Phenomena in silicon nanostructure devices View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2000-10

AUTHORS

R. Tsu

ABSTRACT

In nanostructures, whenever the electron mean-free-path exceeds the appropriate dimensions of the device structure, quantum natures may dictate the physical properties of devices. Among many important issues, some are selected in this work, whereas others, such as the reduction of dielectric constant, the increased binding energy of dopants, etc., are discussed briefly with references for further considerations. In the past several years, resonant tunneling via nanoscale silicon particles imbedded in an oxide matrix has shown striking similarity to the so-called soft breakdown (SBD), an important current subject in devices with ultrathin oxide gates. The relevance in applying results discussed here to SBD is discussed. A Si/O superlattice, a particular form of a new type of superlattice, semiconductor-atomic superlattice (SAS), is fully discussed. This Si/O superlattice can be used in silicon quantum and light-emitting devices. A diode structure with green electroluminescence has been life-tested for more than one year without degradation. High-resolution TEM shows defect density below 109/cm2. Preliminary calculation shows that the Si/O complexes result in a barrier height of 0.9 eV for silicon, sufficient for an epitaxially grown SOI, which is potentially far better than the SOI using buried oxide implantation followed by high temperature anneal. More... »

PAGES

391-402

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s003390000552

DOI

http://dx.doi.org/10.1007/s003390000552

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1006364566


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "University of North Carolina at Charlotte", 
          "id": "https://www.grid.ac/institutes/grid.266859.6", 
          "name": [
            "University of North Carolina at Charlotte, Charlotte NC 28223, USA (Fax: +1-704/547-2352, E-mail: tsu@uncc.edu), US"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Tsu", 
        "givenName": "R.", 
        "id": "sg:person.07670256546.73", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07670256546.73"
        ], 
        "type": "Person"
      }
    ], 
    "datePublished": "2000-10", 
    "datePublishedReg": "2000-10-01", 
    "description": "In nanostructures, whenever the electron mean-free-path exceeds the appropriate dimensions of the device structure, quantum natures may dictate the physical properties of devices. Among many important issues, some are selected in this work, whereas others, such as the reduction of dielectric constant, the increased binding energy of dopants, etc., are discussed briefly with references for further considerations. In the past several years, resonant tunneling via nanoscale silicon particles imbedded in an oxide matrix has shown striking similarity to the so-called soft breakdown (SBD), an important current subject in devices with ultrathin oxide gates. The relevance in applying results discussed here to SBD is discussed. A Si/O superlattice, a particular form of a new type of superlattice, semiconductor-atomic superlattice (SAS), is fully discussed. This Si/O superlattice can be used in silicon quantum and light-emitting devices. A diode structure with green electroluminescence has been life-tested for more than one year without degradation. High-resolution TEM shows defect density below 109/cm2. Preliminary calculation shows that the Si/O complexes result in a barrier height of 0.9 eV for silicon, sufficient for an epitaxially grown SOI, which is potentially far better than the SOI using buried oxide implantation followed by high temperature anneal.", 
    "genre": "research_article", 
    "id": "sg:pub.10.1007/s003390000552", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1022207", 
        "issn": [
          "0947-8396", 
          "1432-0630"
        ], 
        "name": "Applied Physics A", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "4", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "71"
      }
    ], 
    "name": "Phenomena in silicon nanostructure devices", 
    "pagination": "391-402", 
    "productId": [
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "1e5110a3c700403469e96c9c84e1c66a233b3e922e52ed2907732e0e672aa03a"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1007/s003390000552"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1006364566"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1007/s003390000552", 
      "https://app.dimensions.ai/details/publication/pub.1006364566"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2019-04-10T23:18", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000001_0000000264/records_8693_00000486.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "http://link.springer.com/10.1007/s003390000552"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1007/s003390000552'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1007/s003390000552'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1007/s003390000552'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1007/s003390000552'


 

This table displays all metadata directly associated to this object as RDF triples.

