028db8e4ae0879da9b945b8647a
31 sg:journal.1294787
32 schema:name Fabrication, constructions and electrical property of Si2Sb2Te5 electrical probe storage system
33 schema:pagination 1389-1393
34 schema:productId N85f97df96bb64947ae4c8cd7d09e3cfa
35 Na6ca87d38bc741e4bf737f72f6678fa3
36 Nf117b0a3522d45f59306b37307d4493d
37 schema:sameAs https://app.dimensions.ai/details/publication/pub.1021974373
38 https://doi.org/10.1007/s00542-009-0889-z
39 schema:sdDatePublished 2019-04-11T14:34
40 schema:sdLicense https://scigraph.springernature.com/explorer/license/
41 schema:sdPublisher Nbf823549aff84bbbaee0ae7cff344df6
42 schema:url http://link.springer.com/10.1007%2Fs00542-009-0889-z
43 sgo:license sg:explorer/license/
44 sgo:sdDataset articles
45 rdf:type schema:ScholarlyArticle
46 N190a217aa96f47c18bfc21539847a5c7 rdf:first sg:person.010633743700.61
47 rdf:rest Ne7b1c890c78e4b2da0278a10c050edc4
48 N2592195ca8c9483d845f81b822976957 rdf:first N85e2f76dc9f74078a972a4a85f14d19d
49 rdf:rest rdf:nil
50 N2fa8e681a63c4fbabf481f26103389c7 rdf:first sg:person.014747233736.16
51 rdf:rest N739f7352a25b480081e5884bfb6bbd18
52 N739f7352a25b480081e5884bfb6bbd18 rdf:first sg:person.015547052475.66
53 rdf:rest N190a217aa96f47c18bfc21539847a5c7
54 N75afea5a969647c3b2b3fd7bebc0ec49 rdf:first sg:person.013607572077.11
55 rdf:rest N7b322f41cfc34ce5975f6be7888d91dc
56 N7b322f41cfc34ce5975f6be7888d91dc rdf:first sg:person.016030673711.06
57 rdf:rest N2592195ca8c9483d845f81b822976957
58 N85e2f76dc9f74078a972a4a85f14d19d schema:affiliation https://www.grid.ac/institutes/grid.484633.e
59 schema:familyName Zhang
60 schema:givenName Jianpin
61 rdf:type schema:Person
62 N85f97df96bb64947ae4c8cd7d09e3cfa schema:name readcube_id
63 schema:value 68b0d03ae0826ead0697743efa6d595b44d002ad1aed5a0e4a39204e18eb21c3
64 rdf:type schema:PropertyValue
65 Na6ca87d38bc741e4bf737f72f6678fa3 schema:name dimensions_id
66 schema:value pub.1021974373
67 rdf:type schema:PropertyValue
68 Nbf823549aff84bbbaee0ae7cff344df6 schema:name Springer Nature - SN SciGraph project
69 rdf:type schema:Organization
70 Ncd3f57eb91d64323824b2160b3bf9130 schema:issueNumber 9
71 rdf:type schema:PublicationIssue
72 Ne0a7e028db8e4ae0879da9b945b8647a schema:volumeNumber 15
73 rdf:type schema:PublicationVolume
74 Ne7b1c890c78e4b2da0278a10c050edc4 rdf:first sg:person.01153154634.96
75 rdf:rest N75afea5a969647c3b2b3fd7bebc0ec49
76 Nf117b0a3522d45f59306b37307d4493d schema:name doi
77 schema:value 10.1007/s00542-009-0889-z
78 rdf:type schema:PropertyValue
79 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
80 schema:name Engineering
81 rdf:type schema:DefinedTerm
82 anzsrc-for:0906 schema:inDefinedTermSet anzsrc-for:
83 schema:name Electrical and Electronic Engineering
84 rdf:type schema:DefinedTerm
85 sg:grant.4968574 http://pending.schema.org/fundedItem sg:pub.10.1007/s00542-009-0889-z
86 rdf:type schema:MonetaryGrant
87 sg:journal.1294787 schema:issn 0946-7076
88 1432-1858
89 schema:name Microsystem Technologies
90 rdf:type schema:Periodical
91 sg:person.010633743700.61 schema:affiliation https://www.grid.ac/institutes/grid.458459.1
92 schema:familyName Zhang
93 schema:givenName Ting
94 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010633743700.61
95 rdf:type schema:Person
96 sg:person.01153154634.96 schema:affiliation https://www.grid.ac/institutes/grid.450275.1
97 schema:familyName Zhang
98 schema:givenName Guoxin
99 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01153154634.96
100 rdf:type schema:Person
101 sg:person.013607572077.11 schema:affiliation https://www.grid.ac/institutes/grid.484633.e
102 schema:familyName Zhang
103 schema:givenName Jing
104 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013607572077.11
105 rdf:type schema:Person
106 sg:person.014747233736.16 schema:affiliation https://www.grid.ac/institutes/grid.458459.1
107 schema:familyName Liu
108 schema:givenName Yanbo
109 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014747233736.16
110 rdf:type schema:Person
111 sg:person.015547052475.66 schema:affiliation https://www.grid.ac/institutes/grid.458459.1
112 schema:familyName Song
113 schema:givenName Zhitang
