Laser-produced plasma EUV source based on tin-rich, thin-layer targets View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2011-03

AUTHORS

R. Rakowski, J. Mikołajczyk, A. Bartnik, H. Fiedorowicz, F. de Gaufridy de Dortan, R. Jarocki, J. Kostecki, M. Szczurek, P. Wachulak

ABSTRACT

In this paper a new approach to a laser-produced plasma EUV source based on a tin target is presented. A thin layer of pure tin and composite layers consisting of Sn with Si, SiO and LiF are investigated. The target composed of several thin layers produces less debris than the other targets and provides a conversion efficiency (CE) in the 13.5-nm±1% band at least comparable to the CE for the pure tin slab target. The largest CE was observed for the target composed of a mixture of Sn and LiF, due to the fact that lithium, similarly to tin, is a strong emitter at 13.5 nm. More... »

PAGES

559-567

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s00340-010-4193-5

DOI

http://dx.doi.org/10.1007/s00340-010-4193-5

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1027397603


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51 schema:description In this paper a new approach to a laser-produced plasma EUV source based on a tin target is presented. A thin layer of pure tin and composite layers consisting of Sn with Si, SiO and LiF are investigated. The target composed of several thin layers produces less debris than the other targets and provides a conversion efficiency (CE) in the 13.5-nm±1% band at least comparable to the CE for the pure tin slab target. The largest CE was observed for the target composed of a mixture of Sn and LiF, due to the fact that lithium, similarly to tin, is a strong emitter at 13.5 nm.
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