Femtosecond laser ablation of silicon–modification thresholds and morphology View Full Text


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Article Info

DATE

2002-01

AUTHORS

J. Bonse, S. Baudach, J. Krüger, W. Kautek, M. Lenzner

ABSTRACT

We investigated the initial modification and ablation of crystalline silicon with single and multiple Ti:sapphire laser pulses of 5 to 400 fs duration. In accordance with earlier established models, we found the phenomena amorphization, melting, re-crystallization, nucleated vaporization, and ablation to occur with increasing laser fluence down to the shortest pulse durations. We noticed new morphological features (bubbles) as well as familiar ones (ripples, columns). A nearly constant ablation threshold fluence on the order of 0.2 J/cm2 for all pulse durations and multiple-pulse irradiation was observed. For a duration of ≈100 fs, significant incubation can be observed, whereas for 5 fs pulses, the ablation threshold does not depend on the pulse number within the experimental error. For micromachining of silicon, a pulse duration of less than 500 fs is not advantageous. More... »

PAGES

19-25

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s003390100893

DOI

http://dx.doi.org/10.1007/s003390100893

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1024322924


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