114 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015547052475.66
115 rdf:type schema:Person
116 sg:person.016030673711.06 schema:affiliation https://www.grid.ac/institutes/grid.484633.e
117 schema:familyName Zhou
118 schema:givenName Weimin
119 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016030673711.06
120 rdf:type schema:Person
121 sg:pub.10.1007/s00339-004-3176-y schema:sameAs https://app.dimensions.ai/details/publication/pub.1052842109
122 https://doi.org/10.1007/s00339-004-3176-y
123 rdf:type schema:CreativeWork
124 sg:pub.10.1038/nature00792 schema:sameAs https://app.dimensions.ai/details/publication/pub.1051269288
125 https://doi.org/10.1038/nature00792
126 rdf:type schema:CreativeWork
127 sg:pub.10.1038/nmat1350 schema:sameAs https://app.dimensions.ai/details/publication/pub.1012684034
128 https://doi.org/10.1038/nmat1350
129 rdf:type schema:CreativeWork
130 sg:pub.10.1038/nmat2009 schema:sameAs https://app.dimensions.ai/details/publication/pub.1034064960
131 https://doi.org/10.1038/nmat2009
132 rdf:type schema:CreativeWork
133 https://doi.org/10.1016/j.mee.2006.07.004 schema:sameAs https://app.dimensions.ai/details/publication/pub.1021412620
134 rdf:type schema:CreativeWork
135 https://doi.org/10.1016/j.mee.2006.11.009 schema:sameAs https://app.dimensions.ai/details/publication/pub.1006832981
136 rdf:type schema:CreativeWork
137 https://doi.org/10.1016/j.scriptamat.2008.01.048 schema:sameAs https://app.dimensions.ai/details/publication/pub.1003996465
138 rdf:type schema:CreativeWork
139 https://doi.org/10.1016/j.sse.2005.10.046 schema:sameAs https://app.dimensions.ai/details/publication/pub.1040040314
140 rdf:type schema:CreativeWork
141 https://doi.org/10.1016/j.sse.2007.03.016 schema:sameAs https://app.dimensions.ai/details/publication/pub.1011564531
142 rdf:type schema:CreativeWork
143 https://doi.org/10.1063/1.1604172 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057724896
144 rdf:type schema:CreativeWork
145 https://doi.org/10.1063/1.1608482 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057725376
146 rdf:type schema:CreativeWork
147 https://doi.org/10.1063/1.1834718 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057825678
148 rdf:type schema:CreativeWork
149 https://doi.org/10.1063/1.2709617 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057858322
150 rdf:type schema:CreativeWork
151 https://doi.org/10.1063/1.2805633 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057869060
152 rdf:type schema:CreativeWork
153 https://doi.org/10.1063/1.2898216 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057880123
154 rdf:type schema:CreativeWork
155 https://doi.org/10.1088/0022-3727/37/11/r01 schema:sameAs https://app.dimensions.ai/details/publication/pub.1010341090
156 rdf:type schema:CreativeWork
157 https://doi.org/10.1109/tnano.2002.1005425 schema:sameAs https://app.dimensions.ai/details/publication/pub.1061711731
158 rdf:type schema:CreativeWork
159 https://doi.org/10.1143/jjap.42.404 schema:sameAs https://app.dimensions.ai/details/publication/pub.1063070142
160 rdf:type schema:CreativeWork
161 https://doi.org/10.1143/jjap.46.l247 schema:sameAs https://app.dimensions.ai/details/publication/pub.1063080270
162 rdf:type schema:CreativeWork
163 https://www.grid.ac/institutes/grid.450275.1 schema:alternateName Shanghai Institute of Applied Physics
164 schema:name Shanghai Institute of Applied Physics, Chinese Academy of Sciences, 201800, Shanghai, China
165 rdf:type schema:Organization
166 https://www.grid.ac/institutes/grid.458459.1 schema:alternateName Shanghai Institute of Microsystem and Information Technology
167 schema:name Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, China
168 Laboratory of Nanotechnology, Shanghai Nanotechnology Promotion Center, 200237, Shanghai, China
169 rdf:type schema:Organization
170 https://www.grid.ac/institutes/grid.484633.e schema:alternateName Shanghai Nanotechnology Promotion Center
171 schema:name Laboratory of Nanotechnology, Shanghai Nanotechnology Promotion Center, 200237, Shanghai, China
172 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...