The characterization of plasma-polymerized C60 thin films View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2002-05

AUTHORS

M. Shiraishi, M. Ramm, M. Ata

ABSTRACT

Plasma-polymerized C60 thin films were investigated in the form of a field effect transistor (FET) structure. In the FET device, the C60 polymer acts as a p-type semiconductor, whereas C60 is an n-type semiconductor. Its conduction mechanism can be described as due to variable range hopping. As a sensing device, the C60 polymer can behave as a gas sensor for electrophoric gases and can also be operated as a photo-sensing device in air. More... »

PAGES

613-616

Journal

TITLE

Applied Physics A

ISSUE

5

VOLUME

74

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s003390100971

DOI

http://dx.doi.org/10.1007/s003390100971

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1002436703


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Sony (Japan)", 
          "id": "https://www.grid.ac/institutes/grid.410792.9", 
          "name": [
            "Frontier Science Laboratories, Sony Corporation, Shin-Sakuragaoka 2-1-1, Hodogaya-ku, Yokohama 240-0036, Japan, JP"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Shiraishi", 
        "givenName": "M.", 
        "id": "sg:person.016671751211.92", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016671751211.92"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Sony (Japan)", 
          "id": "https://www.grid.ac/institutes/grid.410792.9", 
          "name": [
            "Frontier Science Laboratories, Sony Corporation, Shin-Sakuragaoka 2-1-1, Hodogaya-ku, Yokohama 240-0036, Japan, JP"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Ramm", 
        "givenName": "M.", 
        "id": "sg:person.014542603245.90", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014542603245.90"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Sony (Japan)", 
          "id": "https://www.grid.ac/institutes/grid.410792.9", 
          "name": [
            "Frontier Science Laboratories, Sony Corporation, Shin-Sakuragaoka 2-1-1, Hodogaya-ku, Yokohama 240-0036, Japan, JP"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Ata", 
        "givenName": "M.", 
        "id": "sg:person.01056547140.94", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01056547140.94"
        ], 
        "type": "Person"
      }
    ], 
    "datePublished": "2002-05", 
    "datePublishedReg": "2002-05-01", 
    "description": "Plasma-polymerized C60 thin films were investigated in the form of a field effect transistor (FET) structure. In the FET device, the C60 polymer acts as a p-type semiconductor, whereas C60 is an n-type semiconductor. Its conduction mechanism can be described as due to variable range hopping. As a sensing device, the C60 polymer can behave as a gas sensor for electrophoric gases and can also be operated as a photo-sensing device in air.", 
    "genre": "research_article", 
    "id": "sg:pub.10.1007/s003390100971", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1022207", 
        "issn": [
          "0947-8396", 
          "1432-0630"
        ], 
        "name": "Applied Physics A", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "5", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "74"
      }
    ], 
    "name": "The characterization of plasma-polymerized C60 thin films", 
    "pagination": "613-616", 
    "productId": [
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "0b99f963cea3232fc27c1a44e2e7cb4737547dbdc2d28f394dbde714fee0f848"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1007/s003390100971"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1002436703"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1007/s003390100971", 
      "https://app.dimensions.ai/details/publication/pub.1002436703"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2019-04-11T00:10", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000001_0000000264/records_8695_00000485.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "http://link.springer.com/10.1007/s003390100971"
  }
]
 

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This table displays all metadata directly associated to this object as RDF triples.

