Fabrication, constructions and electrical property of Si2Sb2Te5 electrical probe storage system View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2009-09

AUTHORS

Yanbo Liu, Zhitang Song, Ting Zhang, Guoxin Zhang, Jing Zhang, Weimin Zhou, Jianpin Zhang

ABSTRACT

A Si2Sb2Te5 (SST) memory array with density of 4 Gbit/in.2 was fabricated by ultraviolet-imprint lithography. The contacted area of SST with electrodes in memory cell was 0.0392 μm2. Crystal structure transformation of SST film was studied. Adhesion strength of sample interface was tested by Nano Indenter®. Electrical property of SST electrical probe storage (EPS) system was measured. Resistance of as-deposited SST film was about four orders of magnitude higher than that of the one annealed at 350°C. Resistance of EPS cell dropped about two orders from high-resistance state to low-resistance state. More... »

PAGES

1389-1393

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s00542-009-0889-z

DOI

http://dx.doi.org/10.1007/s00542-009-0889-z

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1021974373


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