Effects of contact resistance on the evaluation of charge carrier mobilities and transport parameters in amorphous zinc tin oxide thin-film ... View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2014-04-23

AUTHORS

Leander Schulz, Eui-Jung Yun, Ananth Dodabalapur

ABSTRACT

Accurate determination of the charge transport characteristics of amorphous metal-oxide transistors requires the mitigation of the effects of contact resistance. The use of additional electrodes as voltage probes can overcome contact resistance-related limitations and yields accurate charge carrier mobility values, trap depths and temperature and carrier density dependencies of mobility as well as trap depths. We show that large differences in measured charge carrier mobility values are obtained when such contact resistances are not factored out. Upon exclusion of the contact resistance, the true temperature dependence of charge carrier mobility appears in the form of two clearly distinct mobility regimes. Analyzing these revealed mobility regions leads to a more accurate determination of the underlying transport physics, which shows that contact resistance-related artefacts yield incorrect trends of trap depth with gate voltage, potentially leading to a misconstruction of the charge transport picture. Furthermore, a comparison of low- and high-mobility samples indicates that the observed effects are more general. More... »

PAGES

1103-1107

Identifiers

URI

http://scigraph.springernature.com/pub.10.1007/s00339-014-8422-3

DOI

http://dx.doi.org/10.1007/s00339-014-8422-3

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1049565438


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "School of Physical Science and Technology, Sichuan University, 610064, Chengdu, Sichuan, China", 
          "id": "http://www.grid.ac/institutes/grid.13291.38", 
          "name": [
            "Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78758, USA", 
            "School of Physical Science and Technology, Sichuan University, 610064, Chengdu, Sichuan, China"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Schulz", 
        "givenName": "Leander", 
        "id": "sg:person.01243655221.64", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01243655221.64"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "College of IT Engineering and Department of System Control Engineering, Hoseo University, 336-795, Asan, Choongnam, South Korea", 
          "id": "http://www.grid.ac/institutes/grid.412238.e", 
          "name": [
            "Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78758, USA", 
            "College of IT Engineering and Department of System Control Engineering, Hoseo University, 336-795, Asan, Choongnam, South Korea"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Yun", 
        "givenName": "Eui-Jung", 
        "id": "sg:person.013341701663.32", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013341701663.32"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78758, USA", 
          "id": "http://www.grid.ac/institutes/grid.89336.37", 
          "name": [
            "Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78758, USA"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Dodabalapur", 
        "givenName": "Ananth", 
        "id": "sg:person.0632764457.49", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0632764457.49"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1038/nmat2560", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1017244326", 
          "https://doi.org/10.1038/nmat2560"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1557/jmr.2012.134", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1001439981", 
          "https://doi.org/10.1557/jmr.2012.134"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/nature11434", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1029347259", 
          "https://doi.org/10.1038/nature11434"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2014-04-23", 
    "datePublishedReg": "2014-04-23", 
    "description": "Accurate determination of the charge transport characteristics of amorphous metal-oxide transistors requires the mitigation of the effects of contact resistance. The use of additional electrodes as voltage probes can overcome contact resistance-related limitations and yields accurate charge carrier mobility values, trap depths and temperature and carrier density dependencies of mobility as well as trap depths. We show that large differences in measured charge carrier mobility values are obtained when such contact resistances are not factored out. Upon exclusion of the contact resistance, the true temperature dependence of charge carrier mobility appears in the form of two clearly distinct mobility regimes. Analyzing these revealed mobility regions leads to a more accurate determination of the underlying transport physics, which shows that contact resistance-related artefacts yield incorrect trends of trap depth with gate voltage, potentially leading to a misconstruction of the charge transport picture. Furthermore, a comparison of low- and high-mobility samples indicates that the observed effects are more general.", 
    "genre": "article", 
    "id": "sg:pub.10.1007/s00339-014-8422-3", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isFundedItemOf": [
      {
        "id": "sg:grant.5228382", 
        "type": "MonetaryGrant"
      }, 
      {
        "id": "sg:grant.5214127", 
        "type": "MonetaryGrant"
      }
    ], 
    "isPartOf": [
      {
        "id": "sg:journal.1022207", 
        "issn": [
          "0947-8396", 
          "1432-0630"
        ], 
        "name": "Applied Physics A", 
        "publisher": "Springer Nature", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "4", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "115"
      }
    ], 
    "keywords": [
      "contact resistance", 
      "carrier mobility values", 
      "charge carrier mobility values", 
      "charge carrier mobility", 
      "amorphous zinc tin oxide thin-film transistors", 
      "zinc tin oxide thin-film transistors", 
      "tin oxide thin film transistors", 
      "carrier mobility", 
      "oxide thin-film transistors", 
      "metal oxide transistors", 
      "thin-film transistors", 
      "mobility values", 
      "charge transport characteristics", 
      "trap depth", 
      "true temperature dependence", 
      "voltage probe", 
      "transport physics", 
      "transport parameters", 
      "gate voltage", 
      "transport characteristics", 
      "incorrect trends", 
      "transistors", 
      "additional electrodes", 
      "transport picture", 
      "accurate determination", 
      "high mobility samples", 
      "density dependencies", 
      "temperature dependence", 
      "voltage", 
      "depth", 
      "mobility region", 
      "resistance", 
      "electrode", 
      "temperature", 
      "mobility", 
      "mitigation", 
      "parameters", 
      "large differences", 
      "effect", 
      "values", 
      "characteristics", 
      "determination", 
      "regime", 
      "dependence", 
      "physics", 
      "dependency", 
      "observed effects", 
      "comparison", 
      "limitations", 
      "probe", 
      "mobility regimes", 
      "use", 
      "artifacts", 
      "samples", 
      "region", 
      "evaluation", 
      "trends", 
      "form", 
      "differences", 
      "picture", 
      "exclusion", 
      "misconstruction"
    ], 
    "name": "Effects of contact resistance on the evaluation of charge carrier mobilities and transport parameters in amorphous zinc tin oxide thin-film transistors", 
    "pagination": "1103-1107", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1049565438"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1007/s00339-014-8422-3"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1007/s00339-014-8422-3", 
      "https://app.dimensions.ai/details/publication/pub.1049565438"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-06-01T22:12", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220601/entities/gbq_results/article/article_639.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1007/s00339-014-8422-3"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1007/s00339-014-8422-3'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1007/s00339-014-8422-3'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1007/s00339-014-8422-3'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1007/s00339-014-8422-3'


