Phenomena in silicon nanostructure devices View Full Text


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Article Info

DATE

2000-10

AUTHORS

R. Tsu

ABSTRACT

In nanostructures, whenever the electron mean-free-path exceeds the appropriate dimensions of the device structure, quantum natures may dictate the physical properties of devices. Among many important issues, some are selected in this work, whereas others, such as the reduction of dielectric constant, the increased binding energy of dopants, etc., are discussed briefly with references for further considerations. In the past several years, resonant tunneling via nanoscale silicon particles imbedded in an oxide matrix has shown striking similarity to the so-called soft breakdown (SBD), an important current subject in devices with ultrathin oxide gates. The relevance in applying results discussed here to SBD is discussed. A Si/O superlattice, a particular form of a new type of superlattice, semiconductor-atomic superlattice (SAS), is fully discussed. This Si/O superlattice can be used in silicon quantum and light-emitting devices. A diode structure with green electroluminescence has been life-tested for more than one year without degradation. High-resolution TEM shows defect density below 109/cm2. Preliminary calculation shows that the Si/O complexes result in a barrier height of 0.9 eV for silicon, sufficient for an epitaxially grown SOI, which is potentially far better than the SOI using buried oxide implantation followed by high temperature anneal. More... »

PAGES

391-402

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s003390000552

DOI

http://dx.doi.org/10.1007/s003390000552

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1006364566


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