Fabrication of diamond microstub photoemitters with strong photoluminescence of SiV color centers: bottom-up approach View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2015-01

AUTHORS

D. Sovyk, V. Ralchenko, M. Komlenok, A. A. Khomich, V. Shershulin, V. Vorobyov, I. Vlasov, V. Konov, A. Akimov

ABSTRACT

Arrays of diamond photoemitters with silicon-vacancy (SiV) photoluminescent (PL) centers have been produced by epitaxy of CVD diamond inside laser-ablated channels in a-Si mask on single crystal or polycrystalline diamond substrates, the mask also serving as Si-doping source. Strong PL emission from the SiV centers with zero-phonon line at 738.6 nm wavelength (6 nm width, 0.8 ns decay time), localized within the photoemitters, has been measured. More... »

PAGES

17-21

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s00339-014-8877-2

DOI

http://dx.doi.org/10.1007/s00339-014-8877-2

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1015442899


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