UV and VUV excilamps excited by glow, barrier and capacitive discharges View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1999-12

AUTHORS

V.F. Tarasenko, E.B. Chernov, M.V. Erofeev, M.I. Lomaev, A.N. Panchenko, V.S. Skakun, E.A. Sosnin, D.V. Shitz

ABSTRACT

. An investigation was made into the characteristics of XeCl (λ∼308 nm), KrCl (λ∼222 nm) and XeI (λ∼253 nm)capacitive HF discharge and glow discharge excilamps. High fluorescence efficiency of the exciplex molecules has been obtained from excilamps with simple design under capacitive HF discharge excitation. A fluorescence efficiency with respect to the electrical power deposition of up to ∼12% has been measured. The study of XeCl, KrCl and XeI excilamps has shown that it is possible to create sealed-off excilamps with gas mixture lifetimes of over 1000 hours. More... »

PAGES

s327-s329

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s003390051410

DOI

http://dx.doi.org/10.1007/s003390051410

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1004064094


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0299", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Other Physical Sciences", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "High Current Electronics Institute, SB Russian Academy of Sciences, 4, Akademicheskii Ave., 634055, Tomsk, Russia, RU", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "High Current Electronics Institute, SB Russian Academy of Sciences, 4, Akademicheskii Ave., 634055, Tomsk, Russia, RU"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Tarasenko", 
        "givenName": "V.F.", 
        "id": "sg:person.010404324635.66", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010404324635.66"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "High Current Electronics Institute, SB Russian Academy of Sciences, 4, Akademicheskii Ave., 634055, Tomsk, Russia, RU", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "High Current Electronics Institute, SB Russian Academy of Sciences, 4, Akademicheskii Ave., 634055, Tomsk, Russia, RU"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Chernov", 
        "givenName": "E.B.", 
        "id": "sg:person.012222330257.41", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012222330257.41"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "High Current Electronics Institute, SB Russian Academy of Sciences, 4, Akademicheskii Ave., 634055, Tomsk, Russia, RU", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "High Current Electronics Institute, SB Russian Academy of Sciences, 4, Akademicheskii Ave., 634055, Tomsk, Russia, RU"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Erofeev", 
        "givenName": "M.V.", 
        "id": "sg:person.011621550151.39", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011621550151.39"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "High Current Electronics Institute, SB Russian Academy of Sciences, 4, Akademicheskii Ave., 634055, Tomsk, Russia, RU", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "High Current Electronics Institute, SB Russian Academy of Sciences, 4, Akademicheskii Ave., 634055, Tomsk, Russia, RU"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lomaev", 
        "givenName": "M.I.", 
        "id": "sg:person.015570240325.49", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015570240325.49"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "High Current Electronics Institute, SB Russian Academy of Sciences, 4, Akademicheskii Ave., 634055, Tomsk, Russia, RU", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "High Current Electronics Institute, SB Russian Academy of Sciences, 4, Akademicheskii Ave., 634055, Tomsk, Russia, RU"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Panchenko", 
        "givenName": "A.N.", 
        "id": "sg:person.016312015435.77", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016312015435.77"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "High Current Electronics Institute, SB Russian Academy of Sciences, 4, Akademicheskii Ave., 634055, Tomsk, Russia, RU", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "High Current Electronics Institute, SB Russian Academy of Sciences, 4, Akademicheskii Ave., 634055, Tomsk, Russia, RU"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Skakun", 
        "givenName": "V.S.", 
        "id": "sg:person.015552353655.29", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015552353655.29"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "High Current Electronics Institute, SB Russian Academy of Sciences, 4, Akademicheskii Ave., 634055, Tomsk, Russia, RU", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "High Current Electronics Institute, SB Russian Academy of Sciences, 4, Akademicheskii Ave., 634055, Tomsk, Russia, RU"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Sosnin", 
        "givenName": "E.A.", 
        "id": "sg:person.012564451655.47", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012564451655.47"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "High Current Electronics Institute, SB Russian Academy of Sciences, 4, Akademicheskii Ave., 634055, Tomsk, Russia, RU", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "High Current Electronics Institute, SB Russian Academy of Sciences, 4, Akademicheskii Ave., 634055, Tomsk, Russia, RU"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Shitz", 
        "givenName": "D.V.", 
        "id": "sg:person.014454065415.77", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014454065415.77"
        ], 
        "type": "Person"
      }
    ], 
    "datePublished": "1999-12", 
    "datePublishedReg": "1999-12-01", 
    "description": "Abstract.  An investigation was made into the characteristics of XeCl (\u03bb\u223c308\u00a0nm), KrCl (\u03bb\u223c222\u00a0nm) and XeI (\u03bb\u223c253\u00a0nm)capacitive HF discharge and glow discharge excilamps. High fluorescence efficiency of the exciplex molecules has been obtained from excilamps with simple design under capacitive HF discharge excitation. A fluorescence efficiency with respect to the electrical power deposition of up to \u223c12% has been measured. The study of XeCl, KrCl and XeI excilamps has shown that it is possible to create sealed-off excilamps with gas mixture lifetimes of over 1000 hours.", 
    "genre": "article", 
    "id": "sg:pub.10.1007/s003390051410", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1022207", 
        "issn": [
          "0947-8396", 
          "1432-0630"
        ], 
        "name": "Applied Physics A", 
        "publisher": "Springer Nature", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "Suppl 1", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "69"
      }
    ], 
    "keywords": [
      "discharge", 
      "hours", 
      "study", 
      "HF discharge", 
      "barriers", 
      "investigation", 
      "characteristics", 
      "molecules", 
      "respect", 
      "deposition", 
      "design", 
      "excilamp", 
      "lifetime", 
      "efficiency", 
      "excitation", 
      "power deposition", 
      "UV", 
      "discharge excitation", 
      "fluorescence efficiency", 
      "electrical power deposition", 
      "glow", 
      "high fluorescence efficiency", 
      "exciplex molecules", 
      "simple design", 
      "capacitive discharge", 
      "XeCl", 
      "KrCl", 
      "XeI", 
      "characteristics of XeCl", 
      "discharge excilamps", 
      "capacitive HF discharge excitation", 
      "HF discharge excitation", 
      "study of XeCl", 
      "XeI excilamps", 
      "gas mixture lifetimes", 
      "mixture lifetimes", 
      "VUV excilamps"
    ], 
    "name": "UV and VUV excilamps excited by glow, barrier and capacitive discharges", 
    "pagination": "s327-s329", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1004064094"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1007/s003390051410"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1007/s003390051410", 
      "https://app.dimensions.ai/details/publication/pub.1004064094"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-01-01T18:09", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220101/entities/gbq_results/article/article_309.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1007/s003390051410"
  }
]
 

