Structure, electrical and chemical properties of zirconium nitride films deposited by dc reactive magnetron sputtering View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1997-06

AUTHORS

D. Wu, Z. Zhang, D. Fu, W. Fan, H. Guo

ABSTRACT

and Ar ambient. X-ray diffraction indicated that growth of ZrN with a preferred (111) orientation over Si(100) was achieved. The resistivity of the films varies from 200 μΩcm to 15 μΩcm depending on the N2 content in the working gas. The square resistance of the films deposited on 96% Al2O3 ceramic wafers is stable below 300 °C. More... »

PAGES

593-595

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s003390050522

DOI

http://dx.doi.org/10.1007/s003390050522

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1020377836


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Wuhan University", 
          "id": "https://www.grid.ac/institutes/grid.49470.3e", 
          "name": [
            "Ion Beam Physics Lab, Department of Physics, Wuhan University, Wuhan 430072, P.R. China, CN"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Wu", 
        "givenName": "D.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Wuhan University", 
          "id": "https://www.grid.ac/institutes/grid.49470.3e", 
          "name": [
            "Ion Beam Physics Lab, Department of Physics, Wuhan University, Wuhan 430072, P.R. China, CN"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Zhang", 
        "givenName": "Z.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Wuhan University", 
          "id": "https://www.grid.ac/institutes/grid.49470.3e", 
          "name": [
            "Ion Beam Physics Lab, Department of Physics, Wuhan University, Wuhan 430072, P.R. China, CN"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Fu", 
        "givenName": "D.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Wuhan University", 
          "id": "https://www.grid.ac/institutes/grid.49470.3e", 
          "name": [
            "Ion Beam Physics Lab, Department of Physics, Wuhan University, Wuhan 430072, P.R. China, CN"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Fan", 
        "givenName": "W.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Wuhan University", 
          "id": "https://www.grid.ac/institutes/grid.49470.3e", 
          "name": [
            "Ion Beam Physics Lab, Department of Physics, Wuhan University, Wuhan 430072, P.R. China, CN"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Guo", 
        "givenName": "H.", 
        "type": "Person"
      }
    ], 
    "datePublished": "1997-06", 
    "datePublishedReg": "1997-06-01", 
    "description": "and Ar ambient. X-ray diffraction indicated that growth of ZrN with a preferred (111) orientation over Si(100) was achieved. The resistivity of the films varies from 200 \u03bc\u03a9cm to 15 \u03bc\u03a9cm depending on the N2 content in the working gas. The square resistance of the films deposited on 96% Al2O3 ceramic wafers is stable below 300 \u00b0C.", 
    "genre": "non_research_article", 
    "id": "sg:pub.10.1007/s003390050522", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1022207", 
        "issn": [
          "0947-8396", 
          "1432-0630"
        ], 
        "name": "Applied Physics A", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "6", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "64"
      }
    ], 
    "name": "Structure, electrical and chemical properties of zirconium nitride films deposited by dc reactive magnetron sputtering", 
    "pagination": "593-595", 
    "productId": [
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "6118172ea1fa7cb1dacde8fdb29c3dfe749997a0a39dcb43ac384dc3acbaf19b"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1007/s003390050522"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1020377836"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1007/s003390050522", 
      "https://app.dimensions.ai/details/publication/pub.1020377836"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2019-04-10T15:43", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000001_0000000264/records_8664_00000481.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "http://link.springer.com/10.1007/s003390050522"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1007/s003390050522'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1007/s003390050522'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1007/s003390050522'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1007/s003390050522'


 

This table displays all metadata directly associated to this object as RDF triples.

