High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2010-10-30

AUTHORS

D. I. Nikitichev, Y. Ding, M. Ruiz, M. Calligaro, N. Michel, M. Krakowski, I. Krestnikov, D. Livshits, M. A. Cataluna, E. U. Rafailov

ABSTRACT

We report picosecond pulse generation with high peak power in the range of 3.6 W from monolithic passively mode-locked tapered quantum-dot laser diodes, exhibiting low divergence and good beam quality. These results were achieved using a gain-guided tapered laser geometry. The generation of picosecond pulses with high average power up to 209 mW directly from such tapered lasers is also demonstrated, corresponding to 14.2 pJ pulse energy (14.65 GHz repetition rate). A comparison between the mode-locking performance of these tapered lasers incorporating either five or ten layers of InAs/GaAs self-organized quantum dots in their active layer is also presented. More... »

PAGES

609-613

References to SciGraph publications

  • 2007-07. Mode-locked quantum-dot lasers in NATURE PHOTONICS
  • Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1007/s00340-010-4290-5

    DOI

    http://dx.doi.org/10.1007/s00340-010-4290-5

    DIMENSIONS

    https://app.dimensions.ai/details/publication/pub.1037729850


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