 

This table displays all metadata directly associated to this object as RDF triples.

158 TRIPLES      22 PREDICATES      90 URIs      79 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1007/s00339-014-8422-3 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author N17d9926dfb0e4a02bf00319794a23f07
4 schema:citation sg:pub.10.1038/nature11434
5 sg:pub.10.1038/nmat2560
6 sg:pub.10.1557/jmr.2012.134
7 schema:datePublished 2014-04-23
8 schema:datePublishedReg 2014-04-23
9 schema:description Accurate determination of the charge transport characteristics of amorphous metal-oxide transistors requires the mitigation of the effects of contact resistance. The use of additional electrodes as voltage probes can overcome contact resistance-related limitations and yields accurate charge carrier mobility values, trap depths and temperature and carrier density dependencies of mobility as well as trap depths. We show that large differences in measured charge carrier mobility values are obtained when such contact resistances are not factored out. Upon exclusion of the contact resistance, the true temperature dependence of charge carrier mobility appears in the form of two clearly distinct mobility regimes. Analyzing these revealed mobility regions leads to a more accurate determination of the underlying transport physics, which shows that contact resistance-related artefacts yield incorrect trends of trap depth with gate voltage, potentially leading to a misconstruction of the charge transport picture. Furthermore, a comparison of low- and high-mobility samples indicates that the observed effects are more general.
10 schema:genre article
11 schema:inLanguage en
12 schema:isAccessibleForFree false
13 schema:isPartOf N58f6fba4868f4f4c92e94e29e81ca993
14 Nffef10bf24084d4eb3fb8d3f174e8239
15 sg:journal.1022207
16 schema:keywords accurate determination
17 additional electrodes
18 amorphous zinc tin oxide thin-film transistors
19 artifacts
20 carrier mobility
21 carrier mobility values
22 characteristics
23 charge carrier mobility
24 charge carrier mobility values
25 charge transport characteristics
26 comparison
27 contact resistance
28 density dependencies
29 dependence
30 dependency
31 depth
32 determination
33 differences
34 effect
35 electrode
36 evaluation
37 exclusion
38 form
39 gate voltage
40 high mobility samples
41 incorrect trends
42 large differences
43 limitations
44 metal oxide transistors
45 misconstruction
46 mitigation
47 mobility
48 mobility regimes
49 mobility region
50 mobility values
51 observed effects
52 oxide thin-film transistors
53 parameters
54 physics
55 picture
56 probe
57 regime
58 region
59 resistance
60 samples
61 temperature
62 temperature dependence
63 thin-film transistors
64 tin oxide thin film transistors
65 transistors
66 transport characteristics
67 transport parameters
68 transport physics
69 transport picture
70 trap depth
71 trends
72 true temperature dependence
73 use
74 values
75 voltage
76 voltage probe
77 zinc tin oxide thin-film transistors
78 schema:name Effects of contact resistance on the evaluation of charge carrier mobilities and transport parameters in amorphous zinc tin oxide thin-film transistors
79 schema:pagination 1103-1107
80 schema:productId N81a5e630e7ed472990395b2b4221229f
81 Nbbbecb3d771c4f75a99d332747a718d9
82 schema:sameAs https://app.dimensions.ai/details/publication/pub.1049565438
83 https://doi.org/10.1007/s00339-014-8422-3
84 schema:sdDatePublished 2022-06-01T22:12
85 schema:sdLicense https://scigraph.springernature.com/explorer/license/
86 schema:sdPublisher N16e486c3324d42a9b7312e091a94a23a
87 schema:url https://doi.org/10.1007/s00339-014-8422-3
88 sgo:license sg:explorer/license/
89 sgo:sdDataset articles
90 rdf:type schema:ScholarlyArticle