84 TRIPLES      20 PREDICATES      27 URIs      19 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1007/s003390050522 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author N10821ea172804de394cc4899e6c01262
4 schema:datePublished 1997-06
5 schema:datePublishedReg 1997-06-01
6 schema:description and Ar ambient. X-ray diffraction indicated that growth of ZrN with a preferred (111) orientation over Si(100) was achieved. The resistivity of the films varies from 200 μΩcm to 15 μΩcm depending on the N2 content in the working gas. The square resistance of the films deposited on 96% Al2O3 ceramic wafers is stable below 300 °C.
7 schema:genre non_research_article
8 schema:inLanguage en
9 schema:isAccessibleForFree false
10 schema:isPartOf N9028ad804d1a497c998ce9b5c9c16b32
11 N9cfc4e5b3976455fb332bd2794f57cfd
12 sg:journal.1022207
13 schema:name Structure, electrical and chemical properties of zirconium nitride films deposited by dc reactive magnetron sputtering
14 schema:pagination 593-595
15 schema:productId N31d11c43b03749c2ba90b9f04f1fa91a
16 N5179e23b73bc4b53b2d35ecde6acf442
17 Nb05bc6a290a646b295e7a1883c04b4b8
18 schema:sameAs https://app.dimensions.ai/details/publication/pub.1020377836
19 https://doi.org/10.1007/s003390050522
20 schema:sdDatePublished 2019-04-10T15:43
21 schema:sdLicense https://scigraph.springernature.com/explorer/license/
22 schema:sdPublisher N9a510561203440ca8cbe8ac39143377e
23 schema:url http://link.springer.com/10.1007/s003390050522
24 sgo:license sg:explorer/license/
25 sgo:sdDataset articles
26 rdf:type schema:ScholarlyArticle
27 N10821ea172804de394cc4899e6c01262 rdf:first Nc000b4f675034d6c907400abad391a1c
28 rdf:rest N752114c6e1644a959c032092707f7372
29 N2fb9bcb6b24c4d76bab76dc121f20847 schema:affiliation https://www.grid.ac/institutes/grid.49470.3e
30 schema:familyName Zhang
31 schema:givenName Z.
32 rdf:type schema:Person
33 N31d11c43b03749c2ba90b9f04f1fa91a schema:name doi
34 schema:value 10.1007/s003390050522
35 rdf:type schema:PropertyValue
36 N5179e23b73bc4b53b2d35ecde6acf442 schema:name dimensions_id
37 schema:value pub.1020377836
38 rdf:type schema:PropertyValue
39 N5587cdfc6f144a2499a8b3936c032d20 schema:affiliation https://www.grid.ac/institutes/grid.49470.3e
40 schema:familyName Fan
41 schema:givenName W.
42 rdf:type schema:Person
43 N6c3f74632f004b4eb3f3bab3f6f64de4 rdf:first Nad7a5757926a408f9d0692b0bededae9
44 rdf:rest Ndf719cc027b9496b8314e2791db6e846
45 N752114c6e1644a959c032092707f7372 rdf:first N2fb9bcb6b24c4d76bab76dc121f20847
46 rdf:rest N6c3f74632f004b4eb3f3bab3f6f64de4
47 N8d83a337af4a4cb29b045e3c2eb671c0 schema:affiliation https://www.grid.ac/institutes/grid.49470.3e
48 schema:familyName Guo
49 schema:givenName H.
50 rdf:type schema:Person
51 N9028ad804d1a497c998ce9b5c9c16b32 schema:volumeNumber 64
52 rdf:type schema:PublicationVolume
53 N9a510561203440ca8cbe8ac39143377e schema:name Springer Nature - SN SciGraph project
54 rdf:type schema:Organization
55 N9cfc4e5b3976455fb332bd2794f57cfd schema:issueNumber 6
56 rdf:type schema:PublicationIssue
57 Nad7a5757926a408f9d0692b0bededae9 schema:affiliation https://www.grid.ac/institutes/grid.49470.3e
58 schema:familyName Fu
59 schema:givenName D.
60 rdf:type schema:Person
61 Nb05bc6a290a646b295e7a1883c04b4b8 schema:name readcube_id
62 schema:value 6118172ea1fa7cb1dacde8fdb29c3dfe749997a0a39dcb43ac384dc3acbaf19b
63 rdf:type schema:PropertyValue
64 Nc000b4f675034d6c907400abad391a1c schema:affiliation https://www.grid.ac/institutes/grid.49470.3e
65 schema:familyName Wu
66 schema:givenName D.
67 rdf:type schema:Person
68 Ndcf67aa28dd24ed7a9919166c618a0c0 rdf:first N8d83a337af4a4cb29b045e3c2eb671c0
69 rdf:rest rdf:nil
70 Ndf719cc027b9496b8314e2791db6e846 rdf:first N5587cdfc6f144a2499a8b3936c032d20
71 rdf:rest Ndcf67aa28dd24ed7a9919166c618a0c0
72 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
73 schema:name Engineering
74 rdf:type schema:DefinedTerm
75 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
76 schema:name Materials Engineering
77 rdf:type schema:DefinedTerm
78 sg:journal.1022207 schema:issn 0947-8396
79 1432-0630
80 schema:name Applied Physics A
81 rdf:type schema:Periodical
82 https://www.grid.ac/institutes/grid.49470.3e schema:alternateName Wuhan University
83 schema:name Ion Beam Physics Lab, Department of Physics, Wuhan University, Wuhan 430072, P.R. China, CN
84 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...