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This table displays all metadata directly associated to this object as RDF triples.

144 TRIPLES      21 PREDICATES      63 URIs      55 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1007/s003390051410 schema:about anzsrc-for:02
2 anzsrc-for:0299
3 schema:author Ned8c76539e204013be0cab53a0e8db7f
4 schema:datePublished 1999-12
5 schema:datePublishedReg 1999-12-01
6 schema:description Abstract. An investigation was made into the characteristics of XeCl (λ∼308 nm), KrCl (λ∼222 nm) and XeI (λ∼253 nm)capacitive HF discharge and glow discharge excilamps. High fluorescence efficiency of the exciplex molecules has been obtained from excilamps with simple design under capacitive HF discharge excitation. A fluorescence efficiency with respect to the electrical power deposition of up to ∼12% has been measured. The study of XeCl, KrCl and XeI excilamps has shown that it is possible to create sealed-off excilamps with gas mixture lifetimes of over 1000 hours.
7 schema:genre article
8 schema:inLanguage en
9 schema:isAccessibleForFree false
10 schema:isPartOf Nde520f0667c841b98d93cb856633b5a1
11 Nf79d9c60cf2e4e62af77952009cad405
12 sg:journal.1022207
13 schema:keywords HF discharge
14 HF discharge excitation
15 KrCl
16 UV
17 VUV excilamps
18 XeCl
19 XeI
20 XeI excilamps
21 barriers
22 capacitive HF discharge excitation
23 capacitive discharge
24 characteristics
25 characteristics of XeCl
26 deposition
27 design
28 discharge
29 discharge excilamps
30 discharge excitation
31 efficiency
32 electrical power deposition
33 excilamp
34 exciplex molecules
35 excitation
36 fluorescence efficiency
37 gas mixture lifetimes
38 glow
39 high fluorescence efficiency
40 hours
41 investigation
42 lifetime
43 mixture lifetimes
44 molecules
45 power deposition
46 respect
47 simple design
48 study
49 study of XeCl
50 schema:name UV and VUV excilamps excited by glow, barrier and capacitive discharges
51 schema:pagination s327-s329
52 schema:productId N701929785b3f4611909b1083bc944ea1
53 Nec1e613cb5da4c669af79c626ac0de97
54 schema:sameAs https://app.dimensions.ai/details/publication/pub.1004064094
55 https://doi.org/10.1007/s003390051410
56 schema:sdDatePublished 2022-01-01T18:09
57 schema:sdLicense https://scigraph.springernature.com/explorer/license/
58 schema:sdPublisher Nff84cef80e0f4ee882e87c7e7a95ad26
59 schema:url https://doi.org/10.1007/s003390051410
60 sgo:license sg:explorer/license/
61 sgo:sdDataset articles
62 rdf:type schema:ScholarlyArticle
63 N2b8d4a0b9fbb400eb051201bcb930127 rdf:first sg:person.015570240325.49
64 rdf:rest Ncd4475e406484735a658a60063d4f858
65 N331c8d785fcf491dbb5e16b7788bf1be rdf:first sg:person.011621550151.39
66 rdf:rest N2b8d4a0b9fbb400eb051201bcb930127
67 N701929785b3f4611909b1083bc944ea1 schema:name dimensions_id
68 schema:value pub.1004064094
69 rdf:type schema:PropertyValue
70 N8bdaed311c5141b0a0d02768239dc887 rdf:first sg:person.012564451655.47
71 rdf:rest Ndf628526d74349c39fad54256ed20c59
72 Ncd4475e406484735a658a60063d4f858 rdf:first sg:person.016312015435.77
73 rdf:rest Nd805de1ee4f04f91981a427931f11f1b
74 Nd805de1ee4f04f91981a427931f11f1b rdf:first sg:person.015552353655.29
75 rdf:rest N8bdaed311c5141b0a0d02768239dc887
76 Nde520f0667c841b98d93cb856633b5a1 schema:volumeNumber 69