75 TRIPLES      20 PREDICATES      27 URIs      19 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1007/s003390100971 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author N156e91584dfe4657bf26ea519f19b7f6
4 schema:datePublished 2002-05
5 schema:datePublishedReg 2002-05-01
6 schema:description Plasma-polymerized C60 thin films were investigated in the form of a field effect transistor (FET) structure. In the FET device, the C60 polymer acts as a p-type semiconductor, whereas C60 is an n-type semiconductor. Its conduction mechanism can be described as due to variable range hopping. As a sensing device, the C60 polymer can behave as a gas sensor for electrophoric gases and can also be operated as a photo-sensing device in air.
7 schema:genre research_article
8 schema:inLanguage en
9 schema:isAccessibleForFree false
10 schema:isPartOf N18cb316ded5c48828b04e096ff7275e3
11 N868dd688101942dd9c76d8eacf7aaaa5
12 sg:journal.1022207
13 schema:name The characterization of plasma-polymerized C60 thin films
14 schema:pagination 613-616
15 schema:productId N2afd8606c47540ee91caf773e1d14b53
16 N706f8e9236294a03bcdf7fb1d55f0e81
17 Nc3c25605b7a549e297e3b8a8342b4b4d
18 schema:sameAs https://app.dimensions.ai/details/publication/pub.1002436703
19 https://doi.org/10.1007/s003390100971
20 schema:sdDatePublished 2019-04-11T00:10
21 schema:sdLicense https://scigraph.springernature.com/explorer/license/
22 schema:sdPublisher N1390c15db9a442989cf6d0673c44a591
23 schema:url http://link.springer.com/10.1007/s003390100971
24 sgo:license sg:explorer/license/
25 sgo:sdDataset articles
26 rdf:type schema:ScholarlyArticle
27 N00fc1517e67441e4895553ad9db63a64 rdf:first sg:person.014542603245.90
28 rdf:rest Nea15365eef984bb3bd2f9abcc1e7dacc
29 N1390c15db9a442989cf6d0673c44a591 schema:name Springer Nature - SN SciGraph project
30 rdf:type schema:Organization
31 N156e91584dfe4657bf26ea519f19b7f6 rdf:first sg:person.016671751211.92
32 rdf:rest N00fc1517e67441e4895553ad9db63a64
33 N18cb316ded5c48828b04e096ff7275e3 schema:volumeNumber 74
34 rdf:type schema:PublicationVolume
35 N2afd8606c47540ee91caf773e1d14b53 schema:name dimensions_id
36 schema:value pub.1002436703
37 rdf:type schema:PropertyValue
38 N706f8e9236294a03bcdf7fb1d55f0e81 schema:name doi
39 schema:value 10.1007/s003390100971
40 rdf:type schema:PropertyValue
41 N868dd688101942dd9c76d8eacf7aaaa5 schema:issueNumber 5
42 rdf:type schema:PublicationIssue
43 Nc3c25605b7a549e297e3b8a8342b4b4d schema:name readcube_id
44 schema:value 0b99f963cea3232fc27c1a44e2e7cb4737547dbdc2d28f394dbde714fee0f848
45 rdf:type schema:PropertyValue
46 Nea15365eef984bb3bd2f9abcc1e7dacc rdf:first sg:person.01056547140.94
47 rdf:rest rdf:nil
48 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
49 schema:name Engineering
50 rdf:type schema:DefinedTerm
51 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
52 schema:name Materials Engineering
53 rdf:type schema:DefinedTerm
54 sg:journal.1022207 schema:issn 0947-8396
55 1432-0630
56 schema:name Applied Physics A
57 rdf:type schema:Periodical
58 sg:person.01056547140.94 schema:affiliation https://www.grid.ac/institutes/grid.410792.9
59 schema:familyName Ata
60 schema:givenName M.
61 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01056547140.94
62 rdf:type schema:Person
63 sg:person.014542603245.90 schema:affiliation https://www.grid.ac/institutes/grid.410792.9
64 schema:familyName Ramm
65 schema:givenName M.
66 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014542603245.90
67 rdf:type schema:Person
68 sg:person.016671751211.92 schema:affiliation https://www.grid.ac/institutes/grid.410792.9
69 schema:familyName Shiraishi
70 schema:givenName M.
71 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016671751211.92
72 rdf:type schema:Person
73 https://www.grid.ac/institutes/grid.410792.9 schema:alternateName Sony (Japan)
74 schema:name Frontier Science Laboratories, Sony Corporation, Shin-Sakuragaoka 2-1-1, Hodogaya-ku, Yokohama 240-0036, Japan, JP
75 rdf:type schema:Organization
 




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