Design of tunnel FET architectures for low power application using improved Chimp optimizer algorithm View Full Text


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Article Info

DATE

2021-11-12

AUTHORS

Sabitabrata Bhattacharya, Suman Lata Tripathi, Vikram Kumar Kamboj

ABSTRACT

An improved Chimps optimizer algorithm is proposed in this paper and is applied for the performance optimization of tunnel FET architectures for use in low power VLSI circuits. The steep subthreshold characteristics of TFET improves device performance and make it suitable for low power digital and memory applications. Classical Chimps optimizer has poor convergence and problem to stuck into local minima for high dimensional problems. This research focuses on mathematical model of divergent thinking and sensual movement of chimps in four different forms named attacker, barrier, chaser, and driver for simulation. The improved variant of Chimps optimizer has been proposed in this research and named as Imp-Chimp. To validate the efficacy and feasibility of the suggested technique, it has been examined for standard benchmarks and multidisciplinary engineering design problems to solve non-convex, non-linear, and typical engineering design problems. The suggested technique variants have been evaluated for seven standard unimodal benchmark functions, six standard multi modal benchmark functions, ten standard fixed dimension benchmark functions and engineering design problems (i. e., TFET, BTBT). The outcomes of this method have been compared with other existing optimization methods considering convergence speed as well as for searching local and global optimal solutions. The testing results show the better performance of the proposed method. The paper also demonstrates the tunnel field effect transistor (TFET) as a promising device for low power electronic circuits and an engineering problem where the Imp-Chimp optimizer can be implemented for performance improvement. The TFET is based on the carrier generation using the quantum mechanical process of the band-to-band tunneling (BTBT). TFET can meet the requirements of a device that can perform on low supply voltage with reduced leakage currents and low sub-threshold swing. TFET can be optimized to give similar performance as MOSFET, but with much lower power consumption. More... »

PAGES

1-44

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    http://scigraph.springernature.com/pub.10.1007/s00366-021-01530-4

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    http://dx.doi.org/10.1007/s00366-021-01530-4

    DIMENSIONS

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    53 consumption
    54 convergence
    55 convergence speed
    56 current
    57 design
    58 design problem
    59 device performance
    60 devices
    61 different forms
    62 digital
    63 dimensional problems
    64 divergent thinking
    65 drivers
    66 effect transistors
    67 efficacy
    68 electronic circuits
    69 engineering design problems
    70 engineering problems
    71 feasibility
    72 field-effect transistors
    73 form
    74 function
    75 generation
    76 global optimal solution
    77 high-dimensional problems
    78 improved variant
    79 improvement
    80 leakage current
    81 local minima
    82 low power VLSI circuits
    83 low power applications
    84 low power consumption
    85 low power digital
    86 low sub-threshold swing
    87 low supply voltage
    88 low-power electronic circuits
    89 mathematical model
    90 mechanical processes
    91 memory applications
    92 method
    93 minimum
    94 model
    95 movement
    96 optimal solution
    97 optimization
    98 optimization method
    99 optimizer
    100 optimizer algorithm
    101 outcomes
    102 paper
    103 performance
    104 performance improvement
    105 performance optimization
    106 poor convergence
    107 power applications
    108 power consumption
    109 power digital
    110 power electronic circuits
    111 problem
    112 process
    113 promising device
    114 quantum mechanical process
    115 requirements
    116 research
    117 results
    118 similar performance
    119 simulations
    120 solution
    121 speed
    122 standard benchmarks
    123 steep subthreshold characteristics
    124 sub-threshold swing
    125 subthreshold characteristics
    126 supply voltage
    127 swing
    128 technique
    129 technique variants
    130 testing results
    131 thinking
    132 transistors
    133 tunnel field-effect transistor
    134 tunneling
    135 typical engineering design problems
    136 unimodal benchmark functions
    137 use
    138 variants
    139 voltage
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