61 TRIPLES      20 PREDICATES      27 URIs      19 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1007/s003390000552 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author Nad60dce2bd1b4dd98a7cd9f51dbdd77e
4 schema:datePublished 2000-10
5 schema:datePublishedReg 2000-10-01
6 schema:description In nanostructures, whenever the electron mean-free-path exceeds the appropriate dimensions of the device structure, quantum natures may dictate the physical properties of devices. Among many important issues, some are selected in this work, whereas others, such as the reduction of dielectric constant, the increased binding energy of dopants, etc., are discussed briefly with references for further considerations. In the past several years, resonant tunneling via nanoscale silicon particles imbedded in an oxide matrix has shown striking similarity to the so-called soft breakdown (SBD), an important current subject in devices with ultrathin oxide gates. The relevance in applying results discussed here to SBD is discussed. A Si/O superlattice, a particular form of a new type of superlattice, semiconductor-atomic superlattice (SAS), is fully discussed. This Si/O superlattice can be used in silicon quantum and light-emitting devices. A diode structure with green electroluminescence has been life-tested for more than one year without degradation. High-resolution TEM shows defect density below 109/cm2. Preliminary calculation shows that the Si/O complexes result in a barrier height of 0.9 eV for silicon, sufficient for an epitaxially grown SOI, which is potentially far better than the SOI using buried oxide implantation followed by high temperature anneal.
7 schema:genre research_article
8 schema:inLanguage en
9 schema:isAccessibleForFree false
10 schema:isPartOf N650b99514c994e408c1b0d5a77807abe
11 Na04b190885fe48d98b3f73ffbf667ec7
12 sg:journal.1022207
13 schema:name Phenomena in silicon nanostructure devices
14 schema:pagination 391-402
15 schema:productId N4132e83e03d74f7ba8338c6b57373c0e
16 N70e728b902df41cd9d1a7d603a57b5a2
17 N71fba26be58c4df29422bcdd246e14c6
18 schema:sameAs https://app.dimensions.ai/details/publication/pub.1006364566
19 https://doi.org/10.1007/s003390000552
20 schema:sdDatePublished 2019-04-10T23:18
21 schema:sdLicense https://scigraph.springernature.com/explorer/license/
22 schema:sdPublisher Nc4245e50a7c7413da902f5eec48205de
23 schema:url http://link.springer.com/10.1007/s003390000552
24 sgo:license sg:explorer/license/
25 sgo:sdDataset articles
26 rdf:type schema:ScholarlyArticle
27 N4132e83e03d74f7ba8338c6b57373c0e schema:name doi
28 schema:value 10.1007/s003390000552
29 rdf:type schema:PropertyValue
30 N650b99514c994e408c1b0d5a77807abe schema:volumeNumber 71
31 rdf:type schema:PublicationVolume
32 N70e728b902df41cd9d1a7d603a57b5a2 schema:name readcube_id
33 schema:value 1e5110a3c700403469e96c9c84e1c66a233b3e922e52ed2907732e0e672aa03a
34 rdf:type schema:PropertyValue
35 N71fba26be58c4df29422bcdd246e14c6 schema:name dimensions_id
36 schema:value pub.1006364566
37 rdf:type schema:PropertyValue
38 Na04b190885fe48d98b3f73ffbf667ec7 schema:issueNumber 4
39 rdf:type schema:PublicationIssue
40 Nad60dce2bd1b4dd98a7cd9f51dbdd77e rdf:first sg:person.07670256546.73
41 rdf:rest rdf:nil
42 Nc4245e50a7c7413da902f5eec48205de schema:name Springer Nature - SN SciGraph project
43 rdf:type schema:Organization
44 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
45 schema:name Engineering
46 rdf:type schema:DefinedTerm
47 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
48 schema:name Materials Engineering
49 rdf:type schema:DefinedTerm
50 sg:journal.1022207 schema:issn 0947-8396
51 1432-0630
52 schema:name Applied Physics A
53 rdf:type schema:Periodical
54 sg:person.07670256546.73 schema:affiliation https://www.grid.ac/institutes/grid.266859.6
55 schema:familyName Tsu
56 schema:givenName R.
57 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07670256546.73
58 rdf:type schema:Person
59 https://www.grid.ac/institutes/grid.266859.6 schema:alternateName University of North Carolina at Charlotte
60 schema:name University of North Carolina at Charlotte, Charlotte NC 28223, USA (Fax: +1-704/547-2352, E-mail: tsu@uncc.edu), US
61 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...