91 N16e486c3324d42a9b7312e091a94a23a schema:name Springer Nature - SN SciGraph project
92 rdf:type schema:Organization
93 N17d9926dfb0e4a02bf00319794a23f07 rdf:first sg:person.01243655221.64
94 rdf:rest N65073fc9b9124829a1bf2c4f81cae8bd
95 N58f6fba4868f4f4c92e94e29e81ca993 schema:issueNumber 4
96 rdf:type schema:PublicationIssue
97 N65073fc9b9124829a1bf2c4f81cae8bd rdf:first sg:person.013341701663.32
98 rdf:rest N914613ba15ab40859903cab4265f4faa
99 N81a5e630e7ed472990395b2b4221229f schema:name doi
100 schema:value 10.1007/s00339-014-8422-3
101 rdf:type schema:PropertyValue
102 N914613ba15ab40859903cab4265f4faa rdf:first sg:person.0632764457.49
103 rdf:rest rdf:nil
104 Nbbbecb3d771c4f75a99d332747a718d9 schema:name dimensions_id
105 schema:value pub.1049565438
106 rdf:type schema:PropertyValue
107 Nffef10bf24084d4eb3fb8d3f174e8239 schema:volumeNumber 115
108 rdf:type schema:PublicationVolume
109 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
110 schema:name Engineering
111 rdf:type schema:DefinedTerm
112 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
113 schema:name Materials Engineering
114 rdf:type schema:DefinedTerm
115 sg:grant.5214127 http://pending.schema.org/fundedItem sg:pub.10.1007/s00339-014-8422-3
116 rdf:type schema:MonetaryGrant
117 sg:grant.5228382 http://pending.schema.org/fundedItem sg:pub.10.1007/s00339-014-8422-3
118 rdf:type schema:MonetaryGrant
119 sg:journal.1022207 schema:issn 0947-8396
120 1432-0630
121 schema:name Applied Physics A
122 schema:publisher Springer Nature
123 rdf:type schema:Periodical
124 sg:person.01243655221.64 schema:affiliation grid-institutes:grid.13291.38
125 schema:familyName Schulz
126 schema:givenName Leander
127 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01243655221.64
128 rdf:type schema:Person
129 sg:person.013341701663.32 schema:affiliation grid-institutes:grid.412238.e
130 schema:familyName Yun
131 schema:givenName Eui-Jung
132 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013341701663.32
133 rdf:type schema:Person
134 sg:person.0632764457.49 schema:affiliation grid-institutes:grid.89336.37
135 schema:familyName Dodabalapur
136 schema:givenName Ananth
137 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0632764457.49
138 rdf:type schema:Person
139 sg:pub.10.1038/nature11434 schema:sameAs https://app.dimensions.ai/details/publication/pub.1029347259
140 https://doi.org/10.1038/nature11434
141 rdf:type schema:CreativeWork
142 sg:pub.10.1038/nmat2560 schema:sameAs https://app.dimensions.ai/details/publication/pub.1017244326
143 https://doi.org/10.1038/nmat2560
144 rdf:type schema:CreativeWork
145 sg:pub.10.1557/jmr.2012.134 schema:sameAs https://app.dimensions.ai/details/publication/pub.1001439981
146 https://doi.org/10.1557/jmr.2012.134
147 rdf:type schema:CreativeWork
148 grid-institutes:grid.13291.38 schema:alternateName School of Physical Science and Technology, Sichuan University, 610064, Chengdu, Sichuan, China
149 schema:name Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78758, USA
150 School of Physical Science and Technology, Sichuan University, 610064, Chengdu, Sichuan, China
151 rdf:type schema:Organization
152 grid-institutes:grid.412238.e schema:alternateName College of IT Engineering and Department of System Control Engineering, Hoseo University, 336-795, Asan, Choongnam, South Korea
153 schema:name College of IT Engineering and Department of System Control Engineering, Hoseo University, 336-795, Asan, Choongnam, South Korea
154 Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78758, USA
155 rdf:type schema:Organization
156 grid-institutes:grid.89336.37 schema:alternateName Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78758, USA
157 schema:name Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78758, USA
158 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...