Ultrashort-pulse laser ablation of indium phosphide in air View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2001-01

AUTHORS

J. Bonse, J.M. Wrobel, J. Krüger, W. Kautek

ABSTRACT

Ablation of indium phosphide wafers in air was performed with low repetition rate ultrashort laser pulses (130 fs, 10 Hz) of 800 nm wavelength. The relationships between the dimensions of the craters and the ablation parameters were analyzed. The ablation threshold fluence depends on the number of pulses applied to the same spot. The single-pulse ablation threshold value was estimated to be φth(1)=0.16 J/cm2. The dependence of the threshold fluence on the number of laser pulses indicates an incubation effect. Morphological and chemical changes of the ablated regions were characterized by means of scanning electron microscopy and Auger electron spectroscopy. More... »

PAGES

89-94

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s003390000596

DOI

http://dx.doi.org/10.1007/s003390000596

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1004375490


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