77 rdf:type schema:PublicationVolume
78 Ndf628526d74349c39fad54256ed20c59 rdf:first sg:person.014454065415.77
79 rdf:rest rdf:nil
80 Nec1e613cb5da4c669af79c626ac0de97 schema:name doi
81 schema:value 10.1007/s003390051410
82 rdf:type schema:PropertyValue
83 Ned8c76539e204013be0cab53a0e8db7f rdf:first sg:person.010404324635.66
84 rdf:rest Nfd5602a1708745aa9e11c61e31889fbf
85 Nf79d9c60cf2e4e62af77952009cad405 schema:issueNumber Suppl 1
86 rdf:type schema:PublicationIssue
87 Nfd5602a1708745aa9e11c61e31889fbf rdf:first sg:person.012222330257.41
88 rdf:rest N331c8d785fcf491dbb5e16b7788bf1be
89 Nff84cef80e0f4ee882e87c7e7a95ad26 schema:name Springer Nature - SN SciGraph project
90 rdf:type schema:Organization
91 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
92 schema:name Physical Sciences
93 rdf:type schema:DefinedTerm
94 anzsrc-for:0299 schema:inDefinedTermSet anzsrc-for:
95 schema:name Other Physical Sciences
96 rdf:type schema:DefinedTerm
97 sg:journal.1022207 schema:issn 0947-8396
98 1432-0630
99 schema:name Applied Physics A
100 schema:publisher Springer Nature
101 rdf:type schema:Periodical
102 sg:person.010404324635.66 schema:affiliation grid-institutes:None
103 schema:familyName Tarasenko
104 schema:givenName V.F.
105 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010404324635.66
106 rdf:type schema:Person
107 sg:person.011621550151.39 schema:affiliation grid-institutes:None
108 schema:familyName Erofeev
109 schema:givenName M.V.
110 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011621550151.39
111 rdf:type schema:Person
112 sg:person.012222330257.41 schema:affiliation grid-institutes:None
113 schema:familyName Chernov
114 schema:givenName E.B.
115 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012222330257.41
116 rdf:type schema:Person
117 sg:person.012564451655.47 schema:affiliation grid-institutes:None
118 schema:familyName Sosnin
119 schema:givenName E.A.
120 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012564451655.47
121 rdf:type schema:Person
122 sg:person.014454065415.77 schema:affiliation grid-institutes:None
123 schema:familyName Shitz
124 schema:givenName D.V.
125 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014454065415.77
126 rdf:type schema:Person
127 sg:person.015552353655.29 schema:affiliation grid-institutes:None
128 schema:familyName Skakun
129 schema:givenName V.S.
130 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015552353655.29
131 rdf:type schema:Person
132 sg:person.015570240325.49 schema:affiliation grid-institutes:None
133 schema:familyName Lomaev
134 schema:givenName M.I.
135 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015570240325.49
136 rdf:type schema:Person
137 sg:person.016312015435.77 schema:affiliation grid-institutes:None
138 schema:familyName Panchenko
139 schema:givenName A.N.
140 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016312015435.77
141 rdf:type schema:Person
142 grid-institutes:None schema:alternateName High Current Electronics Institute, SB Russian Academy of Sciences, 4, Akademicheskii Ave., 634055, Tomsk, Russia, RU
143 schema:name High Current Electronics Institute, SB Russian Academy of Sciences, 4, Akademicheskii Ave., 634055, Tomsk, Russia, RU
144 rdf:type schema:Organization
 




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